An E-band Variable Gain Amplifier with 24 dB-control range and 80 to 100 GHz 1 dB bandwidth in SiGe BiCMOS technology

Frequenz ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Francesco Centurelli ◽  
Pietro Monsurrò ◽  
Giuseppe Scotti ◽  
Pasquale Tommasino ◽  
Alessandro Trifiletti
Keyword(s):  
Dynamic Range ◽  
Gain Control ◽  
Variable Gain Amplifier ◽  
Control Range ◽  
Variable Gain ◽  
Bicmos Technology ◽  
Commercial Technology ◽  
Sige Bicmos ◽  
Analysis Design

Abstract Analysis, design, and characterization of an E-band Variable Gain Amplifier (VGA) in SiGe BiCMOS commercial technology is presented. VGA topologies are compared in terms of their capability to contribute to receiver linearity and dynamic range. The proposed VGA is based on a Gilbert multiplier cell exploiting current cancellation to enhance control range and linearity. A 1 dB bandwidth ranging from 80 to 100 GHz, a 24 dB gain control range and a −11.5 dBm input 1 dB compression point have been measured.

scholarly journals Design of a 2 GHz Linear-in-dB Variable-Gain Amplifier with 80-dB Gain Range

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Zhengyu Sun ◽  
Yuepeng Yan
Keyword(s):  
Current Gain ◽  
Variable Gain Amplifier ◽  
Current Steering ◽  
Gain Bandwidth ◽  
Broad Bandwidth ◽  
Variable Gain ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
Steering Current

A broadband linear-in-dB variable-gain amplifier (VGA) circuit is implemented in 0.18 μm SiGe BiCMOS process. The VGA comprises two cascaded variable-gain core, in which a hybrid current-steering current gain cell is inserted in the Cherry-Hooper amplifier to maintain a broad bandwidth while covering a wide gain range. Postlayout simulation results confirm that the proposed circuit achieves a 2 GHz 3-dB bandwidth with wide linear-in-dB gain tuning range from −19 dB up to 61 dB. The amplifier offers a competitive gain bandwidth product of 2805 GHz at the maximum gain for a 110-GHz ftBiCMOS technology. The amplifier core consumes 31 mW from a 3.3 V supply and occupies active area of 280 μm by 140 μm.

scholarly journals Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS

Electronics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1058
Author(s):  
Samuel B.S. Lee ◽  
Hang Liu ◽  
Kiat Seng Yeo ◽  
Jer-Ming Chen ◽  
Xiaopeng Yu
Keyword(s):  
Dynamic Range ◽  
Third Order ◽  
Transimpedance Amplifiers ◽  
Variable Gain ◽  
Gain Variation ◽  
Bicmos Technology ◽  
Capacitive Load ◽  
Sige Bicmos ◽  
Amplifier Stage ◽  
On Chip

This paper presents two new inductorless differential variable-gain transimpedance amplifiers (DVGTIA) with voltage bias controlled variable gain designed in TowerJazz’s 0.18 µm SiGe BiCMOS technology (using CMOS transistors only). Both consist of a modified differential cross-coupled regulated cascode preamplifier stage and a cascaded amplifier stage with bias-controlled gain-variation and third-order interleaving feedback. The designs have wide measured transimpedance gain ranges of 24.5–60.6 dBΩ and 27.8–62.8 dBΩ with bandwidth above 6.42 GHz and 5.22 GHz for DVGTIA designs 1 and 2 respectively. The core power consumptions are 30.7 mW and 27.5 mW from a 1.8 V supply and the input referred noise currents are 10.3 pA/√Hz and 21.7 pA/√Hz. The DVGTIA designs 1 and 2 have a dynamic range of 40.4 µA to 3 mA and 76.8 µA to 2.7 mA making both suitable for real photodetectors with an on-chip photodetector capacitive load of 250 fF. Both designs are compact with a core area of 100 µm × 85 µm.

A WIDEBAND CMOS CASCADED VARIABLE GAIN AMPLIFIER USING UNEQUALLY DISTRIBUTED GAIN CONTROL FOR DVB-S.2 RECEIVER

2013 ◽  
Vol 22 (09) ◽  
pp. 1340008 ◽  
Author(s):  
HYEONSEOK HWANG ◽  
HOONKI KIM ◽  
CHAN-HUI JEONG ◽  
CHAN-KEUN KWON ◽  
SANGGEUN JEON ◽  
...  
Keyword(s):  
Dynamic Range ◽  
Noise Figure ◽  
Gain Control ◽  
Cmos Technology ◽  
Variable Gain Amplifier ◽  
Control Voltage ◽  
Current Generation ◽  
Fully Integrated ◽  
Variable Gain ◽  
Current Converter

A fully integrated three stage cascaded radio frequency variable gain amplifier (RFVGA) linearly controlled by exponential current generation circuit is presented. The gain control is unequally distributed in each stage for noise figure (NF) and linearity performance. The dB-linear gain control is realized using pseudo exponential current generated by CMOS current summing circuit with a voltage to current converter. The RFVGA has over 50 dB dynamic range. Gain changes from -38.5 to 16.8 dB according to control voltage that varies from 0.5 to 1.8 V. It operates at 0.95–2.15 GHz. This design is implemented in 0.18 μm CMOS technology.

A Wide Gain Control Range V-Band CMOS Variable-Gain Amplifier With Built-In Linearizer

2013 ◽  
Vol 61 (2) ◽  
pp. 902-913 ◽  
Author(s):  
Han-Chih Yeh ◽  
Sofiane Aloui ◽  
Chau-Ching Chiong ◽  
Huei Wang
Keyword(s):  
Gain Control ◽  
Variable Gain Amplifier ◽  
Control Range ◽  
Variable Gain ◽  
V Band
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