Photo-Electroless-Etching of Wide Band Gap Material for Flexible Solid-State Devices

2014 ◽  
Vol 1 ◽  
Author(s):  
Faiz Rahman

ABSTRACTLight-emitting diodes (LEDs) made from wide band gap semiconductors, such as gallium nitride, are undergoing rapid development. Solid-state lighting with these LEDs is transforming patterns of energy usage and lifestyle throughout the world.With solid-state lighting gradually taking over from incandescent and fluorescent lighting, light-emitting diodes (LEDs) are very much the focus of research nowadays. This compact review takes a look at LEDs for lighting applications made from wide band gap semiconductors. A very brief history of electric lighting is included for completeness, followed by a description of blue-emitting LEDs that serve as pump sources for all ‘white’ LEDs. This is followed by a discussion on techniques to extract more light from the confines of LED chips through surface patterning. The thermal management of LEDs is perhaps the most important consideration in designing and using LED-based luminaires. This topic is discussed with regard to recent studies on LED reliability. The very promising development of gallium nitride-on-silicon LEDs is examined next followed by a discussion on phosphors for color conversion in LEDs. LED lighting has positively influenced both upscale and downscale illumination markets worldwide. Its societal impact is examined, with the review concluding with a look at efforts to produce LEDs from zinc oxide – a material that holds much promise for the future of solid-state lighting.


ACS Omega ◽  
2021 ◽  
Vol 6 (17) ◽  
pp. 11537-11544
Author(s):  
Hanqing Dai ◽  
Wenqian Xu ◽  
Zhe Hu ◽  
Yuanyuan Chen ◽  
Jing Gu ◽  
...  

2002 ◽  
Vol 12 (02) ◽  
pp. 421-428
Author(s):  
ELIAS MUÑOZ

UV emitters and photodetectors based on wide band-gap semiconductors are being investigated and may soon become commercially available. Solid state lighting and information storage are two main applications in the consumer area for these new semiconductor devices. Presently, III-nitrides seem to be the most promising materials for such near UV semiconductor devices. In this work some non-consumer applications are indicated. Biophotonics appears to be a very promising area for such devices.


2013 ◽  
Vol 60 (2) ◽  
pp. 1175-1181 ◽  
Author(s):  
Mark David Hammig ◽  
Xiao Jie Chen ◽  
Joseph C. Campbell ◽  
Taehoon Kang ◽  
Wenlu Sun ◽  
...  
Keyword(s):  
Band Gap ◽  

Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  

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