scholarly journals MOVPE Growth of Mg-doped GaAs Films

2020 ◽  
Author(s):  
Xiejia
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Movpe Growth ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

scholarly journals Growth and Characterizations of Mg-doped GaAs Films

2020 ◽  
Author(s):  
Dong Fong
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

scholarly journals Characterizations of p-type GaAs Films

2020 ◽  
Author(s):  
Sang Zhen
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

scholarly journals Si Doped GaAs (001) Films

2020 ◽  
Author(s):  
Shu
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Method ◽  
Si Doped ◽  
P Type ◽  
Low Temperature Photoluminescence

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

Low temperature corneal laser welding investigated by atomic force microscopy

2009 ◽  
Author(s):  
Paolo Matteini ◽  
Francesca Sbrana ◽  
Bruno Tiribilli ◽  
Roberto Pini
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Laser Welding ◽  
Force Microscopy ◽  
Atomic Force

Reflection High Energy Electron Diffraction and Atomic Force Microscopy Studies of MnxSc(1-x) Alloys Grown on MgO(001) Substrates by Molecular Beam Epitaxy

2011 ◽  
Vol 1295 ◽  
Author(s):  
Costel Constantin ◽  
Abhijit Chinchore ◽  
Arthur R. Smith
Keyword(s):  
Atomic Force Microscopy ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Method

ABSTRACTThe combination of the molecular beam epitaxy growth method with the in-situ reflection high energy electron diffraction measurements currently offers unprecedented control of crystalline growth materials. We present here a stoichiometric study of MnxSc(1-x) [x = 0, 0.03, 0.05, 0.15, 0.25, 0.35, and 0.50] thin films grown on MgO(001) substrates with this growth method. Reflection high energy electron diffraction and atomic force microscopy measurements reveal alloy behavior for all of our samples. In addition, we found that samples Mn0.10Sc0.90 and Mn0.50Sc0.50 display surface self-assembled nanowires with a length/width ratio of ~ 800 – 2000.

Morphology of Low Temperature Carbon Films Prepared by VHF CVD: Correlation with Field Emission

1998 ◽  
Vol 509 ◽  
Author(s):  
A.N. Titkov ◽  
A.I. Kosarev ◽  
A.J. Vinogradov ◽  
Z. Waqar ◽  
I.V. Makarenko ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Field Emission ◽  
Significant Influence ◽  
Substrate Surface ◽  
Carbon Films ◽  
Emission Characteristics ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

AbstractThe effect of deposition parameters and substrate on the morphology of carbon films prepared in VHF plasma at low temperature has been studied by Atomic Force Microscopy. Carbon films demonstrating superior emission characteristics were the smoothest, but not all of the smoothest films demonstrated good emission. Significant influence of pre-growth treatment of the substrate surface on the emission characteristics of the films was found.

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