Effect of Oxidation-Induced Tensile Strain on Gate-All-Around Silicon-Nanowire-Based Single-Electron Transistor Fabricated Using Deep-UV Lithography

Uv Lithography ◽

Deep Uv

Experimental study on silicon nanowire nMOSFET and single-electron transistor at room temperature under uniaxial tensile strain

2008 IEEE Silicon Nanoelectronics Workshop ◽

10.1109/snw.2008.5418461 ◽

2008 ◽

Author(s):

YeonJoo Jeong ◽

Kousuke Miyaji ◽

Toshiro Hiramoto

Keyword(s):

Experimental Study ◽

Tensile Strain ◽

Room Temperature ◽

Silicon Nanowire ◽

Single Electron ◽

Uniaxial Tensile ◽

Effect of Oxidation-induced Tensile Strain on Gate-all-Around Silicon Nanowire Based Single-electron Transistor Fabricated using Optical Lithography

10.7567/ssdm.2010.j-5-5l ◽

2010 ◽

Author(s):

Y. Sun ◽

Rusli ◽

N. Singh

Keyword(s):

Tensile Strain ◽

Silicon Nanowire ◽

Optical Lithography ◽

Single Electron ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Single-electron transistor structures based on silicon-on-insulator silicon nanowire fabrication by scanning probe lithography and wet etching

10.1116/1.1523017 ◽

2002 ◽

Vol 20 (6) ◽

pp. 2824 ◽

Cited By ~ 10

Author(s):

J. T. Sheu ◽

K. S. You ◽

C. H. Wu ◽

K. M. Chang

Keyword(s):

Silicon Nanowire ◽

Wet Etching ◽

Silicon On Insulator ◽

Scanning Probe ◽

Single Electron ◽

Scanning Probe Lithography

Fabrication of double-dot single-electron transistor in silicon nanowire

Thin Solid Films ◽

10.1016/j.tsf.2009.10.085 ◽

2010 ◽

Vol 518 (6) ◽

pp. S186-S189 ◽

Cited By ~ 5

Author(s):

Mingyu Jo ◽

Takuya Kaizawa ◽

Masashi Arita ◽

Akira Fujiwara ◽

Yukinori Ono ◽

...

Keyword(s):

Silicon Nanowire ◽

Single Electron ◽

An n-type silicon nanowire dot based single-electron transistor

2008 IEEE Silicon Nanoelectronics Workshop ◽

10.1109/snw.2008.5418430 ◽

2008 ◽

Author(s):

Shaoyun Huang ◽

Maki Shimizu ◽

Naoki Fukata ◽

Takashi Sekiguchi ◽

Tomohiro Yamaguchi ◽

...

Keyword(s):

Silicon Nanowire ◽

Single Electron ◽

Type Silicon

Magnetic Field Enhanced Resonant Tunneling in a Silicon Nanowire Single-Electron-Transistor

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2012.5797 ◽

2012 ◽

Vol 12 (3) ◽

pp. 2509-2512 ◽

Cited By ~ 1

Author(s):

K. Aravind ◽

M. C. Lin ◽

I. L. Ho ◽

C. S. Wu ◽

Watson Kuo ◽

...

Keyword(s):

Magnetic Field ◽

Resonant Tunneling ◽

Silicon Nanowire ◽

Single Electron ◽

Evidence for activated conduction in a single electron transistor

Journal of Applied Physics ◽

10.1063/1.1322066 ◽

2001 ◽

Vol 89 (1) ◽

pp. 410-419 ◽

Cited By ~ 23

Author(s):

Nicole Y. Morgan ◽

David Abusch-Magder ◽

Marc A. Kastner ◽

Yasuo Takahashi ◽

Hiroyuki Tamura ◽

...

Keyword(s):

Single Electron ◽

Modeling and simulation of single electron transistor with master equation approach

Journal of Physics Conference Series ◽

10.1088/1742-6596/739/1/012048 ◽

2016 ◽

Vol 739 ◽

pp. 012048 ◽

Cited By ~ 8

Author(s):

Frans Willy ◽

Yudi Darma

Keyword(s):

Modeling And Simulation ◽

Master Equation ◽

Single Electron ◽

Equation Approach ◽

Master Equation Approach

Large plasmonic color metasurfaces fabricated by super resolution deep UV lithography

Nanoscale Advances ◽

10.1039/d0na00934b ◽

2021 ◽

Vol 3 (8) ◽

pp. 2236-2244

Author(s):

Matthias Keil ◽

Alexandre Emmanuel Wetzel ◽

Kaiyu Wu ◽

Elena Khomtchenko ◽

Jitka Urbankova ◽

...

Keyword(s):

Super Resolution ◽

Large Area ◽

Uv Lithography ◽

Deep Uv

A novel super resolution deep UV lithography method is employed to fabricate large area plasmonic metasurfaces.

The current analysis of a single electron transistor based on double graphene nanoscroll island

Solid State Communications ◽

10.1016/j.ssc.2021.114234 ◽

2021 ◽

Vol 327 ◽

pp. 114234

Author(s):

Vahideh Khademhosseini ◽

Daryoosh Dideban ◽

Mohammad Taghi Ahmadi

Keyword(s):

Single Electron ◽

Current Analysis