A Novel Field-Enhanced-Nanowire Poly-Si Thin-Film Transistor Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory with Gate-All-Around Structure Has Been Proposed to Achieve a Higher Program and Erase Efficiency

2013 ◽  
Vol 60 (7) ◽  
pp. 2251-2255 ◽  
Author(s):  
Tung-Ming Pan ◽  
Li-Chen Yen ◽  
Sheng-Hao Huang ◽  
Chieh-Ting Lo ◽  
Tien-Sheng Chao

2013 ◽  
Vol 2 (10) ◽  
pp. P83-P85 ◽  
Author(s):  
T.-M. Pan ◽  
L.-C. Yen ◽  
S. Mondal ◽  
C.-T. Lo ◽  
T.-S. Chao

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1064-1066 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Cheol-Min Park ◽  
Juhn-Suk Yoo ◽  
Cheon-Hong Kim ◽  
Min-Koo Han

Sign in / Sign up

Export Citation Format

Share Document