scholarly journals Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 175-178
Author(s):  
T. Mietzner ◽  
J. Jakumeit ◽  
U. Ravaioli
Keyword(s):  
Monte Carlo ◽  
Electron Scattering ◽  
Electron Distribution ◽  
Field Effect Transistors ◽  
High Energy ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electron Interaction ◽  
High Energy Tail ◽  
Electron Distributions

The effects of electron–electron interaction on the electron distribution in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied using the Local Iterative Monte Carlo (LIMO) technique. This work demonstrates that electron–electron scattering can be efficiently treated within this technique. The simulation results of a 90 nm Si-MOSFET are presented. We observe an increase of the high energy tail of the electron distribution at the transition from channel to drain.

Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors

2008 ◽  
Vol 104 (4) ◽  
pp. 044504 ◽  
Author(s):  
Karim Huet ◽  
Damien Querlioz ◽  
Wipa Chaisantikulwat ◽  
Jérôme Saint-Martin ◽  
Arnaud Bournel ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Monte Carlo Study ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nanometer Scale

scholarly journals Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 343-347 ◽  
Author(s):  
Jürgen Jakumeit ◽  
Amanda Duncan ◽  
Umberto Ravaioli ◽  
Karl Hess
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
High Energy ◽  
Stationary Condition ◽  
Good Resolution ◽  
Mutation Operator ◽  
Hot Electron ◽  
High Energy Tail ◽  
Electron Distributions ◽  
Dimensional Simulation

The Mutation Operator Monte Carlo method (MOMC) is a new type of Monte Carlo technique for the study of hot electron related effects in semiconductor devices. The MOMC calculates energy distributions of electrons by a physical mutation of the distribution towards a stationary condition. In this work we compare results of an one dimensional simulation of an 800nm Si-MOSFET with full band Monte Carlo calculations and measurement results. Starting from the potential distribution resulting from a drift diffusion simulation, the MOMC calculates electron distributions which are comparable to FBMC-results within minutes on a modern workstation. From these distributions, substrate and gate currents close to experimental results can be calculated. These results show that the MOMC is useful as a post-processor for the investigation of hot electron related problems in Si-MOSFETs. Beside the computational efficiency, a further advantage of the MOMC compared to standard MC techniques is the good resolution of the high energy tail of the distribution without the necessity of any statistical enhancement.

Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis

2007 ◽  
Vol 101 (11) ◽  
pp. 114511 ◽  
Author(s):  
J. Łusakowski ◽  
M. J. Martín Martínez ◽  
R. Rengel ◽  
T. González ◽  
R. Tauk ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Monte Carlo Analysis ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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