scholarly journals Microstructure and Surface Impurity Segregation in Al-Substituted Li7La3Zr2O12

2013 ◽  
Keyword(s):  
Surface Impurity ◽  
Impurity Segregation

On impurity segregation on dislocations in metals

1993 ◽  
Vol 3 (2) ◽  
pp. 179-183 ◽  
Author(s):  
Yu. S. Netchaev ◽  
L. V. Mukhina
Keyword(s):  
Impurity Segregation

Synthesis, Ultrapurification and Analysis of LaF3 for Fluoride Optical Fibers

1986 ◽  
Vol 88 ◽  
Author(s):  
D. R. Gabbe ◽  
R. C. Folweiler ◽  
F. X. Pink
Keyword(s):  
Neutron Activation Analysis ◽  
Optical Fibers ◽  
Ionic Radius ◽  
Concentration Profiles ◽  
Zone Refining ◽  
Impurity Segregation ◽  
A Value ◽  
Coefficient Versus ◽  
Rare Earth Impurities ◽  
Measured Distribution

ABSTRACTLanthanum chloride was synthesized by reacting La2O3 with CCl4. Purification carried out by zone refining resulted in reduction of Nd and Eu concentrations by at least a factor of 103. Impurity segregation coefficients were calculated from the concentration profiles in the charge measured by neutron activation analysis. Values of 0.85, 0.5, and 0.15 were found for Ce, Nd and Eu while a value of 0.65 was obtained for Pr from a plot of measured distribution coefficient versus ionic radius. These results show the feasibility of removing rare earth impurities to the ppb level from LaCl3. After purification, LaC13 is converted to LaF3

scholarly journals Examination of Thick-Films Using Modern Surface Analytical Techniques

1984 ◽  
Vol 11 (3) ◽  
pp. 219-223 ◽  
Author(s):  
G. Harsányi ◽  
G. Ripka
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Analytical Methods ◽  
Thick Films ◽  
Analytical Techniques ◽  
Electrical Measurements ◽  
Surface Impurity ◽  
And Migration

Modern surface analytical methods/EMPA, AES, SIMS etc. were used for studying the different layers in thick-film integrated circuits. Diffusion and migration effects, surface impurity distributions and surface compositions were examined. Some of the results are presented in this paper. Electrical measurements are not discussed here; only examples of the practical use of the methods are demonstrated.

Concentration-Independent Solute Segregation in Laser Annealing of Semiconductor Crystals

1983 ◽  
Vol 23 ◽  
Author(s):  
Jun-ichi Chikawa ◽  
Fumio Sato ◽  
Tadasu Sunada
Keyword(s):  
Mixed Crystal ◽  
Laser Annealing ◽  
Solute Segregation ◽  
Atomic Processes ◽  
Segregation Coefficient ◽  
Depth Profiles ◽  
Semiconductor Crystals ◽  
Impurity Segregation ◽  
Solute Atoms ◽  
Interfacial Segregation

ABSTRACTAtomic processes at the interface in regrowth following laser induced melting were investigated by observing behavior of impurity segregation. The interfacial segregation coefficient k* was obtained from depth profiles of solute atoms redistributed by laser irradiation of uniformly doped Si, Ge, and GayAl1−yAs crystals. It was found that k*=k0 for B in Si, Ga in Ge ih the growth rate range of 1 m/s. It is concluded that rapid growth freezes a state of liquid monolayer adjacent to the interface which has the character of ideal solution from dilute to eutectic composition for dopant-silicon systems and in the entire range of composition for the mixed crystal.

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