Influence of deposition pressure on p-type a-Si:H window layer doped by trimethylboron for a-Si:H superstrate solar cell in plasma enhanced chemical vapor deposition

ABSTRACTDeposition of n and p-type amorphous (a-Si:H) and microcrystalline (µc-Si:H) silicon thin films on polyethylene terephthalate (PET) at substrate temperatures (Tsub) of 100°C and 25°C (RT) prepared by hot-wire (HW) chemical vapor deposition and radio-frequency (RF) plasma-enhanced chemical vapor deposition is studied as a function of hydrogen dilution. Doping is achieved by addition of phosphine (ntype) and diborane (p-type) to the gas phase reactive mixture. At Tsub=100°C, n-type a-Si:H is obtained by HW with dark conductivity σd10−4 ω−1cm−1 and by RF with σd~10−3 ω−1cm−1. P-type a-Si:H is obtained by HW with σd=8×10−7 ω−1cm−1 and by RF with σd=6×10−7 ω−1cm−1. Decreasing the temperature of deposition to 25°C decreases the sd of RF n-type amorphous samples to 5×10−5 ω−1cm−1 but the σd of p-type samples remains unchanged. RT HW a-Si:H films show a decrease of sd both for ntype film (σd=4×10−6 ω−1cm−1) and p-type film (σd=1.2×10−7 ω−1cm−1). N-type µc-Si:H was obtained by HW with σd=7×10−2 ω−1cm−1 and by RF with σd>10−2 ω−1cm−1 at 100°C. Using the same Tsub, p-type µc-Si:H was deposited by HW and by RF with σd~0.5 ω−1cm−1. At RT, only p-type µc-Si:H films could be prepared using HW (σd~1 ω−1cm−1) and RF (σd=4×10−3 ω−1cm−1). The structural properties of the films were studied using Raman spectroscopy. The structural and transport properties were correlated.

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Boron Doped p-type Hydrogenated Nanocrystalline Silicon Films Grown by Hot Wire Chemical Vapor Deposition

10.1063/1.3643596 ◽

2011 ◽

Cited By ~ 1

Author(s):

M. R. Pramod ◽

M. M. Kamble ◽

V. S. Waman ◽

A. M. Funde ◽

V. G. Sathe ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Silicon Films ◽

Hot Wire ◽

Boron Doped ◽

P Type ◽

Nanocrystalline Silicon Films

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Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1415 ◽

2007 ◽

Vol 46 (4A) ◽

pp. 1415-1426 ◽

Cited By ~ 46

Author(s):

Shinsuke Miyajima ◽

Akira Yamada ◽

Makoto Konagai

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Low Temperatures ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Hot Wire ◽

Nanocrystalline Silicon Carbide ◽

P Type

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The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

International Journal of Modern Physics B ◽

10.1142/s021797921744101x ◽

2017 ◽

Vol 31 (16-19) ◽

pp. 1744101 ◽

Cited By ~ 1

Author(s):

Bitao Chen ◽

Yingke Zhang ◽

Qiuping Ouyang ◽

Fei Chen ◽

Xinghua Zhan ◽

...

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Solar Cell ◽

Vapor Deposition ◽

Gas Flow ◽

Silicon Solar Cell ◽

Crystalline Silicon ◽

Chemical Vapor ◽

Double Layers ◽

Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

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