Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films

2001 ◽  
Vol 16 (7) ◽  
pp. 1883-1886 ◽  
Author(s):  
Kwang Soo Seol ◽  
Hironao Hiramatsu ◽  
Yoshimichi Ohki ◽  
In-Hoon Choi ◽  
Yong-Tea Kim
Keyword(s):  
Low Temperature ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Precursor Film ◽  
Excimer Laser Irradiation ◽  
Low Temperature Crystallization ◽  
Lower Temperature ◽  
Substrate Temperatures ◽  
Induced Crystallization ◽  
Temperature Crystallization

Transition of a SrBi2Ta2O9 precursor film from amorphous to crystalline was inducedby excimer laser irradiation. Both fluorite and perovskite crystalline structures in suchfilms were obtained by excimer laser irradiation at substrate temperatures between 200and 500 °C. Either an addition of excess bismuth in the precursor film or an increasein the substrate temperature enhanced the formation of the perovskite structure in theexcimer laser-induced annealing process, resulting in the perovskite crystalline phase ata relatively lower temperature of 500 °C. Such a low temperature is preferred whenSrBi2Ta2O9 is used in ferroelectric devices. The mechanism involved in thislaser-induced crystallization is also discussed.

scholarly journals The Low-Temperature Crystallization and Interface Characteristics of ZnInSnO/In Films Using a Bias-Crystallization Mechanism

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
K. J. Chen ◽  
F. Y. Hung ◽  
T. S. Lui ◽  
S. J. Chang ◽  
Z. S. Hu
Keyword(s):  
Low Temperature ◽  
Transparent Conductive Oxide ◽  
Crystallization Mechanism ◽  
Critical Factors ◽  
Interface Characteristics ◽  
Short Period ◽  
Higher Temperature ◽  
Low Temperature Crystallization ◽  
Lower Temperature ◽  
Temperature Crystallization

This study presents a successful bias crystallization mechanism (BCM) based on an indium/glass substrate and applies it to fabrication of ZnInSnO (ZITO) transparent conductive oxide (TCO) films. The effects of bias-crystallization on electrical and structural properties of ZITO/In structure indicate that the current-induced Joule heating and interface diffusion were critical factors for low-temperature crystallization. With biases of 4 V and 0.1 A, the resistivity of the ZITO film was reduced from3.08×10−4 Ω∗cm to6.3×10−5 Ω∗cm. This reduction was attributed to the bias-induced energy, which caused indium atoms to diffuse into the ZITO matrix. This effectuated crystallizing the amorphous ZITO (a-ZITO) matrix at a lower temperature (approximately170∘C) for a short period (≤20 min) during a bias test. The low-temperature BCM developed for this study obtained an efficient conventional annealed treatment (higher temperature), possessed energy-saving and speed advantages, and can be considered a candidate for application in photoelectric industries.

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