Low Power FDSOI Technology and Devices for RF Applications

2002 ◽

Cited By ~ 2

Author(s):

T. Sowlati ◽

V. Vathulya ◽

D. Leenaerts

Keyword(s):

Low Power ◽

High Density ◽

Rf Applications ◽

Submicron Cmos

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A 0.13-μm SOI CMOS technology for low-power digital and RF applications

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934959 ◽

2002 ◽

Cited By ~ 14

Author(s):

N. Zamdmer ◽

A. Ray ◽

J.-O. Plouchart ◽

L. Wagner ◽

N. Fong ◽

...

Keyword(s):

Low Power ◽

Cmos Technology ◽

Rf Applications ◽

Soi Cmos

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Asymmetric Underlap Dual Material Gate DG-FET for Low Power Analog/RF Applications

Journal of Low Power Electronics ◽

10.1166/jolpe.2015.1415 ◽

2015 ◽

Vol 11 (4) ◽

pp. 509-516 ◽

Cited By ~ 1

Author(s):

Atanu Kundu ◽

Arka Dutta ◽

Chandan K. Sarkar

Keyword(s):

Low Power ◽

Rf Applications ◽

Dual Material

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A 50-nm CMOS technology for high-speed, low-power, and RF applications in 100-nm node SoC platform

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979472 ◽

2002 ◽

Cited By ~ 2

Author(s):

K. Ohnishi ◽

R. Tsuchiya ◽

T. Yamauchi ◽

F. Ootsuka ◽

K. Mitsuda ◽

...

Keyword(s):

Low Power ◽

High Speed ◽

Cmos Technology ◽

Rf Applications

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A New Low-power, High-Q, Wide Tunable CMOS Active Inductor for RF Applications

IETE Journal of Research ◽

10.1080/03772063.2015.1117952 ◽

2015 ◽

Vol 62 (2) ◽

pp. 265-273 ◽

Cited By ~ 16

Author(s):

Sehmi Saad ◽

Mongia Mhiri ◽

Aymen Ben Hammadi ◽

Kamel Besbes

Keyword(s):

Low Power ◽

Active Inductor ◽

High Q ◽

Rf Applications

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A 185 GHz f/sub max/ SOI DTMOS with a new metallic overlay-gate for low-power RF applications

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979672 ◽

2002 ◽

Author(s):

T. Hirose ◽

Y. Momiyama ◽

M. Kosugi ◽

H. Kano ◽

Y. Watanabe ◽

...

Keyword(s):

Low Power ◽

Rf Applications

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A Low-power Tunable Bandpass Amplifier for RF Applications

APCCAS 2006 - 2006 IEEE Asia Pacific Conference on Circuits and Systems ◽

10.1109/apccas.2006.342162 ◽

2006 ◽

Cited By ~ 2

Author(s):

Kun-Yi Lin ◽

Ro-Min Weng

Keyword(s):

Low Power ◽

Rf Applications

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Performance Evaluation of a Novel Si0.6Ge0.4/Ge Doping-Less TFET for Enhanced Low Power Analog/RF Applications

Lecture Notes in Electrical Engineering - Recent Trends in Electronics and Communication ◽

10.1007/978-981-16-2761-3_77 ◽

2021 ◽

pp. 875-884

Author(s):

Suruchi Sharma ◽

Rikmantra Basu ◽

Baljit Kaur

Keyword(s):

Performance Evaluation ◽

Low Power ◽

Rf Applications ◽

Ge Doping

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A manufacturable SOI CMOS process for low power digital, analog, and RF applications

1997 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1997.634937 ◽

2002 ◽

Cited By ~ 7

Author(s):

M. Stuber ◽

P. Dennies ◽

G. Lyons ◽

T. Kobayashi ◽

H. Domyo

Keyword(s):

Low Power ◽

Cmos Process ◽

Rf Applications ◽

Soi Cmos

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A Wide-Band, Low-Power Grounded Active Inductor with High Q Factor for RF Applications

Lecture Notes in Electrical Engineering - International Conference on Communication, Computing and Electronics Systems ◽

10.1007/978-981-15-2612-1_52 ◽

2020 ◽

pp. 541-548

Author(s):

L. Bharath ◽

D. Anila ◽

C. N. Ajay ◽

B. Shravani ◽

Amit Jain

Keyword(s):

Low Power ◽

Wide Band ◽

Active Inductor ◽

Q Factor ◽

High Q ◽

Rf Applications

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Low Power FDSOI Technology and Devices for RF Applications

High density capacitance structures in submicron CMOS for low power RF applications

A 0.13-μm SOI CMOS technology for low-power digital and RF applications

Asymmetric Underlap Dual Material Gate DG-FET for Low Power Analog/RF Applications

A 50-nm CMOS technology for high-speed, low-power, and RF applications in 100-nm node SoC platform

A New Low-power, High-Q, Wide Tunable CMOS Active Inductor for RF Applications

A 185 GHz f/sub max/ SOI DTMOS with a new metallic overlay-gate for low-power RF applications

A Low-power Tunable Bandpass Amplifier for RF Applications

Performance Evaluation of a Novel Si0.6Ge0.4/Ge Doping-Less TFET for Enhanced Low Power Analog/RF Applications

A manufacturable SOI CMOS process for low power digital, analog, and RF applications

A Wide-Band, Low-Power Grounded Active Inductor with High Q Factor for RF Applications

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