The Mutation Operator Monte Carlo method (MOMC) is a new type of Monte Carlo
technique for the study of hot electron related effects in semiconductor devices. The
MOMC calculates energy distributions of electrons by a physical mutation of the
distribution towards a stationary condition. In this work we compare results of an one
dimensional simulation of an 800nm Si-MOSFET with full band Monte Carlo
calculations and measurement results. Starting from the potential distribution resulting
from a drift diffusion simulation, the MOMC calculates electron distributions which are
comparable to FBMC-results within minutes on a modern workstation. From these
distributions, substrate and gate currents close to experimental results can be calculated.
These results show that the MOMC is useful as a post-processor for the investigation of
hot electron related problems in Si-MOSFETs. Beside the computational efficiency, a
further advantage of the MOMC compared to standard MC techniques is the good
resolution of the high energy tail of the distribution without the necessity of any
statistical enhancement.