Silver Doped Zinc Oxide Thin Film Production by  Thermionic Vacuum Arc (TVA) Technique

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

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Studies on the Surface and Optical Properties of Ta-Doped ZnO Thin Films Deposited By Thermionic Vacuum Arc

10.21203/rs.3.rs-415794/v1 ◽

2021 ◽

Author(s):

Suat Pat ◽

Reza Mohammadigharehbagh ◽

Nihan Akkurt ◽

Şadan Korkmaz

Keyword(s):

Thin Film ◽

Thin Films ◽

Band Gap ◽

Thin Film Deposition ◽

Film Deposition ◽

Zno Thin Films ◽

Zno Thin Film ◽

Si Substrate ◽

Crystal Network ◽

Doped Zno

Abstract In this research, Ta doped ZnO thin films have been deposited onto glass and Si substrate by Thermionic vacuum arc (TVA) thin film deposition system. TVA is anodic plasma thin film deposition system and it is used to relatively high-quality thin films deposition. ZnO thin films have direct optical band gap of 3.37 eV. Tantalum is an efficient higher-valance element. Ta atom gives the more electrons compared to Zinc atom and their ionic radius are very close to each other, so substituted element does not bring into additional stress in crystal network. The deposited thin films were analyzed by field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy, atomic force microscopy, UV-Vis spectrophotometry and interferometer. To change the band gap properties of the ZnO thin film, Ta doping was used and band gap of Ta doped ZnO thin film was obtained 3.1 eV by Tauc’s method. The wt % ratios for Zn/Ta were calculated as 0.45 and 0.42 for the films deposited onto glass and Si substrate, respectively. Crystallite sizes of Ta doped ZnO thin film was decreased by changing substrate material. To the best of our knowledge, substituted Ta elements connected to the oxygen atom in crystal network and orthorhombic β′-Ta2O5 were detected in the all films structure. Their band gaps of the β′-Ta2O5 were measured as 2.70 eV and 2.60 eV for Ta-doped ZnO thin films deposited onto glass and Si substrate, respectively. Up to day, the band gap of the β′-Ta2O5 was calculated by density function theory. According to results, β′-Ta2O5 structure was found as embedded from in the ZnO crystal network.

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Two-dimensional BN-doped ZnO thin-film deposition by a thermionic vacuum arc system

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-03258-1 ◽

2020 ◽

Vol 31 (9) ◽

pp. 6948-6955

Author(s):

Mustafa Özgür ◽

Suat Pat ◽

Reza Mohammadigharehbagh ◽

Uğur Demirkol ◽

Nihan Akkurt ◽

...

Keyword(s):

Thin Film ◽

Thin Film Deposition ◽

Film Deposition ◽

Vacuum Arc ◽

Zno Thin Film ◽

Two Dimensional ◽

Doped Zno ◽

Thermionic Vacuum Arc

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The electrical, elemental, optical, and surface properties of Si-doped ZnO thin films prepared by thermionic vacuum arc

Materials Research Express ◽

10.1088/2053-1591/aa7a6b ◽

2017 ◽

Vol 4 (9) ◽

pp. 096404 ◽

Cited By ~ 9

Author(s):

Reza Mohammadigharehbagh ◽

Soner Özen ◽

Hafizittin Hakan Yudar ◽

Suat Pat ◽

Şadan Korkmaz

Keyword(s):

Thin Films ◽

Surface Properties ◽

Zno Thin Films ◽

Vacuum Arc ◽

Si Doped ◽

Doped Zno ◽

Thermionic Vacuum Arc

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Al doped ZnO thin film deposition by thermionic vacuum arc

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-018-0329-x ◽

2018 ◽

Vol 30 (1) ◽

pp. 624-630 ◽

Cited By ~ 2

Author(s):

Mustafa Özgür ◽

Suat Pat ◽

Reza Mohammadigharehbagh ◽

Caner Musaoğlu ◽

Uğur Demirkol ◽

...

Keyword(s):

Thin Film ◽

Thin Film Deposition ◽

Film Deposition ◽

Vacuum Arc ◽

Zno Thin Film ◽

Doped Zno ◽

Thermionic Vacuum Arc

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Sn doped ZnO thin film deposition using thermionic vacuum arc technique

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2018.10.020 ◽

2019 ◽

Vol 774 ◽

pp. 1017-1023 ◽

Cited By ~ 8

Author(s):

Mustafa Özgür ◽

Suat Pat ◽

Reza Mohammadigharehbagh ◽

Caner Musaoğlu ◽

Uğur Demirkol ◽

...

Keyword(s):

Thin Film ◽

Thin Film Deposition ◽

Film Deposition ◽

Vacuum Arc ◽

Zno Thin Film ◽

Doped Zno ◽

Thermionic Vacuum Arc

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Structural Properties of Sn-Doped ZnO Thin Films Deposited on Glass Substrate Using Sol-Gel Immersion Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1109.568 ◽

2015 ◽

Vol 1109 ◽

pp. 568-571

Author(s):

Shafura Karim ◽

Uzer Mohd Noor ◽

M.H. Mamat ◽

Shuhaimi Abu Bakar ◽

Salman A.H. Alrokayan ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Scanning Electron Microscopy ◽

Zinc Oxide ◽

Glass Substrate ◽

Sol Gel ◽

Zno Thin Films ◽

Immersion Method ◽

Doped Zno ◽

Scanning Electron

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 1.0 at.%, 2.0 at.% and 3.0 at.%. The synthesized samples were characterized by Field Emission Scanning Electron Microscopy (FESEM).

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