Large Scale Synthesis of Highly Pure Single Crystalline Tellurium Nanowires by Thermal Evaporation Method

2006 ◽  
Vol 6 (11) ◽  
pp. 3380-3383 ◽  
Author(s):  
Paritosh Mohanty ◽  
Jeunghee Park ◽  
Bongsoo Kim
Keyword(s):  
Large Scale ◽  
Thermal Evaporation ◽  
Inert Atmosphere ◽  
High Yield ◽  
Si Substrate ◽  
Thermal Evaporation Method ◽  
Single Crystalline ◽  
Vaporization Process ◽  
Ar Gas ◽  
Tellurium Nanowires

Single crystalline tellurium nanowires were successfully synthesized in large scale by a facile approach of vaporizing tellurium metal and condensing the vapor in an inert atmosphere onto a Si substrate. Tellurium was evaporated by heating at 300° C at 1 torr and condensed on the Si substrate at 100–150° C, in the downstream of argon (Ar) gas at a flow rate of 25 sccm for 30 min. The as-synthesized nanowires have diameters between 100–300 nm and lengths up to several micrometers. The single crystalline nanowires grew in a preferred [0001] direction. The obtained nanowires were highly pure as only tellurium metal was used in the vaporization process, and no other reagent, surfactant, or template were used for the growth. This low temperature and high-yield approach to the tellurium nanowires synthesis may facilitate its industrial production for various applications.

SYNTHESIS OF In2O3 NANOWIRES ENHANCED BY ANODIC ALUMINA MEMBRANE

2006 ◽  
Vol 05 (04n05) ◽  
pp. 479-485
Author(s):  
C. W. LAI ◽  
X. Y. ZHANG ◽  
H. C. ONG ◽  
J. Y. DAI ◽  
H. L. W. CHAN
Keyword(s):  
Electron Microscopy ◽  
Large Scale ◽  
Anodic Alumina ◽  
X Ray Diffraction ◽  
Alumina Membrane ◽  
Thermal Evaporation Method ◽  
Single Crystalline ◽  
X Ray ◽  
Alumina Membranes ◽  
Transmission Electron

Large-scale single crystalline In 2 O 3 nanowires were successfully synthesized on anodic alumina membranes by a simple thermal evaporation method at 570°C. X-ray diffraction, transmission electron microscopy, and scanning electron microscopy studies revealed the formation of single crystalline In 2 O 3 nanowires with diameters of 50–100 nm and lengths of up to a few hundreds of micrometers. Cathodeluminescence study revealed existence of oxygen vacancies evidenced by a strong and broad emission at 470 nm with a shoulder at 400 nm. The growth mechanism of the nanostructures is also discussed.

Fabrication and Structural and Optical Characterizations of GaN Nano and Micro Structures Grown by Thermal Evaporation Method

2012 ◽  
Vol 545 ◽  
pp. 88-92
Author(s):  
Leila Shekari ◽  
Abu Hassan Haslan ◽  
Hassan Zainuriah
Keyword(s):  
Thermal Evaporation ◽  
Lattice Mismatch ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Ceramic Boat ◽  
Gas Atmosphere ◽  
Ar Gas ◽  
Micro Structures

Abstract. Gallium Nitride (GaN) nano and micro structures were grown on different substrates, such as ceramic boat and alumina plate using thermal evaporation method with commercial GaN powder under the flow of Argon (Ar) gas atmosphere. Micro structural studies by scanning electron microscopy (SEM) revealed the role of different substrates in the nucleation of the GaN nano and micro wires and ribbons. Additional structural and optical characterizations were performed using energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) spectroscopy. Results indicated that the nanowires and nanoribbons are of single-crystal hexagonal GaN and are more and less orderly in their growth with different substrates. The quality of growth of the GaN nanowires and nanoribbons for different substrates is highly dependent on the lattice mismatch between the nanowires and their substrates and it also depends on the conditions of the growth.

DETERMINE THE SIZE AND OXIDIZATION OF SILICON QUANTUM DOTS PREPARED BY THERMAL EVAPORATION METHOD

2003 ◽  
Vol 02 (04n05) ◽  
pp. 357-362
Author(s):  
T. Y. CHIEN ◽  
C. T. CHIA ◽  
T. C. LIN ◽  
S. C. LEE
Keyword(s):  
Quantum Dots ◽  
Raman Spectra ◽  
Thermal Evaporation ◽  
Life Time ◽  
Gas Pressure ◽  
Evaporation Chamber ◽  
Thermal Evaporation Method ◽  
Ar Gas ◽  
Average Size ◽  
Si Quantum Dots

Raman spectrum has been used to analyze the size of Silicon (Si) quantum dots (QDs) prepared by thermal evaporation. Si QDs were grown in thermal evaporation chamber with Ar gas presented. We determined the average size of the Si QDs by analyzing the optical phonon of Si QDs in Raman spectra. We found that the higher the Ar gas pressure in the chamber, the larger the average size of Si QDs grown by thermal evaporation. We found the Si dot size reaches a maximum, about 7.5 nm in diameter, when Ar gas pressure is about 2–3 torr. The oxidization of Si QDs is also observed by Raman spectra. The life time of oxidized process was about 46 days.

Effect of Pd Reactant on One-Dimensional Growth of ZnO on Si Substrate by Thermal Evaporation Method

2011 ◽  
Vol 50 (5) ◽  
pp. 055003 ◽  
Author(s):  
Kyoung-bum Kim ◽  
Young Hun Jeong ◽  
Chang-il Kim ◽  
Young-jin Lee ◽  
Jeong-ho Cho ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Si Substrate ◽  
Thermal Evaporation Method ◽  
One Dimensional ◽  
Evaporation Method ◽  
Dimensional Growth ◽  
Effect Of Pd

Zn-INDUCED DENSITY-CONTROLLED GROWTH OF β-SiC NANOTUBES WITH TUNABLE FIELD EMISSION AND HYDROPHOBIC PROPERTIES

NANO ◽  
2011 ◽  
Vol 06 (05) ◽  
pp. 441-453 ◽  
Author(s):  
G. Z. YANG ◽  
H. CUI ◽  
C. X. WANG
Keyword(s):  
Field Emission ◽  
Growth Mechanism ◽  
Growth Process ◽  
Large Scale ◽  
Thermal Evaporation ◽  
Strong Dependence ◽  
Silicon Wafers ◽  
Controlled Growth ◽  
Hydrophobic Properties ◽  
Single Crystalline

Density-controlled single-crystalline β- SiC nanotubes were successfully synthesized on a large scale by adding Zn into the system via direct thermal evaporation of C 60 onto silicon wafers at 1290°C. Interestingly, no Zn elements can be detected in the final products. However, the addition of Zn power is important because without Zn , density-controlled SiC nanotubes cannot be observed in our experiment. On the basis of the results, a possible growth mechanism was proposed to illustrate the role that Zn played in the growth process. The field emission and hydrophobic performances show strong dependence on the densities of as-synthesized β- SiC nanotubes. The density-controlled β- SiC nanotubes with tunable field emission and hydrophobic properties may have potential in the future of nanotechnology.

Preparation of large-scale cupric oxide nanowires by thermal evaporation method

2004 ◽  
Vol 260 (1-2) ◽  
pp. 130-135 ◽  
Author(s):  
L.S. Huang ◽  
S.G. Yang ◽  
T. Li ◽  
B.X. Gu ◽  
Y.W. Du ◽  
...  
Keyword(s):  
Large Scale ◽  
Thermal Evaporation ◽  
Cupric Oxide ◽  
Thermal Evaporation Method ◽  
Oxide Nanowires ◽  
Evaporation Method

The Laser Ablated Deposition of Si Nanocrystalline

2012 ◽  
Vol 531-532 ◽  
pp. 481-484
Author(s):  
Yue Wu ◽  
Xiao Hong Meng
Keyword(s):  
Ambient Pressure ◽  
Silicon Film ◽  
Nanocrystalline Silicon ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Uniform Size ◽  
Single Crystalline ◽  
Si Nanoparticles ◽  
Ar Gas

The single crystalline Si target with high resistivity was ablated by a XeCl excimer laser (laser fluence 4 J/cm2, repetition rate 1 Hz), and at ambient pressure of 10Pa of pure Ar gas, the nanocrystalline silicon film was deposited on a glass or single crystalline Si substrate located at a distance of 3 cm from the Si target in 30 and 10min, respectively. The Raman and X-ray diffraction spectra of the film deposited on the glass substrate indicate the film is nanocrystalline, which means that it is composed of Si nanoparticles. Scanning electron microscope of the film on the Si substrate shows that the film has the mosaic structure of Si nano-crystallites of uniform size. The photoluminescence peak wavelength is 599nm with full width at half maximum of 56nm.

Hydrogen-Assisted Synthesis and Optical Properties of Single-Crystalline Cd0.9Mn0.1S Nanobelts

2008 ◽  
Vol 8 (8) ◽  
pp. 3883-3888 ◽  
Author(s):  
Guohua Li ◽  
Yang Jiang ◽  
Chun Wang ◽  
Jianfeng Shi ◽  
Zhongping Zhang
Keyword(s):  
Electron Microscopy ◽  
Large Scale ◽  
Hexagonal Wurtzite Structure ◽  
High Quality ◽  
Thermal Evaporation Method ◽  
Single Crystalline ◽  
X Ray ◽  
Transmission Electron ◽  
Room Temperature Photoluminescence Spectrum ◽  
One Step

High quality Cd0.9Mn0.1S nanobelts have been synthesized using a one-step thermal evaporation method in large scale. Their morphology and microstructures were determined by X-ray powder diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman spectroscopy and photoluminescence spectroscopy. The observations revealed that the as-synthesized Cd0.9Mn0.1S nanobelts were high quality single crystalline with hexagonal wurtzite structure. The nanobelts grew along [0 −1 1 0] direction with side surfaces of ± (0 0 0 1) and top surfaces of ± (2 1 1 0). The nanobelts can range in length from several tens to a hundred microns, in thickness about 50 nm and in tapered width 50 to 300 nm. A hydrogen-assisted vapor-liquid-solid (VLS) combined with vapor-solid (VS) formation mechanism is also proposed to interpret the growth of Cd0.9Mn0.1S nanobelts in our work. The room-temperature photoluminescence spectrum of Cd0.9Mn0.1S nanobelts featured two luminescence peaks around 515 and 596 nm, which could be attributed to surface state emission and Mn2+ ion intra-3d (4T1–6A1) transition, respectively.

Optical and Structural Characterizations of GaN Nanostructures

2011 ◽  
Vol 364 ◽  
pp. 348-352 ◽  
Author(s):  
Leila Shekari ◽  
H. Abu Hassan ◽  
Z. Hassan
Keyword(s):  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Coated Substrate ◽  
Gan Nanowires ◽  
Compositional Quality ◽  
Ar Gas ◽  
Structural Characterizations

In this paper, we have grown high-quality wurtzite GaN nanowires (NWs) on polished <111> silicon (Si) either with or without gold (Au) as catalyst, by thermal evaporation using commercial GaN powder in an atmosphere of argon (Ar) gas. Optical and structural characterizations were performed using photoluminescence (PL), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and high resolution X-ray diffraction (HR-XRD). Structural characterizations indicate that the nanowires are of single-crystal hexagonal GaN. By using catalyst the growth location and diameters of the NWs can be controlled. The NWs on the Si are of higher density, and the compositional quality of the grown NWs on the Si substrate is of pure GaN as compare to the Au-coated substrate.

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