Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

2015 ◽  
Vol 1 (1) ◽  
pp. 5
Author(s):  
Budi Astuti ◽  
Shaharin Fadzli Abd Rahman ◽  
Masahiro Tanikawa ◽  
Mohamad Rusop Mahmood ◽  
Kanji Yasui ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor ◽  
Diffraction Peak ◽  
Grown Film ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Growth Pressure ◽  
Si Substrates ◽  
Sic Film

Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO<sub>2</sub>/Si substrates was carried out using a home-made hot-mesh chemical vapor deposition (HM-CVD) apparatus. Monomethylsilane (MMS) was used as single source gas while hydrogen (H<sub>2</sub>) as carrier gas. The substrate temperature, tungsten mesh temperature, H<sub>2</sub> flow rate and distance between mesh and substrate were fixed at 750 °C, 1700 °C, 100 sccm and 30 mm, respectively. The growth pressures were set to 1.2, 1.8 and 2.4 Torr. The growth of 3C-SiC (111) on graphene/SiO<sub>2</sub>/Si were confirmed by the observation of θ-2θ diffraction peak at 35.68°. The diffraction peak of thin film on graphene/SiO<sub>2</sub>/Si substrate at pressure growth is 1.8 Torr is relatively more intense and sharper than thin film grown at pressure growth 1.2 and 2.4 Torr, thus indicates that the quality of grown film at 1.8 Torr is better. The sharp and strong peak at 33° was observed on the all film grown, that peak was attributed Si(200) nanocrystal. The reason why Si (200) nanocrystal layer is formed is not understood. In principle, it can’t be denied that the low quality of the grown thin film is influenced by the capability of our home-made apparatus. However, we believe that the quality can be further increased by the improvement of apparatus design. As a conclusion, the growth pressures around 1.8 Torr seems to be the best pressures for the growth of heteroepitaxial 3C-SiC thin film.

Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates

2014 ◽  
Vol 778-780 ◽  
pp. 251-254 ◽  
Author(s):  
Kazuki Meguro ◽  
Tsugutada Narita ◽  
Kaon Noto ◽  
Hideki Nakazawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Sic Films

We have formed a SiC interfacial buffer layer on AlN/Si substrates at a low temperature by low-pressure chemical vapor deposition (LPCVD) using monomethylsilane (CH3SiH3; MMS), and grew 3C-SiC films on the low-temperature buffer layer by LPCVD using MMS. We investigated the surface morphology and crystallinity of the grown SiC films. It was found that the formation of the SiC buffer layer suppressed the outdiffusion of Al and N atoms from the AlN intermediate layer to the SiC films and further improved the surface morphology and crystallinity of the films.

Growth of 3C-SiC Layers on Silicon Substrates with a Novel Stress Relaxation Structure

2001 ◽  
Vol 680 ◽  
Author(s):  
Yoshihiro Irokawa ◽  
Noboru Yamada ◽  
Masahito Kodama ◽  
Tetsu Kachi
Keyword(s):  
Stress Relaxation ◽  
Defect Density ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
Cross Sectional ◽  
Si Substrates ◽  
Micro Raman Spectroscopy ◽  
Pressure Chemical ◽  
Relaxation Structure

ABSTRACTSilicon (Si) substrates having cavities just beneath the surface layer (multi-cavity Si substrates) were examined whether they worked as the stress relaxation structure in 3C-SiC heteroepitaxial growth on Si. Single crystalline 3C-SiC layers were grown on the multi-cavity Si substrates by means of low pressure chemical vapor deposition (LPCVD). The layers' quality was characterized by the cross-sectional TEM observations and the Micro-Raman spectroscopy. The TEM results showed that this structure reduced the defect density in the 3C-SiC layers. The averaged full width at half-maximum (FWHM) of LO Raman mode in the 3C-SiC layerson the multi-cavity Si substrates became narrower than that on the conventional Si substrates. Furthermore, Schottky barrier structures showed that the reverse leakage current of the diodes using the multi-cavity Si substrates is smaller than that using the conventional Si substrates. These results indicate that the multi-cavity Si substrates are effective for stress relaxation in the 3C-SiC layers.

Growth and Properties of GaN/Si Heterojunction

2005 ◽  
Vol 480-481 ◽  
pp. 531-536
Author(s):  
Hassan Zainuriah ◽  
Sha Shiong Ng ◽  
G.L. Chew ◽  
F.K. Yam ◽  
Mat Johar Abdullah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Buffer Layer ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Wide Band ◽  
Hexagonal Wurtzite Structure ◽  
Schottky Barriers ◽  
Full Characterization ◽  
Si Substrates ◽  
Aln Buffer

Gallium nitride (GaN) is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Thin films of GaN are most commonly grown in the hexagonal wurtzite structure on sapphire substrates. Growth of GaN onto silicon substrates offers a very attractive opportunity to incorporate GaN devices onto silicon based integrated circuits. Although direct epitaxial growth of GaN films on Si substrates is a difficult task (mainly due to the 17% lattice mismatch present), substantial progress in the crystal quality can be achieved using a buffer layer. A full characterization of the quality of the material needs to be assessed by a combination of different techniques. In this work, a detailed characterization study of GaN thin film grown on Si(111) with AlN buffer layer by low pressure metalorganic chemical vapor deposition (LP-MOCVD) was carried out. Post deposition analysis includes scanning electron microscopy (SEM), x-ray diffraction (XRD), Hall and infrared (IR) spectroscopy techniques. The IR spectra were compared to the calculated spectra generated with a damped single harmonic oscillator model. Through this method, a complete set of reststrahlen parameters (such as ε∞, S, wTO, γ) of the GaN epilayer were obtained. Our results show that the GaN film has a single crystalline structure. Current-voltage characteristics (I-V) of this GaN/Si heterojunction were measured at room temperature. Rectification behavior was observed for this anisotype heterojunction. The electrical characteristics of Ni Schottky barriers on this unintentionally doped n-type film were also investigated. The barrier height of Ni/GaN Schottky barriers has been determined to be 0.93 eV by I-V measurement.

Influence of the Quality of AlN Buffer Layer on the Quality of GaN Epitaxial Layer on Silicon Substrate

2011 ◽  
Vol 306-307 ◽  
pp. 201-205
Author(s):  
Kang Zhang ◽  
Tai Ping Lu ◽  
Shu Ti Li
Keyword(s):  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Threading Dislocation ◽  
Mean Square ◽  
Si Substrate ◽  
Aln Buffer ◽  
Metalorganic Chemical

The effect of AlN buffer layer on the quality of GaN epilayer grown on Si substrate by metalorganic chemical vapor deposition (MOCVD) has been investigated. It was found that the quality of GaN epilayer strongly related with the crystal quality of AlN buffer layer. As the full width at half maximum (FWHM) of AlN (0 0 2) plane increased from 1.23 degree to 3.41 degree, the FWHM of GaN (0 0 2) plane varied from 432 arcsec to 936 arcsec and the FWHM of GaN (1 0 2) plane varied from 677 arcsec to 1226 arcsec. Besides, more cracks formed and threading dislocation (TD) density increased. The deteriorated AlN buffer layer also led to a rougher morphology of the GaN layer, as can be seen from the root mean square (RMS) roughness of GaN layer which varied from 0.178 nm to 0.476 nm. And the morphology of AlN and the quality of GaN epilayer are not appear to be relevant due to the ruleless values of RMS roughness of AlN.

Low pressure chemical vapor deposition (LPCVD) of β–SiC on Si(100) using MTS in a hot wall reactor

1993 ◽  
Vol 8 (10) ◽  
pp. 2617-2626 ◽  
Author(s):  
Chien C. Chiu ◽  
Seshu B. Desu ◽  
Ching Yi Tsai
Keyword(s):  
Chemical Vapor ◽  
Preferred Orientation ◽  
Si Substrate ◽  
Hydrogen Atoms ◽  
Deposition Pressure ◽  
Deposition Mechanism ◽  
Excess Carbon ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Silicon Excess

Stoichiometric β–SiC thin films with a high preferred orientation of (111) planes were successfully deposited on Si(100) substrates at a relatively low temperature of 1050 °C from the mixture of methyltrichlorosilane (CH3SiCl3 or MTS) and H2 in a hot wall LPCVD reactor. No etching of the Si substrate and smooth topography of the deposit were observed at high H2/MTS ratios and/or low deposition pressures. The presences of excess silicon, excess carbon, or incorporated hydrogen atoms in the films were not detected. Poor topography, degradation in preferred orientation, and etching of the Si substrate were observed at high values of deposition pressure, MTS concentration, and temperature. The etching on the Si substrate was due to the out-diffusion of Si atoms from the substrate and the presence of Cl-containing radicals resulting from the decomposition of MTS molecules while transporting to the Si substrates. A deposition mechanism was proposed to model the deposition of SiC in a hot wall reactor by using (1) gas phase decomposition of MTS molecules, (2) adsorption of the intermediates on the surface, and (3) reaction of the adsorbed intermediates to form SiC. The deposition rates were predicted very well for various deposition conditions in a hot wall LPCVD reactor.

scholarly journals New Technique for Sublimation Growth of AlN Single Crystals

2001 ◽  
Vol 6 ◽  
Author(s):  
Y. Shi ◽  
B. Liu ◽  
Lianghong Liu ◽  
J.H. Edgar ◽  
E.A. Payzant ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Crack Density ◽  
Chemical Vapor ◽  
Alloy Film ◽  
Buffer Layers ◽  
New Technique ◽  
Organic Chemical ◽  
Aln Film ◽  
Aln Buffer ◽  
Sublimation Growth

Single crystalline platelets of aluminum nitride (AlN) were successfully grown by a new technique. It consists of (1) depositing an AlN buffer layer on a SiC substrate by metal organic chemical vapor deposition (MOCVD) below 1100°C, (2) forming an (AlN)x(SiC)1−x alloy film on the AlN film by condensing vapors sublimated at a temperature of 1800°C from a source mixture of AlN-SiC powders, followed by (3) condensing vapors sublimated from a pure AlN source (at 1800°C). The necessity of the first two steps for the successful AlN sublimation growth on SiC substrate was illustrated by the initial nucleation studies of alloys on SiC substrates with and without MOCVD AlN buffer layers: an AlN MOCVD buffer layer leads to continuous, single grain growth mode; The (AlN)x(SiC)1−x alloy film reduces the crack density because its thermal expansion coefficient is intermediate between SiC and AlN. X-ray diffraction (XRD) and Raman spectroscopy studies indicated the high quality of the AlN single crystal.

Raman Characteristics of Poly 3C-SiC Thin Films Deposited on AlN Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 505-508 ◽  
Author(s):  
Gwiy Sang Chung ◽  
Jun Ho Jeong
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Biaxial Stress ◽  
Before And After ◽  
Pressure Chemical ◽  
Carrier Gases ◽  
Aln Buffer ◽  
Sic Films

This paper presents the Raman scattering characteristics of poly 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + H2). The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which means that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at 1180 °C on AlN of after annealing.

Diffusivity of Si in the 3C-SiC Buffer Layer on Si(100) by X-ray Photoelectron Spectroscopy

2010 ◽  
Vol 1246 ◽  
Author(s):  
Wei-Yu Chen ◽  
Jian-You Lin ◽  
Jenn-Chang Hwang ◽  
Chih-Fang Huang
Keyword(s):  
Buffer Layer ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Step Method ◽  
X Ray ◽  
Pressure Chemical ◽  
Bonding Characteristics ◽  
Sic Film

AbstractA void free 3C-SiC film grown on Si(100) can be achieved by low pressure chemical vapor deposition using the modified four-step method. The diffusion step plays an important role to enhance the quality of the 3C-SiC buffer layer on Si(100). X-ray photoelectron spectroscopy was used to characterize the bonding characteristics of the 3C-SiC buffer layer of about 10 nm thick. The Si-C bonds are partially formed on the as-carburized Si(100) before the diffusion step. The ratio of C-C to Si-C bonds on the as-carburized Si(100) is about 7:3, which can be lowered to about 1:9 after the diffusion step at 1350 oC for 5 min or at 1300 oC for 7 min. According to XPS data and Fick's second law, the diffusivity of Si across the 3C-SiC interlayer are determined to be 2.2×10-16 cm2/s and 3.13×10-16 cm2/s at 1300°C and 1350°C, respectively. The derived activation energy is 1.6 eV for the diffusion of Si atoms in the 3C-SiC buffer layer.

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