An Optimal Control Algorithm with Reduced DC-Bus Current Fluctuation for Multiple Charging Modes of Electric Vehicle Charging Station

This paper presents a systematic structure and a control strategy for the electric vehicle charging station. The system uses a three-phase three-level neutral point clamped (NPC) rectifier to drive multiple three-phase three-level NPC converters to provide electric energy for electric vehicles. This topology can realize the single-phase AC mode, three-phase AC mode, and DC mode by adding some switches to meet different charging requirements. In the case of multiple electric vehicles charging simultaneously, a system optimization control algorithm is adopted to minimize DC-bus current fluctuation by analyzing and reconstructing the DC-bus current in various charging modes. This algorithm uses the genetic algorithm (ga) as the core of computing and reduces the number of change parameter variables within a limited range. The DC-bus current fluctuation is still minimal. The charging station system structure and the proposed system-level optimization control algorithm can improve the DC-side current stability through model calculation and simulation verification.

An Electric-Based Model for Coupling Traps Effect on Random Telegraph Noise

In this work, we present a novel understanding about the anomalous Random Telegraph Noise (aRTN), asserting the existence of coupling effect among multiple traps regarding current amplitude deviation. Based on the examination in the literature of anomalous current fluctuation, we propose a model able to describe the equivalent filament resistance changes due to this process. Notwithstanding, the results obtained with our model fits with experimental current over time observations presented on literature. Given that RTN is still a concern for different technologies, such as MOSFETs, FinFets and ReRAMs, the model can be applied to understanding the dynamics of filament distribution and the trapping de-trapping activity.

Alpha Particle Effect on Multi-Nanosheet Tunneling Field-Effect Transistor at 3-nm Technology Node

The radiation effects on a multi-nanosheet tunneling-based field effect transistor (NS-TFET) were investigated for a 3-nm technology node using a three-dimensional (3D) technology computer-aided design (TCAD) simulator. An alpha particle was injected into a field effect transistor (FET), which resulted in a drain current fluctuation and caused the integrated circuit to malfunction as the result of a soft-error-rate (SER) issue. It was subsequently observed that radiation effects on NS-TFET were completely different from a conventional drift-diffusion (DD)-based FET. Unlike a conventional DD-based FET, when an alpha particle enters the source and channel areas in the current scenario, a larger drain current fluctuation occurs due to a tunneling mechanism between the source and the channel, and this has a significant effect on the drain current. In addition, as the temperature increases, the radiation effect increases as a result of a decrease in silicon bandgap energy and a resultant increase in band-to-band generation. Finally, the radiation effect was analyzed according to the energy of the alpha particle. These results can provide a guideline by which to design a robust integrated circuit for radiation that is totally different from the conventional DD-FET approach.