An Analytical Threshold Voltage Model for PNIN Tunnel Field-Effect Transistor

2015 ◽  
Vol 12 (12) ◽  
pp. 5882-5885
Author(s):  
Li Yu-Chen ◽  
Liu Shu-Lin ◽  
Tong Jun
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Threshold Voltage Model

Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

2015 ◽  
Vol 14 (03) ◽  
pp. 1450025 ◽  
Author(s):  
Yogesh Goswami ◽  
Pranav Asthana ◽  
Shibir Basak ◽  
Bahniman Ghosh
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Threshold Voltage ◽  
Indium Antimonide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Short Channel ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor

2013 ◽  
Vol 22 (3) ◽  
pp. 038501 ◽  
Author(s):  
Yu-Chen Li ◽  
He-Ming Zhang ◽  
Yu-Ming Zhang ◽  
Hui-Yong Hu ◽  
Bin Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon On Insulator ◽  
Two Dimensional ◽  
Effect Transistor ◽  
Threshold Voltage Model
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