scholarly journals The Low-Temperature Crystallization and Interface Characteristics of ZnInSnO/In Films Using a Bias-Crystallization Mechanism

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
K. J. Chen ◽  
F. Y. Hung ◽  
T. S. Lui ◽  
S. J. Chang ◽  
Z. S. Hu
Keyword(s):  
Low Temperature ◽  
Transparent Conductive Oxide ◽  
Crystallization Mechanism ◽  
Critical Factors ◽  
Interface Characteristics ◽  
Short Period ◽  
Higher Temperature ◽  
Low Temperature Crystallization ◽  
Lower Temperature ◽  
Temperature Crystallization

This study presents a successful bias crystallization mechanism (BCM) based on an indium/glass substrate and applies it to fabrication of ZnInSnO (ZITO) transparent conductive oxide (TCO) films. The effects of bias-crystallization on electrical and structural properties of ZITO/In structure indicate that the current-induced Joule heating and interface diffusion were critical factors for low-temperature crystallization. With biases of 4 V and 0.1 A, the resistivity of the ZITO film was reduced from3.08×10−4 Ω∗cm to6.3×10−5 Ω∗cm. This reduction was attributed to the bias-induced energy, which caused indium atoms to diffuse into the ZITO matrix. This effectuated crystallizing the amorphous ZITO (a-ZITO) matrix at a lower temperature (approximately170∘C) for a short period (≤20 min) during a bias test. The low-temperature BCM developed for this study obtained an efficient conventional annealed treatment (higher temperature), possessed energy-saving and speed advantages, and can be considered a candidate for application in photoelectric industries.

Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films

2001 ◽  
Vol 16 (7) ◽  
pp. 1883-1886 ◽  
Author(s):  
Kwang Soo Seol ◽  
Hironao Hiramatsu ◽  
Yoshimichi Ohki ◽  
In-Hoon Choi ◽  
Yong-Tea Kim
Keyword(s):  
Low Temperature ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Precursor Film ◽  
Excimer Laser Irradiation ◽  
Low Temperature Crystallization ◽  
Lower Temperature ◽  
Substrate Temperatures ◽  
Induced Crystallization ◽  
Temperature Crystallization

Transition of a SrBi2Ta2O9 precursor film from amorphous to crystalline was inducedby excimer laser irradiation. Both fluorite and perovskite crystalline structures in suchfilms were obtained by excimer laser irradiation at substrate temperatures between 200and 500 °C. Either an addition of excess bismuth in the precursor film or an increasein the substrate temperature enhanced the formation of the perovskite structure in theexcimer laser-induced annealing process, resulting in the perovskite crystalline phase ata relatively lower temperature of 500 °C. Such a low temperature is preferred whenSrBi2Ta2O9 is used in ferroelectric devices. The mechanism involved in thislaser-induced crystallization is also discussed.

scholarly journals Ethanolamine-assisted low-temperature crystallization of hydroxide nanoparticle ink into transparent and conductive ITO layers

2019 ◽  
Vol 7 (7) ◽  
pp. 3083-3089 ◽  
Author(s):  
Yujing Liu ◽  
Thierry Moser ◽  
Christian Andres ◽  
Lovro Gorjan ◽  
Arndt Remhof ◽  
...  
Keyword(s):  
Surface Modification ◽  
Low Temperature ◽  
Crystallization Temperature ◽  
Transparent Conductive Oxide ◽  
Processing Method ◽  
Solution Processing ◽  
Conductive Oxide ◽  
Low Temperature Crystallization ◽  
Nanoparticle Ink ◽  
Temperature Crystallization

Surface modification with ethanolamine was elaborated to reduce crystallization temperature and achieve transparent conductive oxide (TCO) layers from a solution processing method.

Photo-assisted low temperature crystallization of solution-derived LiCoO2 thin film

2021 ◽  
Vol 138 ◽  
pp. 111241
Author(s):  
Boseon Yun ◽  
Tan Tan Bui ◽  
Paul Lee ◽  
Hayeong Jeong ◽  
Seung Beom Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

A Model for Low Temperature Crystallization of Silicate Dust in Protoplanetary Disks

2009 ◽  
Author(s):  
Tetsuo Yamamoto ◽  
Kyoko K. Tanaka ◽  
Tomonori Usuda ◽  
Motohide Tamura ◽  
Miki Ishii
Keyword(s):  
Low Temperature ◽  
Protoplanetary Disks ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

Processing of Stoichiometric and Ti Doped LiNbO3 Films with Preferred Orientation from Metal Alkoxides

1990 ◽  
Vol 200 ◽  
Author(s):  
S. Hirano ◽  
K. Kikuta ◽  
K. Kato
Keyword(s):  
Water Vapor ◽  
Low Temperature ◽  
Preferred Orientation ◽  
Metal Alkoxides ◽  
Sapphire Substrates ◽  
Vapor Stream ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

ABSTRACTStoichiometric and Ti-doped LiNbO3 films could be synthesized by the organometallic route. The films were epitaxially crystallized at temperatures around 400°C on sapphire substrates. The reaction control of alkoxides in solvent was found to be very critical for adjusting the stoichiometry and the low temperature crystallization, as well as the crystallization in water vapor stream.

Electron-Beam-Assisted Low-Temperature Crystallization of CuInSe$_text{2}$

2019 ◽  
Vol 69 (5) ◽  
pp. 458-461
Author(s):  
Maeng Jun KIM ◽  
Sung Youp LEE ◽  
Hyeong Rag LEE ◽  
Sang Ho SOHN*
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization
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