Impact of P/E cycling on read current fluctuation of NOR Flash memory cell: A microscopic perspective based on low frequency noise analysis

Author(s):  
Xiaonan Yang ◽  
Jing Liu ◽  
Zhiwei Zheng ◽  
Yan Wang ◽  
Dandan Jiang ◽  
...  
2013 ◽  
Vol 13 (9) ◽  
pp. 6405-6408 ◽  
Author(s):  
Bong-Su Jo ◽  
Sung-Min Joe ◽  
Min-Kyu Jeong ◽  
Kyung-Rok Han ◽  
Sung-Kye Park ◽  
...  

2011 ◽  
Vol 50 (1R) ◽  
pp. 011501 ◽  
Author(s):  
Myoung-Sun Lee ◽  
Jung-Kyu Lee ◽  
Hyun-Sang Hwang ◽  
Hyung-Cheol Shin ◽  
Byung-Gook Park ◽  
...  

2011 ◽  
Vol 324 ◽  
pp. 441-444 ◽  
Author(s):  
Jalal Jomaah ◽  
Majida Fadlallah ◽  
Gerard Ghibaudo

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.


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