Dielectrics & Electrostatics: Their Effect on Carbon Nanotube Network Field-Effect Transistors and Gas Sensors

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Bau-Tong Dai ◽  
Ming-Yen Lee

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.


2008 ◽  
Vol 132 (1) ◽  
pp. 191-195 ◽  
Author(s):  
Ning Peng ◽  
Qing Zhang ◽  
Yi Chau Lee ◽  
Ooi Kiang Tan ◽  
Nicola Marzari

2008 ◽  
Vol 93 (24) ◽  
pp. 243115 ◽  
Author(s):  
Dong Wan Kim ◽  
Gyu Sik Choe ◽  
Sung Min Seo ◽  
Jun Ho Cheon ◽  
Hansuk Kim ◽  
...  

2019 ◽  
Vol 115 (17) ◽  
pp. 173503 ◽  
Author(s):  
Hao Huang ◽  
Xingqiang Liu ◽  
Fang Liu ◽  
Chuansheng Liu ◽  
Xuelei Liang ◽  
...  

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