Role of Interfacial Nitrogen on the High-Field Reliability of NO-Grown SiO2/6H-SiC Metal-Oxide-Semiconductor Devices: An X-Ray Photoelectron Spectroscopy Study

Advanced Science Engineering and Medicine ◽

10.1166/asem.2014.1608 ◽

2014 ◽

Vol 6 (9) ◽

pp. 1020-1023

Author(s):

C. Chakraborty ◽

C. Bose ◽

S. Chakraborty ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Spectroscopy Study ◽

X Ray ◽

Field Reliability

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Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al2O3/Si using hard x-ray photoelectron spectroscopy

Applied Physics Letters ◽

10.1063/1.4919448 ◽

2015 ◽

Vol 106 (17) ◽

pp. 171601 ◽

Author(s):

J. R. Church ◽

C. Weiland ◽

R. L. Opila

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Interface Charges

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Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

Surface and Interface Analysis ◽

10.1002/sia.3154 ◽

2010 ◽

Vol 42 (2) ◽

pp. 70-76 ◽

Author(s):

M. Yoshitake ◽

K. Ohmori ◽

T. Chikyow

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

X Ray ◽

Interface Characterization ◽

Metal Oxide Semiconductor Structure

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Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4816090 ◽

2013 ◽

Vol 114 (3) ◽

pp. 034505 ◽

Author(s):

R. K. Pandey ◽

Rajesh Sathiyanarayanan ◽

Unoh Kwon ◽

Vijay Narayanan ◽

K. V. R. M. Murali

Keyword(s):

Metal Oxide ◽

Work Function ◽

Point Defects ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effective Work ◽

Effective Work Function

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Latent Damage Generation in Thin Oxides of Metal-Oxide-Semiconductor Devices under High-Field Impulse Stress and Damage Characterization Using Low-Frequency Noise Measurement

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.6770 ◽

2001 ◽

Vol 40 (Part 1, No. 12) ◽

pp. 6770-6777 ◽

Author(s):

Wai Kin Chim ◽

Peng Soon Lim

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Noise Measurement ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Damage Characterization

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Fabrication of back-gated complementary metal-oxide semiconductor devices using mixed and matched optical and x-ray lithographies

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588636 ◽

1996 ◽

Vol 14 (6) ◽

pp. 4024

Author(s):

Isabel Y. Yang

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Application of synchrotron x-ray lithography to fabricate fully scaled 0.5 μm complementary metal–oxide semiconductor devices and circuits

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584477 ◽

1989 ◽

Vol 7 (6) ◽

pp. 1662 ◽

Author(s):

L. K. Wang

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures

Physical Review B ◽

10.1103/physrevb.88.045322 ◽

2013 ◽

Vol 88 (4) ◽

Author(s):

Lee A. Walsh ◽

Greg Hughes ◽

Jun Lin ◽

Paul K. Hurley ◽

Terrance P. O’Regan ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Photoelectron Spectroscopy ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Semiconductor Structures ◽

Characterization Study

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X-ray photoelectron spectroscopy and diffraction investigation of a metal–oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111)

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2015.02.001 ◽

2015 ◽

Vol 416 ◽

pp. 118-125 ◽

Author(s):

D. Ferrah ◽

M. El Kazzi ◽

G. Niu ◽

C. Botella ◽

J. Penuelas ◽

...

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Semiconductor Heterostructure

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Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

Journal of Materials Chemistry C ◽

10.1039/c8tc02935k ◽

2018 ◽

Vol 6 (44) ◽

pp. 12079-12085 ◽

Author(s):

Anna Regoutz ◽

Gregor Pobegen ◽

Thomas Aichinger

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Interface Chemistry ◽

X Ray ◽

Immense Potential

SiC has immense potential as the semiconductor for future high power metal–oxide–semiconductor devices. X-ray photoelectron spectroscopy (XPS) to systematically study the 4H-SiC/SiO2 interface after high temperature nitridation treatments in a variety of atmospheres.

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A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures

Applied Physics Letters ◽

10.1063/1.4770380 ◽

2012 ◽

Vol 101 (24) ◽

pp. 241602 ◽

Author(s):

Lee A. Walsh ◽

Greg Hughes ◽

Paul K. Hurley ◽

Jun Lin ◽

Joseph C. Woicik

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Semiconductor Structures

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