scholarly journals Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
I. Saurdi ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
M. Rusop

Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm), high average transmittance (96%) in visible region, and good resistivity7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

2015 ◽  
Vol 1109 ◽  
pp. 281-285
Author(s):  
I. Saurdi ◽  
Mohamad Hafiz Mamat ◽  
A.K. Shafura ◽  
M.F. Malik ◽  
A. Ishak ◽  
...  

The Sn-doped ZnO thin films were deposited on glass and ITO by sol gel Spin Coating technique. The Structural and electrical properties of Sn-doped ZnO thin films were studied and discussed. The Sn-doped ZnO thin film particle sizes were decreased whenever the doping concentration increased. Besides that, the resistivity 7.7 x 102 Ω.cm was obtained at 2 at.% Sn-doped thin films and aligned ZnO nanorod arrays with large surface area were grown on 2 at.% Sn-doped ZnO film. Therefore, dye sensitized solar cell at 2.0 at.% Sn-doped ZnO thin films with aligned ZnO Nanorod arrays have improved in the photocurrent density and conversion efficiency.


2013 ◽  
Vol 750-752 ◽  
pp. 253-258
Author(s):  
Li Rong Yang ◽  
Jun Cong Wei ◽  
Li Zhang ◽  
Hai Bin Chen

Well-aligned ZnO nanorod arrays on Chaleted Sol-Gel-Derived ZnO thin films was achieved at a temperature of 90°C by a surfactant-assisted soft chemical approach. The nanorod arrays were characterized by XRD, SEM, XPS, and UV-Vis absorbance spectra. The ZnO nanorod arrays are wurtzite crystal stuctures preferentially orienting in the direction of the c-axis and ZnO nanorods are grown verticallyon the substrate. The XPS analysis shows the Zn:O ratio of ZnO nanorod arrays near is 1:1. The UV-Vis absorbance spectra indicate that ZnO nanorod arrays have absorption of visible-light as well as ultraviolet-light. Therefore, the ZnO nanorods may be good candidates for visible-light photocatalysis materials from the viewpoint of practical applications.


2006 ◽  
Vol 110 (29) ◽  
pp. 14266-14272 ◽  
Author(s):  
Apurba Dev ◽  
Subhendu K. Panda ◽  
Soumitra Kar ◽  
Supriya Chakrabarti ◽  
Subhadra Chaudhuri

2014 ◽  
Vol 32 (4) ◽  
pp. 688-695 ◽  
Author(s):  
Munirah Munirah ◽  
Ziaul Khan ◽  
Mohd. Khan ◽  
Anver Aziz

AbstractThis paper describes the growth of Cd doped ZnO thin films on a glass substrate via sol-gel spin coating technique. The effect of Cd doping on ZnO thin films was investigated using X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence spectroscopy, I–V characteristics and field emission scanning electron microscopy (FESEM). X-ray diffraction patterns showed that the films have preferred orientation along (002) plane with hexagonal wurtzite structure. The average crystallite sizes decreased from 24 nm to 9 nm, upon increasing of Cd doping. The films transmittance was found to be very high (92 to 95 %) in the visible region of solar spectrum. The optical band gap of ZnO and Cd doped ZnO thin films was calculated using the transmittance spectra and was found to be in the range of 3.30 to 2.77 eV. On increasing Cd concentration in ZnO binary system, the absorption edge of the films showed the red shifting. Photoluminescence spectra of the films showed the characteristic band edge emission centred over 377 to 448 nm. Electrical characterization revealed that the films had semiconducting and light sensitive behaviour.


2021 ◽  
Vol 43 (3) ◽  
pp. 253-253
Author(s):  
Mehmet zkan Mehmet zkan ◽  
Sercen Sadik Erdem Sercen Sadik Erdem

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.


2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.


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