scholarly journals Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 343-347 ◽  
Author(s):  
Jürgen Jakumeit ◽  
Amanda Duncan ◽  
Umberto Ravaioli ◽  
Karl Hess
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
High Energy ◽  
Stationary Condition ◽  
Good Resolution ◽  
Mutation Operator ◽  
Hot Electron ◽  
High Energy Tail ◽  
Electron Distributions ◽  
Dimensional Simulation

The Mutation Operator Monte Carlo method (MOMC) is a new type of Monte Carlo technique for the study of hot electron related effects in semiconductor devices. The MOMC calculates energy distributions of electrons by a physical mutation of the distribution towards a stationary condition. In this work we compare results of an one dimensional simulation of an 800nm Si-MOSFET with full band Monte Carlo calculations and measurement results. Starting from the potential distribution resulting from a drift diffusion simulation, the MOMC calculates electron distributions which are comparable to FBMC-results within minutes on a modern workstation. From these distributions, substrate and gate currents close to experimental results can be calculated. These results show that the MOMC is useful as a post-processor for the investigation of hot electron related problems in Si-MOSFETs. Beside the computational efficiency, a further advantage of the MOMC compared to standard MC techniques is the good resolution of the high energy tail of the distribution without the necessity of any statistical enhancement.

scholarly journals New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 307-311
Author(s):  
J. Jakumeit ◽  
U. Ravaioli ◽  
K. Hess
Keyword(s):  
Monte Carlo ◽  
Evolutionary Algorithm ◽  
Mutation Operator ◽  
Hot Electron ◽  
New Approach ◽  
Substrate Current ◽  
Electron Distributions ◽  
First Results ◽  
Calculation Ability ◽  
Electron Effects

We introduce a new approach to hot electron effects in Si-MOSFETs, based on a mixture of evolutionary optimization algorithms and Monte Carlo technique. The Evolutionary Algorithm searchs for electron distributions which fit a given goal, for example a measured substrate current and in this way can calculate backwards electron distributions from measurement results. The search of the Evolutionary Algorithm is directed toward physically correct distributions by help of a Monte Carlo like mutation operator. Results for bulk-Si demonstrate the correctness of the physical model in the Monte Carlo like mutation operator and the backward calculation ability of the Evolutionary Algorithm. First results for Si-MOSFETs are qualitatively comparable to results of a Full Band Monte Carlo simulation.

scholarly journals Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 175-178
Author(s):  
T. Mietzner ◽  
J. Jakumeit ◽  
U. Ravaioli
Keyword(s):  
Monte Carlo ◽  
Electron Scattering ◽  
Electron Distribution ◽  
Field Effect Transistors ◽  
High Energy ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electron Interaction ◽  
High Energy Tail ◽  
Electron Distributions

The effects of electron–electron interaction on the electron distribution in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied using the Local Iterative Monte Carlo (LIMO) technique. This work demonstrates that electron–electron scattering can be efficiently treated within this technique. The simulation results of a 90 nm Si-MOSFET are presented. We observe an increase of the high energy tail of the electron distribution at the transition from channel to drain.

scholarly journals Monte Carlo calculations of the atmospheric sputtering yields on Titan

2019 ◽  
Vol 623 ◽  
pp. A18 ◽  
Author(s):  
H. Gu ◽  
J. Cui ◽  
D.-D. Niu ◽  
A. Wellbrock ◽  
W.-L. Tseng ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Incidence Angle ◽  
Monte Carlo Model ◽  
High Energy ◽  
Special Focus ◽  
Angle Distribution ◽  
Model Calculations ◽  
Atmospheric Escape ◽  
High Energy Tail ◽  
Sputtering Yields

Context. Sputtering serves as an important mechanism of atmospheric escape in the solar system. Aims. This study is devoted to atmospheric sputtering on Titan, with a special focus on how the N2 and CH4 sputtering yields respond to varying ion incidence energy and angle, and varying ion mass. Methods. A Monte Carlo model was constructed to track the energy degradation of incident ions and atmospheric recoils from which the sputtering yields were obtained. A large number of model runs were performed, taking into account three categories of incident ion with representative masses of 1, 16, and 28 Da, as well as two collision models both characterized by a strongly forward scattering angle distribution, but different in terms of the inclusion or exclusion of electronic excitation of ambient neutrals. Results. Our model calculations reveal substantial increases in both the N2 and CH4 sputtering yields with increasing ion incidence energy and angle, and increasing ion mass. The energy distribution of escaping molecules is described reasonably well by a power law, with an enhanced high energy tail for more energetic incident ions and less massive atmospheric recoils. The CH4-to-N2 sputtering yield ratio is found to range from 10 to 20%, increasing with increasing incidence angle and also increasing with decreasing incidence energy. An approximate treatment of ion impact chemistry is also included in our model, predicting N2 sputtering yields on Titan that are in broad agreement with previous results.

Simulation of 12 C+ 12 C elastic scattering at high energy by using the Monte Carlo method

2012 ◽  
Vol 36 (3) ◽  
pp. 205-209 ◽  
Author(s):  
Chen-Lei Guo ◽  
Gao-Long Zhang ◽  
I. Tanihata ◽  
Xiao-Yun Le
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Elastic Scattering ◽  
High Energy ◽  
The Monte Carlo Method

Application of the monte carlo method to high energy electron scattering (0.3-1.5 MeV)

1978 ◽  
Vol 36 (1) ◽  
pp. 202-203
Author(s):  
G. Soum ◽  
F. Arnal ◽  
J.L. Balladore ◽  
B. Jouffrey ◽  
P. Verdier
Keyword(s):  
Monte Carlo ◽  
Angular Distribution ◽  
Monte Carlo Method ◽  
Transmission Coefficient ◽  
Electron Scattering ◽  
High Energy ◽  
Angular Aperture ◽  
Method Of Calculation ◽  
Total Transmission ◽  
The Monte Carlo Method

Techniques for using the Monte-Carlo method for studying electron scattering in solids have been developed by several authors (1). The method is used to determine the angular distribution of electrons emerging from amorphous or polycrystalline specimens ; the total transmission and backscattering coefficients can also be obtained.- Method of calculation -Let Iθ be the intensity scattered in the direction making an angle θ with the incident electrons ; thus Iθ represents the number of electrons scattered in this direction within a solid angle Δw = πα2, where α is the semi-angle of the collector as seen from the specimen. For a specimen of thickness x, the angular distribution function may be written:I∘ denotes the intensity of the incident monoenergetic electron beam, Tα the transmission coefficient along the direction of incidence for a semi-angular aperture α and TθN the normalized transmission coefficient in the direction θ

scholarly journals Efficient Silicon Device Simulation with the Local Iterative Monte Carlo Method

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 57-61
Author(s):  
Jürgen Jakumeit ◽  
Torsten Mietzner ◽  
Umberto Ravaioli
Keyword(s):  
Monte Carlo ◽  
Iteration Process ◽  
Computation Time ◽  
Iteration Scheme ◽  
Hot Electron ◽  
Short Channel ◽  
Standard Work ◽  
Electron Distributions ◽  
Computational Resources ◽  
Silicon Device

The Local Iterative Monte Carlo technique (LIMO) is used for an effective simulation of hot electron distributions in silicon MOSFETs. This new Monte Carlo approach yields an efficient use of the computational resources due to a different iteration scheme. In addition the necessary computation time can be further reduced by a reuse of the computational expensive MC step simulation results in the iteration process. The later possibility is investigated in detail in this work. Results for short channel MOSFETs demonstrates that correct two-dimensional hot electron distributions can be calculated by LIMO within 1 hour on a standard work station.

Sign in / Sign up

Export Citation Format

Share Document