scholarly journals The influence of KrF excimer laser irradiation on the surface of collagen and collagen/PVP films

2006 ◽  
Vol 2006 ◽  
pp. 1-7 ◽  
Author(s):  
M. Wisniewski ◽  
A. Sionkowska ◽  
H. Kaczmarek ◽  
J. Skopinska ◽  
S. Lazare ◽  
...  

The surface properties of collagen and collagen/poly(vinyl pyrrolidone) (PVP) films after KrF excimer laser irradiation (λ=248nm) were investigated by means of the technique of scanning electron microscopy (SEM) and optical microscopy (OM). The laser irradiation of the used specimens caused an expansion of materials above their surface with pronounced sings of its melting. The height of the ablated volume in a case of collagen film at a fluence of1.1J/cm2was approximately 5μm. A white damage appears on the treated surfaces at a threshold of0.5J/cm2with a single pulse and becomes more visible for a higher fluence. It is also noteworthy that along with increasing fluences (beginning from the fluence of1.7J/cm2), the characteristic filaments at the spot edges are observed. The local heat and pressure generated by the laser radiation were able to induce bubble formation on the surface. Further bubble colliding and bursting produce a three-dimensional polymer “microfoam” structure with interconnected pores. These results can be of interest for some new applications.

1999 ◽  
Vol 107 (1252) ◽  
pp. 1229-1231 ◽  
Author(s):  
Jong-Won YOON ◽  
Katsuki HIGAKI ◽  
Masaru MIYAYAMA ◽  
Tetsuichi KUDO

1990 ◽  
Vol 5 (12) ◽  
pp. 2835-2840 ◽  
Author(s):  
Koji Sugioka ◽  
Hideo Tashiro ◽  
Koichi Toyoda ◽  
Hideyuki Murakami ◽  
Hiroshi Takai

The chemical stability of the surface of stainless steel (SUS) 304 in acid immersion tests is greatly improved by the laser implant-deposition (LID) process, i.e., the simultaneous deposition and incorporation of silicon by KrF excimer laser irradiation. The etching depths of the treated samples in 1.32 N HCl solution are substantially zero at the laser irradiation conditions of more than 40 pulses and of more than 400 mJ/cm2 at the surface. By the quantitative verification of cathodic polarization in 1 N H2SO4, the highest polarization resistance is estimated to be 26.7 times that of the nontreated sample.


1994 ◽  
Vol 345 ◽  
Author(s):  
Yasutaka Uchida ◽  
Masakiyo Matsumura

AbstractXPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.


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