Analytical Model for Double-Gate Tunneling Field-Effect Transistor (DG-TFET) Using Carrier Concentration Approach

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2013.2829 ◽

2013 ◽

Vol 10 (5) ◽

pp. 1202-1208 ◽

Author(s):

Rakhi Narang ◽

Manoj Saxena ◽

R. S. Gupta ◽

Mridula Gupta

Keyword(s):

Carrier Concentration ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

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Study on the novel double-gate tunneling field-effect transistor with InAs source

Proceedings of the 2015 4th International Conference on Computer, Mechatronics, Control and Electronic Engineering ◽

10.2991/iccmcee-15.2015.280 ◽

2015 ◽

Author(s):

YueHua Dai ◽

Ning Li ◽

Zhen Chen ◽

Bo Jin

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

The Novel ◽

Effect Transistor ◽

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An empirical model for static I–V characteristics of double gate tunneling field effect transistor

2013 IEEE 10th International Conference on ASIC ◽

10.1109/asicon.2013.6811948 ◽

2013 ◽

Author(s):

D. M. Huang ◽

C. J. Yao ◽

D. H. Shi ◽

M. F. Li

Keyword(s):

Empirical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

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Rigorous Study of Double Gate Tunneling Field Effect Transistor Structure Based on Silicon

Materials Focus ◽

10.1166/mat.2018.1600 ◽

2018 ◽

Vol 7 (6) ◽

pp. 866-872 ◽

Author(s):

N. Guenifi ◽

S. B. Rahi ◽

T. Ghodbane

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Transistor Structure ◽

Rigorous Study ◽

Effect Transistor ◽

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Numerical simulation on novel nano-scale lateral double-gate tunneling field effect transistor

2010 3rd International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2010.5424618 ◽

2010 ◽

Author(s):

Frank He ◽

Haijun Lou ◽

Wang Zhou ◽

Lin Chen ◽

Yiwen Xu ◽

...

Keyword(s):

Numerical Simulation ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

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Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Applied Physics Letters ◽

10.1063/1.2748366 ◽

2007 ◽

Vol 90 (26) ◽

pp. 263507 ◽

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Ganesh Samudra ◽

Yee-Chia Yeo

Keyword(s):

Film Thickness ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Film ◽

Device Physics ◽

Double Gate ◽

Thickness Optimization ◽

Effect Transistor ◽

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A 2-D semi-analytical model of double-gate tunnel field-effect transistor

Journal of Semiconductors ◽

10.1088/1674-4926/36/5/054002 ◽

2015 ◽

Vol 36 (5) ◽

pp. 054002 ◽

Author(s):

Huifang Xu ◽

Yuehua Dai ◽

Ning Li ◽

Jianbin Xu

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics

Journal of Applied Physics ◽

10.1063/1.4808452 ◽

2013 ◽

Vol 113 (21) ◽

pp. 214506 ◽

Author(s):

Edward Namkyu Cho ◽

Yong Hyeon Shin ◽

Ilgu Yun

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

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Compact Analytical Model of Dual Material Gate Tunneling Field-Effect Transistor Using Interband Tunneling and Channel Transport

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2315294 ◽

2014 ◽

Vol 61 (6) ◽

pp. 1936-1942 ◽

Author(s):

Rajat Vishnoi ◽

M. Jagadesh Kumar

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Channel Transport ◽

Interband Tunneling ◽

Effect Transistor ◽

Gate Tunneling ◽

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Two-dimensional analytical model for hetero-junction double-gate tunnel field-effect transistor with a stacked gate-oxide structure

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.054201 ◽

2017 ◽

Vol 56 (5) ◽

pp. 054201 ◽

Author(s):

Hui Fang Xu ◽

Bang Gui Guan

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Two Dimensional ◽

Oxide Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Subthreshold analytical model for dual-material double gate ferroelectric field effect transistor (DMGFeFET)

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab194d ◽

2019 ◽

Vol 34 (6) ◽

pp. 065008 ◽

Author(s):

Hema Mehta ◽

Harsupreet Kaur

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

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