Study on the Electrical Injection Regeneration of Industrialized B-Doped Czochralski Silicon PERC Solar Cells

In this paper, 156 mm×156 mm boron-doped Czochralski silicon (Cz-Si) wafers were fabricated into PERC solar cells by using the industrial standard process; then, the as-prepared PERC solar cells were treated by the regeneration process using electrical injection and heating and the effects of different regeneration processes (temperature, time, and injection current) on the anti-light-induced degradation (anti-LID) performance of the PERC solar cells were investigated. The results show that under the condition of 10 A injection current and 30 min processing time, the optimal processing temperature is about 180°C for PERC solar cells to obtain the best anti-LID performance. Under the conditions of a temperature of 180°C, an injection current of 10 A, and a processing time of 0-30 min, the anti-LID performance of the PERC solar cells is enhanced with the increase in the processing time. When the processing time is 20 and 30 min, the efficiency, the short-circuit current, and the open-circuit voltage of the processed PERC solar cells are slightly higher than the initial values before the regeneration and remain stable in the subsequent 12-hour light degradation process at 45°C and 1-sun illumination. At a temperature of 180°C and a processing time of 30 min, the injection current of 6 A is enough to obtain a good regeneration effect, but the optimal injection current is around 10 A.

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CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽

10.3390/en14061684 ◽

2021 ◽

Vol 14 (6) ◽

pp. 1684

Author(s):

Alessandro Romeo ◽

Elisa Artegiani

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Early Years ◽

Solar Cell Efficiency ◽

Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

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GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽

10.3390/cryst11070726 ◽

2021 ◽

Vol 11 (7) ◽

pp. 726

Author(s):

Ray-Hua Horng ◽

Yu-Cheng Kao ◽

Apoorva Sood ◽

Po-Liang Liu ◽

Wei-Cheng Wang ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Low Temperature ◽

Triple Junction ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Metal Line ◽

Solar Simulator ◽

Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

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Ultrathin Cu(In,Ga)Se2 Solar Cells with Ag/AlOx Passivating Back Reflector

Energies ◽

10.3390/en14144268 ◽

2021 ◽

Vol 14 (14) ◽

pp. 4268

Author(s):

Jessica de Wild ◽

Gizem Birant ◽

Guy Brammertz ◽

Marc Meuris ◽

Jef Poortmans ◽

...

Keyword(s):

Surface Roughness ◽

Solar Cells ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Electron Microscopic ◽

Current Increase ◽

Time Resolved ◽

Cigs Solar Cells

Ultrathin Cu(In,Ga)Se2 (CIGS) absorber layers of 550 nm were grown on Ag/AlOx stacks. The addition of the stack resulted in solar cells with improved fill factor, open circuit voltage and short circuit current density. The efficiency was increased from 7% to almost 12%. Photoluminescence (PL) and time resolved PL were improved, which was attributed to the passivating properties of AlOx. A current increase of almost 2 mA/cm2 was measured, due to increased light scattering and surface roughness. With time of flight—secondary ion mass spectroscopy, the elemental profiles were measured. It was found that the Ag is incorporated through the whole CIGS layer. Secondary electron microscopic images of the Mo back revealed residuals of the Ag/AlOx stack, which was confirmed by energy dispersive X-ray spectroscopy measurements. It is assumed to induce the increased surface roughness and scattering properties. At the front, large stains are visible for the cells with the Ag/AlOx back contact. An ammonia sulfide etching step was therefore applied on the bare absorber improving the efficiency further to 11.7%. It shows the potential of utilizing an Ag/AlOx stack at the back to improve both electrical and optical properties of ultrathin CIGS solar cells.

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Direct AFM-based nanoscale mapping and tomography of open-circuit voltages for photovoltaics

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.9.171 ◽

2018 ◽

Vol 9 ◽

pp. 1802-1808 ◽

Cited By ~ 6

Author(s):

Katherine Atamanuk ◽

Justin Luria ◽

Bryan D Huey

Keyword(s):

Solar Cells ◽

Open Circuit Voltage ◽

Short Circuit ◽

Photovoltaic Performance ◽

Three Dimensional ◽

Short Circuit Current ◽

Open Circuit ◽

Photovoltaic Properties ◽

Order Of Magnitude ◽

Individual Grains

The nanoscale optoelectronic properties of materials can be especially important for polycrystalline photovoltaics including many sensor and solar cell designs. For thin film solar cells such as CdTe, the open-circuit voltage and short-circuit current are especially critical performance indicators, often varying between and even within individual grains. A new method for directly mapping the open-circuit voltage leverages photo-conducting AFM, along with an additional proportional-integral-derivative feedback loop configured to maintain open-circuit conditions while scanning. Alternating with short-circuit current mapping efficiently provides complementary insight into the highly microstructurally sensitive local and ensemble photovoltaic performance. Furthermore, direct open-circuit voltage mapping is compatible with tomographic AFM, which additionally leverages gradual nanoscale milling by the AFM probe essentially for serial sectioning. The two-dimensional and three-dimensional results for CdTe solar cells during in situ illumination reveal local to mesoscale contributions to PV performance based on the order of magnitude variations in photovoltaic properties with distinct grains, at grain boundaries, and for sub-granular planar defects.

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Effects of Different Doping Ratio of Cu Doped CdS on QDSCs Performance

Journal of Nanomaterials ◽

10.1155/2015/498950 ◽

2015 ◽

Vol 2015 ◽

pp. 1-4

Author(s):

Xiaojun Zhu ◽

Xiaoping Zou ◽

Hongquan Zhou

Keyword(s):

Solar Cells ◽

Quantum Dot ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Photoelectric Conversion Efficiency ◽

Photoelectric Conversion ◽

Sensitized Solar Cells ◽

Doping Ratio

We use the successive ionic layer adsorption and reaction (SILAR) method for the preparation of quantum dot sensitized solar cells, to improve the performance of solar cells by doping quantum dots. We tested the UV-Vis absorption spectrum of undoped CdS QDSCs and Cu doped CdS QDSCs with different doping ratios. The doping ratios of copper were 1 : 100, 1 : 500, and 1 : 1000, respectively. The experimental results show that, under the same SILAR cycle number, Cu doped CdS quantum dot sensitized solar cells have higher open circuit voltage, short circuit current density photoelectric conversion efficiency than undoped CdS quantum dots sensitized solar cells. Refinement of Cu doping ratio are 1 : 10, 1 : 100, 1 : 200, 1 : 500, and 1 : 1000. When the proportion of Cu and CdS is 1 : 10, all the parameters of the QDSCs reach the minimum value, and, with the decrease of the proportion, the short circuit current density, open circuit voltage, and the photoelectric conversion efficiency are all increased. When proportion is 1 : 500, all parameters reach the maximum values. While with further reduction of the doping ratio of Cu, the parameters of QDSCs have a decline tendency. The results showed that, in a certain range, the lower the doping ratio of Cu, the better the performance of quantum dot sensitized solar cell.

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Study of Photoelectrochemical Solar Cell Using WSe2 Crystal

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.665.330 ◽

2013 ◽

Vol 665 ◽

pp. 330-335 ◽

Cited By ~ 1

Author(s):

Ripal Parmar ◽

Dipak Sahay ◽

R.J. Pathak ◽

R.K. Shah

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Fill Factor ◽

Short Circuit ◽

Short Circuit Current ◽

Electrical Energy ◽

Open Circuit ◽

Cell Parameters ◽

Photoelectrochemical Solar Cell ◽

Photoelectrochemical Solar Cells

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.

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Solar Cell Contacts Using Nano-Sized Dispersions

MRS Proceedings ◽

10.1557/proc-581-157 ◽

1999 ◽

Vol 581 ◽

Author(s):

Doug Schulz ◽

R. Ribelin ◽

X. Wu ◽

K.M. Jones ◽

R.J. Matson ◽

...

Keyword(s):

Solar Cells ◽

Spray Deposition ◽

Short Circuit ◽

Short Circuit Current ◽

Cdte Layer ◽

Open Circuit ◽

Alloy Formation ◽

Current Densities ◽

P Type ◽

Open Circuit Voltages

ABSTRACTNano-sized dispersions have been employed as precursor inks for the spray deposition of contacts to both Si and CdTe materials. In the case of Si, nano-sized Al particles (nano-Al) were dispersed and spray deposited onto p-type Si. Annealing above the eutectic temperature causes alloy formation yielding a p+ layer with p ∼ 10−4 Ω•cm. For CdTe, nano-sized Te particles (nano-Te) were dispersed and sprayed onto CdTe/CdS/SnO2/glass heterostructures. Contact to the CdTe layer occurred during a 30 min anneal in He (T = 215 to 255 °C). These solar cells were finished by spin-coating the Te layer with Ag paint and subsequently annealing in air (100 °C / 1 h). This approach produces solar cells with open circuit voltages (Voc) from 720 to 800 mV, short circuit current densities (Jsc) from 18 to 20 mA/cm2 and efficiencies up to 10.3%. The performance of these cells was similar to those produced using the standard NREL contact.

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SCAPS Simulation on P3HT:Graphene Nanocomposites Based Bulk-Heterojunction Organic Solar Cells

International Journal of Electrical & Electronic Systems Research (IEESR) ◽

10.24191/ieesr.v9i1.950 ◽

2019 ◽

Vol 9 (1) ◽

pp. 28

Author(s):

Nur Shakina Mohd Shariff ◽

Puteri Sarah Mohamad Saad ◽

Mohamad Rusop Mahmood

Keyword(s):

Solar Cells ◽

Organic Solar Cells ◽

Fill Factor ◽

Bulk Heterojunction ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Simulation Software ◽

Capacitance Voltage

There has been an increasing interest towards organic solar cells after the discovery of conjugated polymer and bulk-heterojunction concept. Eventhough organic solar cells are less expensive than inorganic solar cells but the power conversion energy is still considered low. The main objective of this research is to investigate the effect of the P3HT’s thickness and concentration towards the efficiency of the P3HT:Graphene solar cells. A simulation software that is specialize for photovoltaic called SCAPS is used in this research to simulate the effect on the solar cells. The solar cell’s structure will be drawn inside the simulation and the parameters for each layers is inserted. The result such as the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), efficiency (η), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristic will be calculated by the software and all the results will be put into one graph.

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Prunus domestica dye extraction for fabrication of zinc oxide based dye-sensitized solar cells

BIBECHANA ◽

10.3126/bibechana.v13i0.13341 ◽

2015 ◽

Vol 13 ◽

pp. 23-28

Author(s):

Leela Pradhan Joshi

Keyword(s):

Zinc Oxide ◽

Solar Cells ◽

Short Circuit ◽

Dye Sensitized Solar Cells ◽

Short Circuit Current ◽

Zinc Nitrate ◽

Open Circuit ◽

Dye Sensitized ◽

Dye Extraction ◽

Sensitized Solar Cells

Aluminium doped Zinc Oxide (AZO) seed layers were deposited on Fluorine doped Tin Oxide (FTO) substrates using a spin coating technique. These were then immersed in growth solutions of zinc nitrate, hexamethylenetetramine and distilled water to develop nanoplates of Zinc Oxide (ZnO). The nanostructures of ZnO grown on FTO were studied using x-ray diffraction techniques. Dye-sensitized solar cells (DSSC) were fabricated using two prepared electrodes, one of dye-loaded zinc oxide and another that was platinum coated. The electrolyte used was potassium iodide iodine solution. The performance of the assembled DSCCs was tested by drawing an IV curve. The results showed that the short circuit current and open circuit voltages were about 10 microamperes and 270 millivolts respectively.BIBECHANA 13 (2016) 23-28

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The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells

Microelectronics International ◽

10.1108/mi-04-2019-0019 ◽

2019 ◽

Vol 36 (3) ◽

pp. 90-94

Author(s):

Barbara Swatowska ◽

Piotr Panek ◽

Dagmara Michoń ◽

Aleksandra Drygała

Keyword(s):

Solar Cells ◽

Contact Resistance ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Multicrystalline Silicon ◽

Silicon Solar Cells ◽

Electrical Parameters ◽

Content Type ◽

Diffusion Parameters

Purpose The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance. Design/methodology/approach By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced – 22 and 48 Ω/□. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (Uoc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm2 area and 240 µm thickness were investigated. Findings Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (Rsheet) of 45-48 Ω/□. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, Uoc between 585 and 612 mV, short circuit current (Isc) between 724 and 820 mA. Originality/value Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 Ω/□ emitter resistance have better parameters than cells with Rsheet of 22 Ω/□. The contact resistance is the highest for mc-Si with Rsheet of 48 Ω/□ and reaches the value 3.8 Ωcm.

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