Comparative Study on Different Buffer Layer Structures for Epitaxial Growth of IV Strained Materials on Si Substrate

2019 ◽  
Vol 14 (2) ◽  
pp. 211-216
Author(s):  
Ren Yuan ◽  
Jian-Jun Song ◽  
Yang Wen ◽  
Li-Xia Zhao ◽  
He-Ming Zhang ◽  
...  
Keyword(s):  
Comparative Study ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Si Substrate ◽  
Layer Structures ◽  
Strained Materials

Epitaxial Growth of Ti1- xAl xN Buffer Layer for a Ferroelectric (Ba, Sr)TiO3 Capacitor on Si Substrate

1998 ◽  
Vol 37 (Part 2, No. 2A) ◽  
pp. L151-L153 ◽  
Author(s):  
Naoko Yanase ◽  
Kenya Sano ◽  
Kazuhide Abe ◽  
Takashi Kawakubo
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Si Substrate

scholarly journals Epitaxial Growth of Fe3Si Thin Films on Si Substrate with MgO Buffer Layer

2009 ◽  
Vol 34 (1) ◽  
pp. 63-65
Author(s):  
K. Akiyama ◽  
T. Kadowaki ◽  
Y. Hirabayashi ◽  
S. Kaneko
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Si Substrate

Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266 nm YAG Laser

2004 ◽  
Vol 43 (4A) ◽  
pp. 1532-1535 ◽  
Author(s):  
Satoru Kaneko ◽  
Kensuke Akiyama ◽  
Yoshitada Shimizu ◽  
Takeshi Ito ◽  
Shinji Yasaka ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Si Substrate ◽  
Yag Laser

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Epitaxial Growth of La2Zr2O7 Buffer Layer on Textured Ni5W Substrate by the Nitrate Route

2011 ◽  
Vol 26 (5) ◽  
pp. 481-485
Author(s):  
Yan-Ling CHENG ◽  
Hong-Li SUO ◽  
Min LIU ◽  
Lin MA ◽  
Teng ZHANG
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Epitaxial growth of ZnO film on Si(1 1 1) with CeO2(1 1 1) as buffer layer

2012 ◽  
Vol 45 (41) ◽  
pp. 415306 ◽  
Author(s):  
T I Wong ◽  
H R Tan ◽  
D Sentosa ◽  
L M Wong ◽  
S J Wang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Zno Film
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