Preparation of Conductive Carbon Films from Novolac Resins by Ion Beam Irradiation and Carbonization

2018 ◽  
Vol 18 (10) ◽  
pp. 7018-7022
Author(s):  
Da-Sol Kwon ◽  
Hui-Gyun Nam ◽  
Chan-Hee Jung ◽  
Donsik Yang ◽  
Sang-Tae Kim ◽  
...  
Polymer Korea ◽  
2018 ◽  
Vol 42 (6) ◽  
pp. 925-930
Author(s):  
Beom-Seok Choi ◽  
Jang-Yong Lee ◽  
Byoung-Min Lee ◽  
Da-Sol Kwon ◽  
Jae-Hak Choi

1983 ◽  
Vol 25 ◽  
Author(s):  
T. Venkatesan

ABSTRACTRecent results on the effects of high energy ion beam irradiation in polymer films are reviewed in this paper. High energy ions (>10 keV/amu) deposit a large amount of energy (∼several cV/atom) in ionizing the electrons of the target atoms. This results in significant destruction of bonds in the films as a result of which polymers undergo rapid dissociation. Using a quadrupole mass spectrometer the study of transient emission of molecular species produced by an ion pulse has been shown to yield information about the diffusion and reaction kinetics of various molecules in the polymer. The fact that polymers undergo dissociation and those atoms which form volatile species are selectively depleted from the film could be utilized in producing useful inorganic composites by ion bombardment of polymers. For example, hard SiC composite films have been produced by ion beam irradiation of organo-silicon polymers. Eventually, polymer dissociation leads to a predominately carbon containing film which exhibits interesting electronic transport properties. Experiments on ion irradiated, pure carbon films indicate that a metallic form of carbon is produced from the polymer films at high irradiation doses.


1983 ◽  
Vol 27 ◽  
Author(s):  
T. Venkatesan ◽  
R. C. Dynes ◽  
B. Wilkens ◽  
A. E. White ◽  
J. M. Gibson ◽  
...  

ABSTRACTThe electrical properties of pyrolyzed polymers have been studied recently.1,2 It has been shown that organic, polymeric3 and non-polymeric4 films can be made conductive (ρ ~ 10−3Ωcm) by ion beam irradiation. Common to all of the films was the presence of carbon as a constituent element and both pyrolysis and ion beam irradiation3 was shown to increase the relative carbon content of the films. The ion beam irradiated organic films 3,4 exhibited a temperature dependence of their resistivity of the form ρ(T) = ρ∞e−(TЛ)*, where ρ is the ion-induced resistivity, ρ∞ and T0 are constants and T is the temperature. At very high doses of irradiation (1017cm−2Ar+@ 2MeV) the film resistivity was temperature independent. Very similar transport properties were observed in the pyrolyzed polymers1 as well, though the lowest resistivities achieved were higher than the resistivity values observed in the ion irradiated3 polymer films. In both the pyrolysis and ion-irradiation experiments the temperature dependence has been explained by a model due to Sheng and Abeles,5 which involves charge transport by hopping between conducting islands embedded in an insulating matrix. Such striking similarities between two distinctly different modes of energy deposition in the films, prompted us to compare the effects of pyrolysis and ion irradiation in different carbon containing films. We compared both a polymer (HPR-204°) and a film of electron beam evaporated carbon film. While in the former case one would observe chemical degradation as well as structural modification, by studying pure carbon films the physical nature of the processes could be clarified. We report metallic carrier densities in both films and evidence for significant structural rearrangement. We conclude that pyrolysis and ion beam irradiation have similar effects on both polymer and carbon films.


2000 ◽  
Vol 650 ◽  
Author(s):  
P. Patsalas ◽  
S. Logothetidis

ABSTRACTWe present the crystallization effects occurring in sputtered amorphous Carbon (a-C) thin films deposited on Si induced by post-growth low energy (0.5-1.5 keV) Ar+ ion beam irradiation (IBI). The a-C films after IBI have the form of an amorphous matrix with embedded crystalline regions. X-ray diffraction and Electron Microscopy measurements identified the crystalline phases of carbon and SiC. We study in detail the effects of ion energy and fluence on the crystallization process. It was found that low fluence (∼2×1016 ions/cm2) of ions with an optimum ion energy (∼1.5 keV) promoted the diamond formation. X-Ray Reflectivity (XRR) and Spectroscopic Ellipsometry were used to study the amorphous matrix. XRR discriminated the IBI induced surface and bulk effects through the density and the a-C surface roughness, showing surface smoothing to be more prominent for low energy IBI.


2018 ◽  
Vol 44 (1) ◽  
pp. 144
Author(s):  
Tian-Peng LIU ◽  
Kong-Jun DONG ◽  
Xi-Cun DONG ◽  
Ji-Hong HE ◽  
Min-Xuan LIU ◽  
...  

2016 ◽  
Vol 7 (3) ◽  
pp. 172-179 ◽  
Author(s):  
B. A. Gurovich ◽  
K. E. Prikhodko ◽  
M. A. Tarkhov ◽  
A. G. Domantovsky ◽  
D. A. Komarov ◽  
...  

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