Electrical Properties of Polytypic Mg Doped GaAs Nanowires

The electrical transport properties of individual Mg doped GaAs nanowires are investigated. It is shown that Mg can be successfully used as a nontoxic p-type dopant in GaAs nanowires. The doping levels, expanding over two orders of magnitude, and free holes mobility in the NW were obtained by the analysis of field effect transistors transfer curves. The temperature dependence of the electrical resistivity above room temperature shows that the polytypic structure of the NWs strongly modifies the NWs charge transport parameters, like the resistivity activation energy and holes mobility. At lower temperatures the NWs exhibit variable range hopping conduction. Both Mott and Efros-Shklovskii variable range hopping mechanisms were clearly identified in the nanowires.

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A temperature-dependent pre-exponential factor in Efros–Shklovskii variable range hopping conduction in p-type CuInTe2

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(02)01023-8 ◽

2003 ◽

Vol 18 (1-3) ◽

pp. 292-293 ◽

Cited By ~ 4

Author(s):

C. Quiroga ◽

R. Oentrich ◽

I. Bonalde ◽

E. Medina D. ◽

S.M. Wasim ◽

...

Keyword(s):

Hopping Conduction ◽

Variable Range Hopping ◽

Temperature Dependent ◽

Exponential Factor ◽

Variable Range ◽

P Type ◽

Variable Range Hopping Conduction

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High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.283 ◽

2016 ◽

Vol 858 ◽

pp. 283-286 ◽

Cited By ~ 3

Author(s):

Antonella Parisini ◽

Andrea Parisini ◽

Marco Gorni ◽

Roberta Nipoti

Keyword(s):

Electrical Transport ◽

Room Temperature ◽

Hole Transport ◽

Variable Range Hopping ◽

Electrical Transport Properties ◽

Hopping Transport ◽

Variable Range ◽

Transmission Electron ◽

Temperature Variable ◽

Post Implantation

In this work, we confirm and extend the results of a previous study where a variable range hopping transport through localized impurity states has been found to dominate the electrical transport properties of 3×1020 cm-3 and 5×1020 cm-3 Al+ implanted 4H-SiC layers after 1950-2000 °C post implantation annealing. In this study, samples with longer annealing times have been taken into account. The temperature dependence of these sample conductivity follows a variable range hopping law, consistent with a nearly two-dimensional hopping transport of non-interacting carriers that in the highest doped samples, persists up to around room temperature. This result indicates that the hole transport becomes strongly anisotropic on increasing the doping level. At the origin of this unusual electrical behavior, may be the presence of basal plane stacking faults, actually observed by transmission electron microscopy in one of the 5×1020 cm-3 samples

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Electrical Transport Properties ofNi95Ti5Catalyzed Multi wall Carbon Nanotubes Film

Journal of Nanomaterials ◽

10.1155/2009/429867 ◽

2009 ◽

Vol 2009 ◽

pp. 1-8 ◽

Cited By ~ 2

Author(s):

Zishan Husain Khan ◽

Numan Salah ◽

Sami Habib

Keyword(s):

Carbon Nanotubes ◽

Temperature Region ◽

Electrical Transport ◽

Conduction Mechanism ◽

Variable Range Hopping ◽

Electrical Transport Properties ◽

Multi Wall Carbon Nanotubes ◽

Variable Range ◽

Temperature Range ◽

Dimensional Variable

Carbon nanotubes (CNTs) can be understood as one or more graphite sheets rolled up into a seamless cylinder. CNTs have gained much attention and scientific interest due to their unique properties and potential applications since their discovery in 1991. In the present work, we have deposited Ni95Ti5 film using thermal deposition method. Finally, theNi95Ti5catalyzed multi wall carbon nanotubes (MWNTs) are grown on silicon substrate using low pressure chemical vapor deposition (LPCVD) method and the electrical transport properties of this MWNTs film are studied over a temperature range (284–4K) to explain the conduction mechanism. We have suggested two types of conduction mechanism for the entire temperature range. For the temperature region (284–220K), the conduction is due to thermally activated process, whereas the conduction takes place via variable range hopping (VRH) for the temperature range of (220–4K). The VRH mechanism changes from three dimensions to two dimensions as we move down to the temperature below 50K. Therefore, the data for the temperature region (220–50K) is plotted for three dimensional variable range hopping (3D VRH) model and the two dimensional variable range hopping (2D VRH) for lower temperature range of (50–4K). These VRH models give a good fit to the experimental data. Using these models, we have calculated various interesting electrical parameters such as activation energy, density of states, hopping distance and hopping energy.

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