Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

Journal of Materials Chemistry C ◽

10.1039/c8tc02935k ◽

2018 ◽

Vol 6 (44) ◽

pp. 12079-12085 ◽

Author(s):

Anna Regoutz ◽

Gregor Pobegen ◽

Thomas Aichinger

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Interface Chemistry ◽

X Ray ◽

Immense Potential

SiC has immense potential as the semiconductor for future high power metal–oxide–semiconductor devices. X-ray photoelectron spectroscopy (XPS) to systematically study the 4H-SiC/SiO2 interface after high temperature nitridation treatments in a variety of atmospheres.

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Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

Surface and Interface Analysis ◽

10.1002/sia.3154 ◽

2010 ◽

Vol 42 (2) ◽

pp. 70-76 ◽

Author(s):

M. Yoshitake ◽

K. Ohmori ◽

T. Chikyow

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

X Ray ◽

Interface Characterization ◽

Metal Oxide Semiconductor Structure

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Role of Interfacial Nitrogen on the High-Field Reliability of NO-Grown SiO2/6H-SiC Metal-Oxide-Semiconductor Devices: An X-Ray Photoelectron Spectroscopy Study

Advanced Science Engineering and Medicine ◽

10.1166/asem.2014.1608 ◽

2014 ◽

Vol 6 (9) ◽

pp. 1020-1023

Author(s):

C. Chakraborty ◽

C. Bose ◽

S. Chakraborty ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Spectroscopy Study ◽

X Ray ◽

Field Reliability

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Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al2O3/Si using hard x-ray photoelectron spectroscopy

Applied Physics Letters ◽

10.1063/1.4919448 ◽

2015 ◽

Vol 106 (17) ◽

pp. 171601 ◽

Author(s):

J. R. Church ◽

C. Weiland ◽

R. L. Opila

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Interface Charges

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Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures

Physical Review B ◽

10.1103/physrevb.88.045322 ◽

2013 ◽

Vol 88 (4) ◽

Author(s):

Lee A. Walsh ◽

Greg Hughes ◽

Jun Lin ◽

Paul K. Hurley ◽

Terrance P. O’Regan ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Photoelectron Spectroscopy ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Semiconductor Structures ◽

Characterization Study

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High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices

Applied Physics Express ◽

10.35848/1882-0786/ac23e8 ◽

2021 ◽

Author(s):

Takuji Hosoi ◽

Momoe Ohsako ◽

Takayoshi SHIMURA ◽

Heiji WATANABE

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

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X-ray photoelectron spectroscopy and diffraction investigation of a metal–oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111)

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2015.02.001 ◽

2015 ◽

Vol 416 ◽

pp. 118-125 ◽

Author(s):

D. Ferrah ◽

M. El Kazzi ◽

G. Niu ◽

C. Botella ◽

J. Penuelas ◽

...

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Semiconductor Heterostructure

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A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures

Applied Physics Letters ◽

10.1063/1.4770380 ◽

2012 ◽

Vol 101 (24) ◽

pp. 241602 ◽

Author(s):

Lee A. Walsh ◽

Greg Hughes ◽

Paul K. Hurley ◽

Jun Lin ◽

Joseph C. Woicik

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Semiconductor Structures

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Thermal stability of the HfO2∕SiO2 interface for sub-0.1μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy

Journal of Applied Physics ◽

10.1063/1.1809769 ◽

2004 ◽

Vol 96 (11) ◽

pp. 6362-6369 ◽

Author(s):

N. Barrett ◽

O. Renault ◽

J.-F. Damlencourt ◽

F. Martin

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Valence Band ◽

Photoelectron Spectroscopy ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Thermal Stability Of

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Electrically induced change in HfO2/1-monolayer TiO2/SiO2 metal-oxide-semiconductor stacks: capacitance-voltage and hard x-ray photoelectron spectroscopy studies

Applied Physics Express ◽

10.35848/1882-0786/ac0b08 ◽

2021 ◽

Author(s):

Noriyuki Miyata ◽

Kyoko Sumita ◽

Akira Yasui ◽

Ryousuke Sano ◽

Reito Wada ◽

...

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Capacitance Voltage ◽

Spectroscopy Studies

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Improvement on the Electrical Characteristics of HfO[sub x]N[sub y]-Gated Metal-Oxide-Semiconductor Devices by High-Temperature Annealing

Electrochemical and Solid-State Letters ◽

10.1149/1.2337858 ◽

2006 ◽

Vol 9 (11) ◽

pp. F80 ◽

Author(s):

Chin-Lung Cheng ◽

Kuei-Shu Chang-Liao ◽

Tien-Ko Wang

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

High Temperature Annealing

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