scholarly journals In Situ Deposited HfO2 with a-Si Passivation as a Potential Gate Stack for High Mobility (In)GaSb- Based p-MOSFETs

Keyword(s):  
2019 ◽  
Vol 41 (3) ◽  
pp. 223-230 ◽  
Author(s):  
Padmaja Nagaiah ◽  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
...  

2018 ◽  
Vol 26 (7) ◽  
pp. 891-899
Author(s):  
Kai Wang ◽  
Yun-Hou Yin ◽  
Zhan-Qing Yang ◽  
Hai-Fan Yu ◽  
Yu-Si Wang ◽  
...  

Uterine decidualization is crucial for placenta formation and pregnancy maintenance. Although previous studies have reported that high mobility group box 3 (Hmgb3) is involved in the regulation of cellular proliferation and differentiation, little is known regarding its physiological role in uterine decidualization. Here, in situ hybridization result exhibited a dynamic expression pattern of Hmgb3 messenger RNA (mRNA) during early gestation, and it was mainly localized to the decidua on days 6 to 8 of gestation. Consistently, elevated Hmgb3 expression was noted in the decidualizing stromal cells after intraluminal oil infusion. In uterine luminal epithelium of ovariectomized mice, estrogen induced the accumulation of Hmgb3 mRNA, which was dependent on the existence of implanting blastocyst. Simultaneously, Hmgb3 could stimulate the proliferation of uterine stromal cells and promote the expression of Prl8a2, a reliable marker for stromal cell differentiation. Further analysis evidenced that Hmgb3 might modulate the expression of pleiotropin (Ptn) in uterine stromal cells. Moreover, silencing of Ptn could impede the upregulation of Prl8a2 elicited by Hmgb3 overexpression, while overexpression of Ptn reversed the repressive effects of Hmgb3 siRNA on Prl8a2 expression. Collectively, Hmgb3 may direct uterine decidualization through targeting Ptn.


2019 ◽  
Vol 367 ◽  
pp. 427-436 ◽  
Author(s):  
Mingyi Ren ◽  
Shiming Ding ◽  
Zhen Fu ◽  
Liyuan Yang ◽  
Wanying Tang ◽  
...  

2019 ◽  
Vol 53 (9) ◽  
pp. 4755-4764 ◽  
Author(s):  
Xianfang Fan ◽  
Shiming Ding ◽  
Musong Chen ◽  
Shuaishuai Gao ◽  
Zhen Fu ◽  
...  
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2019 ◽  
Vol 66 (4) ◽  
pp. 1710-1716 ◽  
Author(s):  
J. Urresti ◽  
F. Arith ◽  
S. Olsen ◽  
N. Wright ◽  
A. O'Neill

2012 ◽  
Vol 187 ◽  
pp. 23-26 ◽  
Author(s):  
Sonja Sioncke ◽  
Claudia Fleischmann ◽  
Dennis Lin ◽  
Evi Vrancken ◽  
Matty Caymax ◽  
...  

The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH4)2S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserved and an adequate passivation is found for pMOS operation.


2013 ◽  
Vol 58 (6) ◽  
pp. 275-280 ◽  
Author(s):  
J. Park ◽  
J. G. Cruz ◽  
B. Zheng ◽  
J. Gelatos ◽  
M. Narasimhan ◽  
...  

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