Effect of Adjacent Bit-Line Cell Interference on Low Frequency Noise in NAND Flash Memory Cell Strings

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7621 ◽

2013 ◽

Vol 13 (9) ◽

pp. 6405-6408 ◽

Author(s):

Bong-Su Jo ◽

Sung-Min Joe ◽

Min-Kyu Jeong ◽

Kyung-Rok Han ◽

Sung-Kye Park ◽

...

Keyword(s):

Flash Memory ◽

Low Frequency ◽

Memory Cell ◽

Frequency Noise ◽

Low Frequency Noise ◽

Nand Flash Memory ◽

Flash Memory Cell

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Impact of P/E cycling on read current fluctuation of NOR Flash memory cell: A microscopic perspective based on low frequency noise analysis

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112748 ◽

2015 ◽

Author(s):

Xiaonan Yang ◽

Jing Liu ◽

Zhiwei Zheng ◽

Yan Wang ◽

Dandan Jiang ◽

...

Keyword(s):

Flash Memory ◽

Noise Analysis ◽

Low Frequency ◽

Memory Cell ◽

Frequency Noise ◽

Low Frequency Noise ◽

Current Fluctuation ◽

Flash Memory Cell ◽

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Characterization of Low Frequency Noise in Floating Gate NAND Flash Memory

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design ◽

10.1109/nvsmw.2008.8 ◽

2008 ◽

Author(s):

Sung-Ho Bae ◽

Jeong-Hyun Lee ◽

Jong-Ho Lee ◽

Hyuck-In Kwon ◽

Seaung-Suk Lee ◽

...

Keyword(s):

Flash Memory ◽

Low Frequency ◽

Floating Gate ◽

Frequency Noise ◽

Low Frequency Noise ◽

Nand Flash Memory

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Analysis of Random Telegraph Noise and low frequency noise properties in 3-d stacked NAND flash memory with tube-type poly-Si channel structure

2012 Symposium on VLSI Technology (VLSIT) ◽

10.1109/vlsit.2012.6242458 ◽

2012 ◽

Author(s):

Min-Kyu Jeong ◽

Sung-Min Joe ◽

Chang-Su Seo ◽

Kyung-Rok Han ◽

Eunseok Choi ◽

...

Keyword(s):

Flash Memory ◽

Low Frequency ◽

Channel Structure ◽

Frequency Noise ◽

Low Frequency Noise ◽

Nand Flash Memory ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

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Simulation of grain-boundary traps effect for 3D vertical gate NAND flash memory cell : From structure geometry to trap description

2014 Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2014.7348607 ◽

2014 ◽

Author(s):

Pei-Yu Wang ◽

Bing-Yue Tsui

Keyword(s):

Grain Boundary ◽

Flash Memory ◽

Memory Cell ◽

Nand Flash Memory ◽

Structure Geometry ◽

Flash Memory Cell ◽

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Highly reliable M1X MLC NAND flash memory cell with novel active air-gap and p+ poly process integration technologies

2013 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2013.6724554 ◽

2013 ◽

Author(s):

Jihyun Seo ◽

Kyoungrok Han ◽

Taeun Youn ◽

Hye-Eun Heo ◽

Sanghyun Jang ◽

...

Keyword(s):

Flash Memory ◽

Process Integration ◽

Memory Cell ◽

Air Gap ◽

Nand Flash Memory ◽

Flash Memory Cell

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Highly Scalable NAND Flash Memory Cell Design Embracing Backside Charge Storage

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2015.15.2.286 ◽

2015 ◽

Vol 15 (2) ◽

pp. 286-291 ◽

Author(s):

Wookhyun Kwon ◽

In Jun Park ◽

Changhwan Shin

Keyword(s):

Flash Memory ◽

Memory Cell ◽

Charge Storage ◽

Cell Design ◽

Nand Flash Memory ◽

Flash Memory Cell

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A middle-1X nm NAND flash memory cell (M1X-NAND) with highly manufacturable integration technologies

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131518 ◽

2011 ◽

Author(s):

Joowon Hwang ◽

Jihyun Seo ◽

Youngbok Lee ◽

Sungkee Park ◽

Jongsoon Leem ◽

...

Keyword(s):

Flash Memory ◽

Memory Cell ◽

Nand Flash Memory ◽

Flash Memory Cell

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The 3-dimensional vertical FG NAND flash memory cell arrays with the novel electrical S/D technique using the Extended Sidewall Control Gate (ESCG)

2010 IEEE International Memory Workshop ◽

10.1109/imw.2010.5488392 ◽

2010 ◽

Author(s):

Moon-Sik Seo ◽

Sung-kye Park ◽

Tetsuo Endoh

Keyword(s):

Flash Memory ◽

Memory Cell ◽

The Novel ◽

Nand Flash Memory ◽

3 Dimensional ◽

Cell Arrays ◽

Flash Memory Cell

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Investigation of 3-D stacked NAND flash memory cell string having 4F2 cell size and shield layer for suppressing cross-talk

Current Applied Physics ◽

10.1016/j.cap.2011.01.019 ◽

2011 ◽

Vol 11 (2) ◽

pp. e2-e5

Author(s):

Min-Kyu Jeong ◽

Ju-Wan Lee ◽

Jong-Ho Lee

Keyword(s):

Cell Size ◽

Flash Memory ◽

Memory Cell ◽

Nand Flash Memory ◽

Flash Memory Cell

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(Invited) Analysis of the Scaling Effect on NAND Flash Memory Cell Operation

ECS Transactions ◽

10.1149/05034.0027ecst ◽

2013 ◽

Vol 50 (34) ◽

pp. 27-35

Author(s):

R. Shirota ◽

H. Watanabe

Keyword(s):

Flash Memory ◽

Memory Cell ◽

Nand Flash Memory ◽

Scaling Effect ◽

Flash Memory Cell

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