Reactive sputter deposition of alumina thin films using a hollow cathode sputtering source

AbstractThe fabrication of high-resistivity ZnO-based thin films lattice-matched to AlGaN/GaN structures has been developed. It relies on low-temperature reactive sputter deposition of ZnO:Sb from ZnSb target. Taking into account the hygroscopic nature of ZnO surface, an additional coating by Si3N4 films is applied to ensure the humidity protecition. The developped passivation suppresses leakage currents in Schottky diods, and substantially improves output characteristics of AlGaN/GaN HEMT.

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Polycrystalline GeC Thin Films Deposited Using a Unique Hollow Cathode Sputtering Technique

MRS Proceedings ◽

10.1557/proc-862-a20.2 ◽

2005 ◽

Vol 862 ◽

Cited By ~ 5

Author(s):

R. J. Soukup ◽

N. J. Ianno ◽

J. S. Schrader ◽

V. L. Dalal

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Hollow Cathode ◽

Growth Conditions ◽

Group Iv ◽

Native Oxide ◽

Cathode Sputtering ◽

Si Substrates ◽

New Material ◽

Equilibrium Growth

AbstractExperimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented. The mostimportant contribution of this work is that it shows that by using non-equilibrium growth conditions resulting from the hollow cathode technique, one can grow Group IV materials which cannot otherwise be grown using normal CVD or MBE processes. The sputtering is accomplished by igniting a dc plasma in the Ar and H2 gases which are fed through Ge and C nozzles.The GeC films are grown on etched Si (100), on Si with the native oxide and on glass. The films grown on glass were quite disordered, but the films grown on both types of Si substrates were very ordered in nature. This order has been characterized using Xray diffraction (XRD) and Raman spectroscopy.Films with as much as 8% C have been deposited. In order to produce useful GexC1-x films, the C must bond to the Ge at lattice sites. Evidence of this desired GeC bond has been seen using Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and XRD.

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Reactive Sputter Deposition of Lithium Phosphorus Oxynitride Thin Films

ECS Meeting Abstracts ◽

10.1149/ma2009-01/3/153 ◽

2009 ◽

Keyword(s):

Thin Films ◽

Sputter Deposition ◽

Reactive Sputter Deposition ◽

Lithium Phosphorus Oxynitride

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Reactive sputter deposition of crystalline Cr/C/F thin films

Materials Letters ◽

10.1016/0167-577x(94)90003-5 ◽

1994 ◽

Vol 18 (5-6) ◽

pp. 251-256 ◽

Cited By ~ 3

Author(s):

M.J. O'Keefe ◽

J.M. Rigsbee

Keyword(s):

Thin Films ◽

Sputter Deposition ◽

Reactive Sputter Deposition

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Reactive sputter deposition of tungsten nitride thin films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1498278 ◽

2002 ◽

Vol 20 (5) ◽

pp. 1699-1703 ◽

Cited By ~ 34

Author(s):

Colin C. Baker ◽

S. Ismat Shah

Keyword(s):

Thin Films ◽

Sputter Deposition ◽

Tungsten Nitride ◽

Reactive Sputter Deposition

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Reactive sputter deposition and properties of TaxN thin films

Microelectronic Engineering ◽

10.1016/s0167-9317(02)00801-8 ◽

2002 ◽

Vol 64 (1-4) ◽

pp. 289-297 ◽

Cited By ~ 114

Author(s):

T Riekkinen ◽

J Molarius ◽

T Laurila ◽

A Nurmela ◽

I Suni ◽

...

Keyword(s):

Thin Films ◽

Sputter Deposition ◽

Reactive Sputter Deposition

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Effect of Electroless Copper on the Growth of ZnO Nanowires

Journal of Materials Research ◽

10.1557/jmr.2005.0286 ◽

2005 ◽

Vol 20 (9) ◽

pp. 2348-2353 ◽

Cited By ~ 6

Author(s):

Wen-Ting Chiou ◽

Wan-Yu Wu ◽

Jyh-Ming Ting

Keyword(s):

Thin Films ◽

Deposition Time ◽

Average Length ◽

Average Diameter ◽

Sputter Deposition ◽

Zno Nanowires ◽

Zno Thin Films ◽

Silicon Substrates ◽

Reactive Sputter Deposition ◽

Electroless Copper

ZnO nanowires along with ZnO thin films were obtained on copper-metallized silicon substrates using an radio frequency-reactive sputter-deposition technique. Residual tensile stresses were found in both the copper layer and the ZnO layer. The ZnO nanowires were observed exclusively at the grain boundaries of the ZnO thin films. The average diameter of ZnO nanowires varies only slightly with the ZnO deposition time, while the average length increases linearly with the ZnO deposition time. Based on the observations a growth model involving stress-assisted diffusion of copper and reaction-controlled catalytic growth of ZnO nanowires is suggested.

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