scholarly journals Sb-SnO2-Nanosized-Based Resistive Sensors for NO2Detection

2009 ◽  
Vol 2009 ◽  
pp. 1-7 ◽  
Author(s):  
T. Krishnakumar ◽  
R. Jayaprakash ◽  
N. Pinna ◽  
A. Donato ◽  
N. Donato ◽  
...  

A study over Sb-promoted tin oxide nanopowders for sensing applications is reported. nanopowders pure and promoted with 5 wt% of antimony were prepared by wet chemical methods and widely characterized by TEM, XRD, and XPS techniques. Thick film resistive sensors were fabricated by depositing the synthesized nanopowders by drop-coating on interdigited alumina substrates. The sensing characteristics of the pure and Sb-promoted sensors for the monitoring of trace level of were studied. The response of the sensors to water vapor was also investigated, revealing that Sb acts favorably eliminating the interference of humidity.

1982 ◽  
Vol 53 (11) ◽  
pp. 7125-7130 ◽  
Author(s):  
Takashi Oyabu ◽  
Tetsuo Osawa ◽  
Toshiji Kurobe

Author(s):  
D. Zudhistira ◽  
V. Viswanathan ◽  
V. Narang ◽  
J.M. Chin ◽  
S. Sharang ◽  
...  

Abstract Deprocessing is an essential step in the physical failure analysis of ICs. Typically, this is accomplished by techniques such as wet chemical methods, RIE, and mechanical manual polishing. Manual polishing suffers from highly non-uniform delayering particularly for sub 20nm technologies due to aggressive back-end-of-line scaling and porous ultra low-k dielectric films. Recently gas assisted Xe plasma FIB has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. In this paper, the successful application of this technique to delayer sub-20 nm microprocessor chips with real defects to root cause the failure is presented.


Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2123
Author(s):  
Ming Liu ◽  
Caochuang Wang ◽  
Pengcheng Li ◽  
Liang Cheng ◽  
Yongming Hu ◽  
...  

Many low-dimensional nanostructured metal oxides (MOXs) with impressive room-temperature gas-sensing characteristics have been synthesized, yet transforming them into relatively robust bulk materials has been quite neglected. Pt-decorated SnO2 nanoparticles with 0.25–2.5 wt% Pt were prepared, and highly attractive room-temperature hydrogen-sensing characteristics were observed for them all through pressing them into pellets. Some pressed pellets were further sintered over a wide temperature range of 600–1200 °C. Though the room-temperature hydrogen-sensing characteristics were greatly degraded in many samples after sintering, those samples with 0.25 wt% Pt and sintered at 800 °C exhibited impressive room-temperature hydrogen-sensing characteristics comparable to those of their counterparts of as-pressed pellets. The variation of room-temperature hydrogen-sensing characteristics among the samples was explained by the facts that the connectivity between SnO2 grains increases with increasing sintering temperature, and Pt promotes oxidation of SnO2 at high temperatures. These results clearly demonstrate that some low-dimensional MOX nanocrystals can be successfully transformed into bulk MOXs with improved robustness and comparable room-temperature gas-sensing characteristics.


2000 ◽  
Vol 31 (4) ◽  
pp. 283-290 ◽  
Author(s):  
A Chaturvedi ◽  
V.N Mishra ◽  
R Dwivedi ◽  
S.K Srivastava

Author(s):  
Vinayak R. Bagul ◽  
Ganesh R. Bhagure ◽  
Satish Arvind Ahire ◽  
Arun Vitthal Patil ◽  
Vishnu Ashok Adole ◽  
...  

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1621 ◽  
Author(s):  
Tao Zhang ◽  
Jun Ou-Yang ◽  
Xiaofei Yang ◽  
Benpeng Zhu

Approximately 25 μm Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) thick film was synthesized based on a sol-gel/composite route. The obtained PMN-PT thick film was successfully transferred from the Silicon substrate to the conductive silver epoxy using a novel wet chemical method. The mechanism of this damage free transfer was explored and analyzed. Compared with the film on Silicon substrate, the transferred one exhibited superior dielectric, ferroelectric and piezoelectric properties. These promising results indicate that transferred PMN-PT thick film possesses the capability for piezoelectric device application, especially for ultrasound transducer fabrication. Most importantly, this chemical route opens a new path for transfer of thick film.


2007 ◽  
Vol 90 (11) ◽  
pp. 3430-3434 ◽  
Author(s):  
Sverre M. Selbach ◽  
Mari-Ann Einarsrud ◽  
Thomas Tybell ◽  
Tor Grande

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