Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics
2001 ◽
Vol 24
(3)
◽
pp. 187-199
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Keyword(s):
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects generated during stress time are simulated by a spatio-temporal gaussian distribution. The parasitic source and drain resistances are included. We also investigate the impact of the interface charge density, generated during stress, on the transconductance. Simulation results show a significant degradation of the drain current versus stress time.
2019 ◽
Vol 14
(6)
◽
pp. 868-876
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2020 ◽
Vol 21
(3)
◽
pp. 339-347
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1999 ◽
Vol 38
(Part 1, No. 2A)
◽
pp. 687-688
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