Magnetic Field Enhanced Resonant Tunneling in a Silicon Nanowire Single-Electron-Transistor

2012 ◽  
Vol 12 (3) ◽  
pp. 2509-2512 ◽  
Author(s):  
K. Aravind ◽  
M. C. Lin ◽  
I. L. Ho ◽  
C. S. Wu ◽  
Watson Kuo ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Resonant Tunneling ◽  
Silicon Nanowire ◽  
Single Electron ◽  
Single Electron Transistor

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2647-2654 ◽  
Author(s):  
C. STAMPFER ◽  
E. SCHURTENBERGER ◽  
F. MOLITOR ◽  
J. GÜTTINGER ◽  
T. IHN ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electric Fields ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Perpendicular Magnetic Field ◽  
Current Saturation ◽  
Tunnel Barriers ◽  
Graphene Island ◽  
Charging Energy

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.

scholarly journals Singlet–triplet transition in a single-electron transistor at zero magnetic field

2003 ◽  
Vol 67 (11) ◽  
Author(s):  
A. Kogan ◽  
G. Granger ◽  
M. A. Kastner ◽  
D. Goldhaber-Gordon ◽  
Hadas Shtrikman
Keyword(s):  
Magnetic Field ◽  
Single Electron ◽  
Zero Magnetic Field ◽  
Single Electron Transistor ◽  
Triplet Transition

scholarly journals Resonant Tunneling through a Macroscopic Charge State in a Superconducting Single Electron Transistor

1997 ◽  
Vol 78 (25) ◽  
pp. 4821-4824 ◽  
Author(s):  
D. V. Averin ◽  
A. N. Korotkov ◽  
A. J. Manninen ◽  
J. P. Pekola
Keyword(s):  
Charge State ◽  
Resonant Tunneling ◽  
Single Electron ◽  
Single Electron Transistor

scholarly journals Fabrication of double-dot single-electron transistor in silicon nanowire

2010 ◽  
Vol 518 (6) ◽  
pp. S186-S189 ◽  
Author(s):  
Mingyu Jo ◽  
Takuya Kaizawa ◽  
Masashi Arita ◽  
Akira Fujiwara ◽  
Yukinori Ono ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Single Electron ◽  
Single Electron Transistor

Resonant tunneling through a single-electron transistor

1998 ◽  
Vol 41 (2) ◽  
pp. 159-164 ◽  
Author(s):  
J Koenig ◽  
H Schoeller ◽  
G Schon
Keyword(s):  
Resonant Tunneling ◽  
Single Electron ◽  
Single Electron Transistor
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