scholarly journals Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

2009 ◽  
Vol 48 (6) ◽  
pp. 064503 ◽  
Author(s):  
Sneh Saurabh ◽  
M. Jagadesh Kumar
Keyword(s):  
Theoretical Investigation ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Double Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

2015 ◽  
Vol 14 (03) ◽  
pp. 1450025 ◽  
Author(s):  
Yogesh Goswami ◽  
Pranav Asthana ◽  
Shibir Basak ◽  
Bahniman Ghosh
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Threshold Voltage ◽  
Indium Antimonide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Short Channel ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

Double-gate tunnel field-effect transistor: Gate threshold voltage modeling and extraction

2014 ◽  
Vol 21 (2) ◽  
pp. 587-592 ◽  
Author(s):  
Yu-chen Li ◽  
He-ming Zhang ◽  
Hui-yong Hu ◽  
Yu-ming Zhang ◽  
Bin Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Temperature Sensitivity Analysis of Extended Source Double Gate Tunnel Field Effect Transistor

2021 ◽  
Author(s):  
Dharmender Nishad ◽  
Kaushal Nigam ◽  
Satyendra Kumar
Keyword(s):  
Temperature Sensitivity ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Of Temperature ◽  
Double Gate ◽  
Extended Source ◽  
Temperature Variations ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Abstract Temperature-induced performance variation is one of the main concerns of the conventional stack gate oxide double gate tunnel field-effect transistor (SGO-DG-TFET). In this regard, we investigate the temperature sensitivity of extended source double gate tunnel field-effect transistor (ESDG-TFET). For this, we have analyzed the effect of temperature variations on the transfer characteristics, analog/RF, linearity and distortion figure of merits (FOMs) using technology computer aided design (TCAD) simulations. Further, the temperature sensitivity performance is compared with conventional SGO-DG-TFET. The comparative analysis shows that ESDG-TFET is less sensitive to temperature variations compared to the conventional SGO-DG-TFET. Therefore, this indicates that ESDG-TFET is more reliable for low-power, high-frequency applications at a higher temperature compared to conventional SGO-DG-TFET.

scholarly journals An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 573 ◽  
Author(s):  
Hujun Jia ◽  
Mei Hu ◽  
Shunwei Zhu
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

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