scholarly journals Progress in ZnO Acceptor Doping: What Is the Best Strategy?

2014 ◽  
Vol 2014 ◽  
pp. 1-15 ◽  
Author(s):  
Judith G. Reynolds ◽  
C. Lewis Reynolds
Keyword(s):  
Theoretical Calculations ◽  
Acceptor Doping ◽  
Deep Acceptor ◽  
Defect Complexes ◽  
Impurity Species ◽  
Dopant Impurity ◽  
P Type ◽  
Type Conduction ◽  
Oxygen Site ◽  
Zinc Site

This paper reviews the recent progress in acceptor doping of ZnO that has been achieved with a focus toward the optimum strategy. There are three main approaches for generating p-type ZnO: substitutional group IA elements on a zinc site, codoping of donors and acceptors, and substitution of group VA elements on an oxygen site. The relevant issues are whether there is sufficient incorporation of the appropriate dopant impurity species, does it reside on the appropriate lattice site, and lastly whether the acceptor ionization energy is sufficiently small to enable significant p-type conduction at room temperature. The potential of nitrogen doping and formation of the appropriate acceptor complexes is highlighted although theoretical calculations predict that nitrogen on an oxygen site is a deep acceptor. We show that an understanding of the growth and annealing steps to achieve the relevant acceptor defect complexes is crucial to meet requirements.

Electron Accumulation in AIGaSb/InAs Qw System, - Evidence for Coexistence of Deep Acceptor and Donor -

1992 ◽  
Vol 262 ◽  
Author(s):  
S. Ideshita ◽  
A. Furukawa ◽  
Y. Mochizuki ◽  
M. Mizuta
Keyword(s):  
Conduction Band ◽  
Acceptor Level ◽  
Quantum Level ◽  
Energy Position ◽  
Deep Acceptor ◽  
Electron Sources ◽  
Electron Accumulation ◽  
P Type ◽  
Type Conduction

ABSTRACTWe investigated the reason of the (imbalanced) accumulation of electrons in AIGaSb/lnAs/AIGaSb QW system in spite of the p-type conduction of undoped AIGaSb. It was found that the concentration of the accumulated electrons negligibly depended on the number of the interfaces, but increased linearly with the effective AlSb thickness. These results indicate that donor levels in AIGaSb are the dominant electron sources. We propose a model that the deep acceptors with larger concentration and donors coexist, and the electron accumulation depends on the energy position of the acceptor in AIGaSb with respect to the quantum level in the InAs well. Acceptor levels obtained experimentally are about 100 meV higher than the bottom of the InAs conduction band, and we succeeded in eliminating the electron accumulation by making the quantum level of the InAs well higher than this acceptor level. The origins of the donors and acceptors are also discussed.

Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 895-898 ◽  
Author(s):  
John Crofton ◽  
John R. Williams ◽  
A.V. Adedeji ◽  
James D. Scofield ◽  
S. Dhar ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Contact Resistance ◽  
Barrier Height ◽  
Ohmic Contacts ◽  
Doping Concentration ◽  
Theoretical Calculations ◽  
Specific Contact Resistance ◽  
Acceptor Doping ◽  
Specific Contact ◽  
P Type

Nickel ohmic contacts to p-type epitaxial and heavily implanted 4H-SiC are described. Room and elevated temperature results are presented. Elevated temperature measurements of specific contact resistance are compared to theoretical calculations. The calculations require the acceptor doping concentration and the contact’s barrier height. Epitaxial material has a known acceptor value thereby allowing the barrier height to be deduced by requiring agreement between the calculated and measured values of the contact resistance. Calculations of the contact resistance for implanted material use the barrier height from the epitaxial results along with a variable activated acceptor doping concentration which is adjusted to give agreement with measured room temperature specific contact resistances. Specific contact resistances as low as 7x10-6 ohm-cm2 fabricated on the Si face have been obtained to epitaxial 4H p-type material whereas contacts to implanted material result in much larger contact resistance values of 4x10-5 ohm-cm2. These results, when compared to theoretical calculations, indicate that activated acceptor doping concentrations in heavily implanted material are on the order of 2% of the implant concentration.

A Study of Arsenic Dopant Concentration and Activity as a Function of Growth Conditions in Polycrystalline MOCVD-Grown CdTe

2003 ◽  
Vol 763 ◽  
Author(s):  
Anne Stafford ◽  
Stuart J.C. Irvine ◽  
Ken Durose ◽  
Guillaume Zoppi
Keyword(s):  
Grain Size ◽  
Grain Boundaries ◽  
Dopant Concentration ◽  
Polycrystalline Material ◽  
Growth Conditions ◽  
Acceptor Doping ◽  
Intrinsic Defects ◽  
Defect Complexes ◽  
P Type

AbstractP-type CdTe can be produced via acceptor doping with As. However, as with other II/VI materials, the dopant behaviour is not simple, as there is the potential for compensating species to be formed from intrinsic defects and dopant-defect complexes. A further complication is introduced by the presence of grain boundaries in polycrystalline material. This study demonstrates that dopant concentration is a function of VI/II ratio in the growth ambient, and that resistivity is minimised for a dopant concentration of < 2 × 1018 at.cm-3. Grain size is also affected by the VI/II ratio, increasing slightly as the growth ambient becomes more Te-rich.

Effects of (P, N) dual acceptor doping on band gap and p-type conduction behavior of ZnO films

2013 ◽  
Vol 113 (13) ◽  
pp. 133101 ◽  
Author(s):  
Yingrui Sui ◽  
Bin Yao ◽  
Li Xiao ◽  
Guozhong Xing ◽  
Lili Yang ◽  
...  
Keyword(s):  
Band Gap ◽  
Zno Films ◽  
Acceptor Doping ◽  
Conduction Behavior ◽  
P Type ◽  
Type Conduction

Defect Complexes and Non-Equilibrium Processes Underlying the P-Type Doping of GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
Fernando A. Reboredo ◽  
Sokrates T. Pantelides
Keyword(s):  
High Temperature ◽  
Experimental Evidence ◽  
First Principles ◽  
Final Anneal ◽  
First Principles Calculations ◽  
Defect Complexes ◽  
Equilibrium Processes ◽  
Open Questions ◽  
High Temperature Anneal ◽  
P Type

AbstractIt is well known that hydrogen plays a key role in p-type doping of GaN. It is believed that H passivates substitutional Mg during growth by forming a Mgs-N-Hi complex; in subsequent annealing, H is removed, resulting in p-type doping. Several open questions have remained, however, such as experimental evidence for other complexes involving Mg and H and difficulties in accounting for the relatively high-temperature anneal needed to remove H. We present first principles calculations in terms of which we show that the doping process is in fact significantly more complex. In particular, interstitial Mg plays a major role in limiting p-type doping. Overall, several substitutional/interstitial complexes form and can bind H, with vibrational frequencies that account for hitherto unidentified observed lines. We predict that these defects, which limit doping efficiency, can be eliminated by annealing in an atmosphere of H and N prior to the final anneal that removes H.

Atomic nitrogen doping and p-type conduction in SnO2

2009 ◽  
Vol 95 (22) ◽  
pp. 222112 ◽  
Author(s):  
S. S. Pan ◽  
G. H. Li ◽  
L. B. Wang ◽  
Y. D. Shen ◽  
Y. Wang ◽  
...  
Keyword(s):  
Nitrogen Doping ◽  
Atomic Nitrogen ◽  
P Type ◽  
Type Conduction

Probe of the Band Structure of MBE Grown p-Type InMnAs at Ultrahigh Magnetic Fields

SPIN ◽  
2015 ◽  
Vol 05 (01) ◽  
pp. 1550002 ◽  
Author(s):  
Y. Sun ◽  
F. V. Kyrychenko ◽  
G. D. Sanders ◽  
C. J. Stanton ◽  
G. A. Khodaparast ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetic Fields ◽  
Band Structure ◽  
Heavy Hole ◽  
Theoretical Calculations ◽  
Interaction Strength ◽  
Golden Rule ◽  
Exchange Interactions ◽  
Landau Levels ◽  
P Type

We present a theoretical and experimental study on electronic and magneto-optical properties of p-type paramagnetic InMnAs dilute magnetic semiconductor (DMS) alloys in ultrahigh (> 100 T) external magnetic fields (B). Theoretical calculations are based on an 8-band Pidgeon–Brown model which is generalized to include the wavevector dependence of the electronic states along B as well as s–d and p–d exchange interactions with localized Mn d-electrons. The spin-dependent electronic structure as a function of Mn doping is computed and the dependence of the valence band structure on parameters such as the sp–d exchange interaction strength and effective masses in paramagnetic p- InMnAs alloys are examined. The cyclotron resonance (CR) and magneto-optical properties of InMnAs are calculated using Fermi's golden rule. Two strong CR peaks are observed in p-type InMnAs alloys which correspond to the transitions within either heavy-hole (HH) or light-hole (LH) Landau levels. Furthermore, we also observed strong resonance absorption for electron-active polarization which can occur in p-type semiconductors originating from transitions between the light and heavy hole Landau levels.

Solution-phase synthesized iron telluride nanostructures with controllable thermally triggered p-type to n-type transition

Nanoscale ◽  
2018 ◽  
Vol 10 (44) ◽  
pp. 20664-20670
Author(s):  
Wei Zheng ◽  
Sungbum Hong ◽  
Bokki Min ◽  
Yue Wu
Keyword(s):  
Solution Phase ◽  
Switching Behavior ◽  
Phase Synthesis ◽  
Type Transition ◽  
Solution Phase Synthesis ◽  
Iron Telluride ◽  
P Type ◽  
Thermally Triggered ◽  
Type Conduction

We report the solution-phase synthesis of iron telluride with controllable reversible switching behavior between p- and n-type conduction.

scholarly journals Design of high performance p-type sensitizers with pyridinium derivatives as the acceptor by theoretical calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (18) ◽  
pp. 10569-10576
Author(s):  
Zhi-Dan Sun ◽  
Jiang-Shan Zhao ◽  
Karuppasamy Ayyanar ◽  
Xue-Hai Ju ◽  
Qi-Ying Xia
Keyword(s):  
Electron Donor ◽  
High Performance ◽  
Theoretical Calculations ◽  
P Type

Based on triphenylamine as an electron donor and thiophene as a π-linker, Series P and A p-type sensitizers were designed to investigate the effects of the different acceptors on the properties of the sensitizers.

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