The Impact of Active Layer Pre-Treatment on Bias Stress Stability of Sol-gel Derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2011-02/31/2113 ◽

2011 ◽

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Sol Gel ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Pre Treatment ◽

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The Impact of Active Layer Pre-Treatment on Bias Stress Stability of Sol-Gel Derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor

ECS Transactions ◽

10.1149/1.3629976 ◽

2019 ◽

Vol 41 (6) ◽

pp. 273-281 ◽

Author(s):

Wan-Fang Chung ◽

Ting-Chang Chang ◽

Hung-Wei Li ◽

Yu-Chun Chen ◽

Iue-Hen Li ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Sol Gel ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Pre Treatment ◽

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Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

Applied Physics Letters ◽

10.1063/1.4902867 ◽

2014 ◽

Vol 105 (21) ◽

pp. 213505 ◽

Author(s):

Kwang-Won Jo ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Microwave Irradiation ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO2bilayer passivation under gate bias stress

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.02bc17 ◽

2016 ◽

Vol 55 (2S) ◽

pp. 02BC17 ◽

Author(s):

Ching-Lin Fan ◽

Fan-Ping Tseng ◽

Bo-Jyun Li ◽

Yu-Zuo Lin ◽

Shea-Jue Wang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Gate Bias Stress

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High-performance amorphous indium gallium zinc oxide thin-film transistors with sol-gel processed gate dielectric and channel layer fabricated using microwave irradiation

Current Applied Physics ◽

10.1016/j.cap.2018.06.003 ◽

2018 ◽

Vol 18 (9) ◽

pp. 1080-1086 ◽

Author(s):

Min-Soo Kang ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Gate Dielectric ◽

Sol Gel ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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H2O-Assisted O2 Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

Electrochemical and Solid-State Letters ◽

10.1149/1.3568831 ◽

2011 ◽

Vol 14 (6) ◽

pp. H235 ◽

Author(s):

Wan-Fang Chung ◽

Ting-Chang Chang ◽

Hung-Wei Li ◽

Shih-Ching Chen ◽

Yu-Chun Chen ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Sol Gel ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

O2 Adsorption ◽

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Effects of electron trapping and interface state generation on bias stress induced in indium–gallium–zinc oxide thin-film transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.08ng04 ◽

2014 ◽

Vol 53 (8S3) ◽

pp. 08NG04 ◽

Author(s):

Chang-Hoon Han ◽

Sang-Sub Kim ◽

Kwang-Ryul Kim ◽

Do-Hyun Baek ◽

Sang-Soo Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Interface State ◽

Oxide Thin Film ◽

Electron Trapping ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

State Generation ◽

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Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors

Applied Physics Letters ◽

10.1063/1.3580614 ◽

2011 ◽

Vol 98 (15) ◽

pp. 152109 ◽

Author(s):

Wan-Fang Chung ◽

Ting-Chang Chang ◽

Hung-Wei Li ◽

Shih-Ching Chen ◽

Yu-Chun Chen ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Thermal Instability ◽

Sol Gel ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors

Journal of Applied Physics ◽

10.1063/1.3662869 ◽

2011 ◽

Vol 110 (11) ◽

pp. 114503 ◽

Author(s):

Md Delwar Hossain Chowdhury ◽

Sang Hyun Ryu ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Annealing Time ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

Journal of Applied Physics ◽

10.1063/1.4870458 ◽

2014 ◽

Vol 115 (13) ◽

pp. 134502 ◽

Author(s):

Jae Gwang Um ◽

Mallory Mativenga ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Elevated Temperature ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

Applied Physics Letters ◽

10.1063/1.4948765 ◽

2016 ◽

Vol 108 (18) ◽

pp. 182104 ◽

Author(s):

Eungtaek Kim ◽

Choong-Ki Kim ◽

Myung Keun Lee ◽

Tewook Bang ◽

Yang-Kyu Choi ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Insulator ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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