200 mm Ge Wafer Production for Oxide-Free Si-Ge Direct Wafer Bonding

ECS Meeting Abstracts ◽

10.1149/ma2020-02221624mtgabs ◽

2020 ◽

Vol MA2020-02 (22) ◽

pp. 1624-1624

Author(s):

Bernhard Rebhan ◽

Johannes Vanpaemel ◽

Viorel Dragoi

Keyword(s):

Wafer Bonding ◽

Direct Wafer Bonding

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High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

ECS Transactions ◽

10.1149/07509.0345ecst ◽

2016 ◽

Vol 75 (9) ◽

pp. 345-353 ◽

Author(s):

F. Kurz ◽

T. Plach ◽

J. Suss ◽

T. Wagenleitner ◽

D. Zinner ◽

...

Keyword(s):

Low Temperature ◽

High Precision ◽

Wafer Bonding ◽

Wafer Level ◽

3D Ics ◽

Direct Wafer Bonding ◽

Bonding Technology

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Low temperature GaAs/Si direct wafer bonding

Electronics Letters ◽

10.1049/el:20000507 ◽

2000 ◽

Vol 36 (7) ◽

pp. 677 ◽

Author(s):

M. Alexe ◽

V. Dragoi ◽

M. Reiche ◽

U. Gösele

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Direct Wafer Bonding ◽

Low Temperature Gaas

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An Atomic Force Microscopy Study on the Roughness of Silicon Wafers Correlated with Direct Wafer Bonding

Journal of The Electrochemical Society ◽

10.1149/1.1837009 ◽

1996 ◽

Vol 143 (7) ◽

pp. 2365-2371 ◽

Author(s):

Brian E. Roberds ◽

Shari N. Farrens

Keyword(s):

Atomic Force Microscopy ◽

Wafer Bonding ◽

Microscopy Study ◽

Silicon Wafers ◽

Atomic Force Microscopy Study ◽

Force Microscopy ◽

Atomic Force ◽

Direct Wafer Bonding

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Point defects generated by direct-wafer bonding of silicon

Journal of Electronic Materials ◽

10.1007/s11664-002-0156-x ◽

2002 ◽

Vol 31 (2) ◽

pp. 113-118 ◽

Author(s):

L. Dózsa ◽

B. Szentpáli ◽

D. Pasquariello ◽

K. Hjort

Keyword(s):

Point Defects ◽

Wafer Bonding ◽

Direct Wafer Bonding

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New Generation of Structures Obtained by Direct Wafer Bonding of Processed Wafers

ECS Transactions ◽

10.1149/1.2357057 ◽

2019 ◽

Vol 3 (6) ◽

pp. 79-90 ◽

Author(s):

Bernard Aspar ◽

Chrystelle Lagahe-Blanchard ◽

Nicolas Sousbie ◽

Jacques Margail ◽

H. Moriceau

Keyword(s):

Wafer Bonding ◽

Direct Wafer Bonding ◽

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Pb(Zr,Ti)O3-silicon heterostructures fabricated by direct wafer bonding

Integrated Ferroelectrics ◽

10.1080/10584589808012697 ◽

1998 ◽

Vol 19 (1-4) ◽

pp. 95-109 ◽

Author(s):

Marin Alexe ◽

James F. Scott ◽

Alain Pignolet ◽

Dietrich Hesse ◽

Ulrich Gösele

Keyword(s):

Wafer Bonding ◽

Direct Wafer Bonding ◽

Silicon Heterostructures

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(Invited) Water Transport Along Si/Si Direct Wafer Bonding Interfaces

ECS Transactions ◽

10.1149/08605.0039ecst ◽

2018 ◽

Vol 86 (5) ◽

pp. 39-47

Author(s):

François Rieutord ◽

Samuel Tardif ◽

Ivan Nikitskiy ◽

Frank Fournel ◽

Marwan Tedjini ◽

...

Keyword(s):

Water Transport ◽

Wafer Bonding ◽

Direct Wafer Bonding

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Silicon nanocrystallites in buried SiOx layers via direct wafer bonding

Applied Physics Letters ◽

10.1063/1.124467 ◽

1999 ◽

Vol 75 (5) ◽

pp. 641-643 ◽

Author(s):

U. Kahler ◽

H. Hofmeister

Keyword(s):

Wafer Bonding ◽

Direct Wafer Bonding ◽

Silicon Nanocrystallites

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Vertical and lateral heterogeneous integration using direct wafer bonding

Compound Semiconductors 2001 ◽

10.1201/9781482268980-47 ◽

2002 ◽

pp. 321-326

Keyword(s):

Wafer Bonding ◽

Heterogeneous Integration ◽

Direct Wafer Bonding

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Investigations on Bond Strength Development of Plasma Activated Direct Wafer Bonding with Annealing

ECS Transactions ◽

10.1149/05007.0277ecst ◽

2013 ◽

Vol 50 (7) ◽

pp. 277-285 ◽

Author(s):

T. Plach ◽

K. Hingerl ◽

D. Stifter ◽

V. Dragoi ◽

M. Wimplinger

Keyword(s):

Bond Strength ◽

Wafer Bonding ◽

Strength Development ◽

Direct Wafer Bonding

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