Using Porous Layers to Decrease Quantity of Radiation Defects, Generated During Ion Implantation

2013 ◽  
Vol 3 (1) ◽  
pp. 19-33
Author(s):  
E. L. Pankratov ◽  
E. A. Bulaeva
Keyword(s):  
Ion Implantation ◽  
Radiation Defects ◽  
Porous Layers

On Approach to Increase Integration Rate of Double-Gate Heterotransistors

2017 ◽  
Vol 16 (04) ◽  
pp. 1650039
Author(s):  
E. L. Pankratov ◽  
E. A. Bulaeva
Keyword(s):  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Double Gate ◽  
Radiation Defects ◽  
Variation Of Parameters ◽  
Framework Approach ◽  
Account Variation

In this paper, we introduce an approach to manufacture a field-effect heterotransistor with two gates. In the framework approach, we consider a heterostructure with required configuration, doping of required parts of the heterostructure by diffusion and/or ion implantation and optimization of annealing of dopant or radiation defects. The introduced approach of manufacturing a transistor gives us the possibility to decrease area of surface and thickness of the transistor. In this paper, we also introduce an approach to make prognosis of mass and heat transport with account variation of parameters of these processes in space in time and nonlinearity of these processes.

scholarly journals An approach to model and optimization of manufacturing of an enhanced swing differential Colpitts oscillator. on influence of miss-match induced stress

2020 ◽  
Vol 12 (02) ◽  
pp. 12-32
Author(s):  
E.L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Colpitts Oscillator ◽  
Induced Stress ◽  
Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress

scholarly journals On Model of Manufacturing of an Integrated Circuits Based on Hetero-Structures Under Influence of Mismatch-Induced Stress and Porosity of Materials

2021 ◽  
Vol 23 (1) ◽  
pp. 1-53
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a downconversion mixer circuit. Framework the approach we consider manufacturing the mixer in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed by framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals An analytical approach for prognosis of mass transport during manufacturing of a limiting amplifier circuit. On increasing of integration rate of elements of the amplifier

2019 ◽  
Vol 8 (1) ◽  
pp. 53-61
Author(s):  
Evgeny L. Pankratov
Keyword(s):  
Ion Implantation ◽  
Mass Transport ◽  
Annealing Time ◽  
Analytical Approach ◽  
Radiation Defects ◽  
Amplifier Circuit ◽  
Spatial Coordinate ◽  
Limiting Amplifier

In this paper we introduce an analytical approach for prognosis of mass transport during manufacturing of a limiting amplifier circuit. Based on this approach we obtain conditions to increase density of elements of this circuit, manufactured by diffusion or ion implantation with optimized annealing time of dopant and/or radiation defects. The above analytical approach gives a possibility to take into account nonlinearity of the mass transport, dependences of parameters of the transport on spatial coordinate and time.

The Effect of Photoexcitation on Formation of Radiation Defects in Si

1990 ◽  
Vol 201 ◽  
Author(s):  
V. N. Mordkovich ◽  
A. B. Danilin ◽  
Yu. N. Erokhin ◽  
S. N. Boldyrev
Keyword(s):  
Ion Implantation ◽  
Radiation Damage ◽  
Radiation Defect ◽  
Damage Accumulation ◽  
Defect Formation ◽  
Charge Carriers ◽  
Light Illumination ◽  
Radiation Defects ◽  
Electronic Subsystem ◽  
Nonequilibrium Electron

AbstractPhotoexcitation of the Si electronic subsystem during ion implantation was found to be able to control radiation damage accumulation. Conditions when additional light illumination during ion bombardment suppresses radiation defect formation are determined. The model of effect observed taking into account recombination of nonequilibrium electron and holes is proposed. Coefficient between the change in amount of damage accumulated and the rate of nonequilibrium charge carriers generation is estimated.

Creation of Si quantum dots in a silica matrix due to conversion of radiation defects under pulsed ion-beam exposure

2019 ◽  
Vol 21 (45) ◽  
pp. 25467-25473 ◽  
Author(s):  
A. F. Zatsepin ◽  
Yu. A. Kuznetsova ◽  
C. H. Wong
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Amorphous Silica ◽  
Ion Beam ◽  
Silica Matrix ◽  
Radiation Defects ◽  
Silicon Quantum Dots ◽  
Si Quantum Dots

In this work, we report the mechanism of defects formation and discuss how the pulsed ion implantation actuates the process of silicon-quantum-dots formation in amorphous silica.

scholarly journals On approach to increase integration rate of elements of an four-cascade amplifier circuit

2019 ◽  
Vol 8 (1) ◽  
pp. 27-34
Author(s):  
Evgeny L. Pankratov
Keyword(s):  
Ion Implantation ◽  
Radiation Defects ◽  
Special Configuration ◽  
Amplifier Circuit

In this paper we introduce an approach to increase integration rate of elements of an four-cascade amplifier circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.

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