Effect of Electroless Copper on the Growth of ZnO Nanowires

2005 ◽  
Vol 20 (9) ◽  
pp. 2348-2353 ◽  
Author(s):  
Wen-Ting Chiou ◽  
Wan-Yu Wu ◽  
Jyh-Ming Ting

ZnO nanowires along with ZnO thin films were obtained on copper-metallized silicon substrates using an radio frequency-reactive sputter-deposition technique. Residual tensile stresses were found in both the copper layer and the ZnO layer. The ZnO nanowires were observed exclusively at the grain boundaries of the ZnO thin films. The average diameter of ZnO nanowires varies only slightly with the ZnO deposition time, while the average length increases linearly with the ZnO deposition time. Based on the observations a growth model involving stress-assisted diffusion of copper and reaction-controlled catalytic growth of ZnO nanowires is suggested.

2009 ◽  
Vol 24 (10) ◽  
pp. 105003 ◽  
Author(s):  
Hyung-Kyu Choi ◽  
Jang-Ho Park ◽  
Sang-Hun Jeong ◽  
Byung-Teak Lee

2007 ◽  
Vol 1035 ◽  
Author(s):  
Eliana Kaminska ◽  
Anna Piotrowska ◽  
Marie-Antoinette di Forte Poisson ◽  
Sylvain Delage ◽  
Hacene Lahreche ◽  
...  

AbstractThe fabrication of high-resistivity ZnO-based thin films lattice-matched to AlGaN/GaN structures has been developed. It relies on low-temperature reactive sputter deposition of ZnO:Sb from ZnSb target. Taking into account the hygroscopic nature of ZnO surface, an additional coating by Si3N4 films is applied to ensure the humidity protecition. The developped passivation suppresses leakage currents in Schottky diods, and substantially improves output characteristics of AlGaN/GaN HEMT.


1994 ◽  
Vol 18 (5-6) ◽  
pp. 251-256 ◽  
Author(s):  
M.J. O'Keefe ◽  
J.M. Rigsbee

2002 ◽  
Vol 64 (1-4) ◽  
pp. 289-297 ◽  
Author(s):  
T Riekkinen ◽  
J Molarius ◽  
T Laurila ◽  
A Nurmela ◽  
I Suni ◽  
...  

2011 ◽  
Vol 312-315 ◽  
pp. 1132-1136 ◽  
Author(s):  
Mohamad Hafiz Mamat ◽  
Zuraida Khusaimi ◽  
Mohamad Mahmood Rusop

Nanostructured zinc oxide (ZnO) thin films were prepared through sol-gel method and spin-coating technique. ZnO thin films then were annealed at temperature of 350°C, 400°C, 450°C and 500°C. The thin films were characterized using field emission scanning electron microscope (FESEM), UV-VIS-NIR spectrophotometer and photoluminescence (PL) spectrofluorometer for morphology and optical properties study. The morphology study indicates that the particle size of ZnO increased with annealing temperatures. All thin films are optically transparent (~ 80 % in transmittance) in the visible light-NIR region. PL spectra reveal improved UV emission with annealing temperatures up to 500°C.


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