A Novel Field-Enhanced-Nanowire Poly-Si Thin-Film Transistor
Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory with Gate-All-Around
Structure Has Been Proposed to Achieve a Higher Program and Erase
Efficiency
Keyword(s):
2005 ◽
Vol 23
(5)
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pp. 2184
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Keyword(s):
Keyword(s):
2011 ◽
Vol 50
(6)
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pp. 06GF12
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Keyword(s):
Keyword(s):
2013 ◽
Vol 60
(7)
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pp. 2251-2255
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Keyword(s):
2011 ◽
Vol 50
(6S)
◽
pp. 06GF12
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Keyword(s):
1998 ◽
Vol 37
(Part 1, No. 3B)
◽
pp. 1064-1066
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