Growth and Characterizations of Mg-doped GaAs Films

Characterizations of p-type GaAs Films

10.1149/osf.io/s97ew ◽

2020 ◽

Author(s):

Sang Zhen

Keyword(s):

Atomic Force Microscopy ◽

Low Temperature ◽

Surface Morphology ◽

Force Microscopy ◽

Atomic Force ◽

Gaas Films ◽

Growth Method ◽

P Type ◽

Low Temperature Photoluminescence

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

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MOVPE Growth of Mg-doped GaAs Films

10.1149/osf.io/zjqpn ◽

2020 ◽

Author(s):

Xiejia

Keyword(s):

Atomic Force Microscopy ◽

Low Temperature ◽

Force Microscopy ◽

Atomic Force ◽

Movpe Growth ◽

Gaas Films ◽

Growth Method ◽

P Type ◽

Low Temperature Photoluminescence ◽

Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

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Si Doped GaAs (001) Films

10.1149/osf.io/3ufzk ◽

2020 ◽

Author(s):

Shu

Keyword(s):

Atomic Force Microscopy ◽

Low Temperature ◽

Surface Morphology ◽

Force Microscopy ◽

Atomic Force ◽

Growth Method ◽

Si Doped ◽

P Type ◽

Low Temperature Photoluminescence

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

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Some aspects of AIIIBV and AIIBVI growth

MRS Proceedings ◽

10.1557/opl.2014.337 ◽

2014 ◽

Vol 1635 ◽

pp. 89-93

Author(s):

Oleg Rabinovich

Keyword(s):

Atomic Force Microscopy ◽

Surface Morphology ◽

Surface Density ◽

Force Microscopy ◽

Atomic Force ◽

Growth Method

ABSTRACTNanoisland films have been grown via incongruent evaporation films. The basis of incongruent evaporation growth method was worked out. Samples surface morphology has been studied by atomic force microscopy. The surface density and characteristic dimensions of the islands have been shown.

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Nitridation of Substrates With Hydrazine Cyanurate for The Growth of Gallium Nitride

MRS Proceedings ◽

10.1557/proc-512-227 ◽

1998 ◽

Vol 512 ◽

Author(s):

T. J. Kropewnicki ◽

P. A. Kohl

Keyword(s):

Atomic Force Microscopy ◽

Chemical Composition ◽

Low Temperature ◽

Surface Morphology ◽

Photoelectron Spectroscopy ◽

Three Dimensional ◽

X Ray ◽

Force Microscopy ◽

Atomic Force ◽

Dimensional Growth

ABSTRACTThe use of purified hydrazine cyanurate as a solid source of hydrazine in the low temperature nitridation of GaAs (100) and (111) and sapphire (0001) is demonstrated. Thenitridated surfaces were analyzed by X-ray Photoelectron Spectroscopy (XPS) for chemical composition and Atomic Force Microscopy for surface morphology. The GaAs surfaces were composed primarily of GaN, GaAs, and Ga2O3, and were as smooth as unprocessed standards. The nitridated sapphire surfaces were composed of A1NxO1-x and exhibited three-dimensional growth for long nitridation times.

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