scholarly journals The Impacts of Back-Surface Passivation Using Shallow Ion Implantation and Pulsed Laser Thermal Annealing on Back-Illuminated CMOS Image Sensors Performances: Physical and Electrical Characterizations

2011 ◽  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Surface Passivation ◽  
Pulsed Laser ◽  
Image Sensors ◽  
Back Surface ◽  
Cmos Image Sensors ◽  
Electrical Characterizations ◽  
Back Illuminated

Non-melt Laser Thermal Annealing of Shallow Boron Implantation for Back Surface Passivation of Backside-Illuminated CMOS Image Sensors

2011 ◽  
Vol 1321 ◽  
Author(s):  
Zahra AIT FQIR ALI-GUERRY ◽  
Karim HUET ◽  
Didier DUTARTRE ◽  
Rémi BENEYTON ◽  
Daniel BENSAHEL ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Surface Passivation ◽  
Sensor Technology ◽  
Back Surface ◽  
Simple Diffusion ◽  
Cmos Image Sensors ◽  
Boron Implantation ◽  
Multiple Pulses ◽  
Thermal Simulations ◽  
Backside Illuminated

ABSTRACTBack surface passivation is one of the major challenges in the backside illuminated sensor technology. Ion implantation followed by non-melt pulsed Laser Thermal Annealing (LTA) has been identified as a promising candidate to address this issue. In this work, a shallow B-doped layer is implanted at the backside, further activated using LTA in the non-melt regime. LTA process effectiveness in terms of crystal damage recovery as well as dopant diffusion and activation is studied through room-temperature photoluminescence, Secondary Ion Mass Spectroscopy and four-point probe sheet resistance. These studies demonstrate that non-melt LTA with multiple pulses induces high activation without visible diffusion with an effective curing of the implantation-induced crystalline defects. This is made possible thanks to a submicrosecond process timescale coupled to a reasonable number of shots as shown by thermal simulations and simple diffusion estimations.

Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A review

2021 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryosuke Okuyama ◽  
Ayumi Onaka-Masada ◽  
Satoshi Shigematsu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Wafer ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors

scholarly journals Formation of the IR photodetecting structures based on silicon hyperdoped with tellurium

2019 ◽  
Vol 63 (4) ◽  
pp. 430-436
Author(s):  
Fadei F. Komarov ◽  
Nikita S. Nechaev ◽  
Irina N. Parkhomenko ◽  
Gennadii D. Ivlev ◽  
Liudmila A. Vlasukova ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Absorption Coefficient ◽  
Absorption Spectra ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Photon Absorption ◽  
Laser Melting ◽  
Furnace Annealing ◽  
Impurity Atoms

The Si layers doped with Te up to the concentrations of (3–5)1020 cm–3 have been formed via ion implantation and pulsed laser melting. It is found, 70–90 % of the embedded impurity atoms are in substitution states in the silicon lattice. These layers have revealed significant absorption (35–66 %) in the wavelength λ range of 1100–2500 nm. In this case, the absorption coefficient increases with the λ growth. The absorption spectra of the implanted layers after pulsed laser melting, equilibrium furnace annealing, and rapid thermal annealing have been compared. It is shown that equilibrium furnace annealing increases the photon absorption by 4 % in the wavelength range of 1100–2500 nm in comparison with virgin Si. After rapid thermal annealing, the photon absorption in the IR-range increases only by 2 %.

Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review

2017 ◽  
Vol 214 (7) ◽  
pp. 1700216 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigemastu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Implantation Technique ◽  
Cmos Image Sensors ◽  
Cluster Ion

Investigation of a Sequential Three-Dimensional Process for Back-Illuminated CMOS Image Sensors With Miniaturized Pixels

2009 ◽  
Vol 56 (11) ◽  
pp. 2403-2413 ◽  
Author(s):  
Perceval Coudrain ◽  
Pierre Magnan ◽  
Perrine Batude ◽  
Xavier Gagnard ◽  
CÉdric Leyris ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Image Sensors ◽  
Cmos Image Sensors ◽  
Back Illuminated

Back-illuminated three-dimensionally integrated CMOS image sensors for scientific applications

2007 ◽  
Author(s):  
Vyshnavi Suntharalingam ◽  
Dennis D. Rathman ◽  
Gregory Prigozhin ◽  
Steven Kissel ◽  
Mark Bautz
Keyword(s):  
Image Sensors ◽  
Scientific Applications ◽  
Cmos Image Sensors ◽  
Back Illuminated

scholarly journals A Review of Proximity Gettering Technology for CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation

2019 ◽  
Vol 31 (6) ◽  
pp. 1939 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors

scholarly journals Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review (Phys. Status Solidi A 7∕2017)

2017 ◽  
Vol 214 (7) ◽  
pp. 1770141
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigemastu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Implantation Technique ◽  
Cmos Image Sensors ◽  
Cluster Ion
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