Effects of Al Concentration on Microstructural Characteristics and Electrical Properties of Al-Doped ZnO Thin Films on Si Substrates by Atomic Layer Deposition

2012 ◽  
Vol 12 (7) ◽  
pp. 5598-5603 ◽  
Author(s):  
Ju Ho Lee ◽  
Jae-Won Lee ◽  
Sooyeon Hwang ◽  
Sang Yun Kim ◽  
Hyung Koun Cho ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Microstructural Characteristics ◽  
Si Substrates ◽  
Layer Deposition ◽  
Doped Zno

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Preparation of boron-doped ZnO thin films by photo-atomic layer deposition

2001 ◽  
Vol 65 (1-4) ◽  
pp. 125-132 ◽  
Author(s):  
Y. Yamamoto ◽  
K. Saito ◽  
K. Takahashi ◽  
M. Konagai
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Boron Doped ◽  
Layer Deposition ◽  
Doped Zno

Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

2018 ◽  
Vol 39 (3) ◽  
pp. 033004 ◽  
Author(s):  
Li Chen ◽  
Xinliang Chen ◽  
Zhongxin Zhou ◽  
Sheng Guo ◽  
Ying Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical Characteristics ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Doped Zno

Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition

2012 ◽  
Vol 30 (2) ◽  
pp. 021202 ◽  
Author(s):  
Tara Dhakal ◽  
Daniel Vanhart ◽  
Rachel Christian ◽  
Abhishek Nandur ◽  
Anju Sharma ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Growth Morphology ◽  
Layer Deposition ◽  
Doped Zno

Atomic layer deposition and characterization of Ga-doped ZnO thin films

2007 ◽  
Vol 42 (1-6) ◽  
pp. 172-175 ◽  
Author(s):  
K. Saito ◽  
Y. Hiratsuka ◽  
A. Omata ◽  
H. Makino ◽  
S. Kishimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Doped Zno
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