New device structures for graphene nanoribbon field effect transistors

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

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Suspended Graphene Nanoribbon Ion-Sensitive Field-Effect Transistors Formed by Shrink Lithography for pH/Cancer Biomarker Sensing

Journal of Microelectromechanical Systems ◽

10.1109/jmems.2013.2254701 ◽

2013 ◽

Vol 22 (5) ◽

pp. 1140-1146 ◽

Cited By ~ 10

Author(s):

Bo Zhang ◽

Tianhong Cui

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Cancer Biomarker ◽

Graphene Nanoribbon ◽

Suspended Graphene

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Low Temperature Device Processing Technology for II-VI Semiconductors

MRS Proceedings ◽

10.1557/proc-161-323 ◽

1989 ◽

Vol 161 ◽

Cited By ~ 1

Author(s):

D.L. Dreifus ◽

R.M. Kolbas ◽

B.P. Sneed ◽

J.F. Schetzina

Keyword(s):

Low Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Epitaxial Layers ◽

Processing Technologies ◽

Device Processing ◽

Device Structures ◽

Lift Off ◽

Processing Steps

ABSTRACTLow temperature (<60° C) processing technologies that avoid potentially damaging processing steps have been developed for devices fabricated from II-VI semiconductor epitaxial layers grown by photoassisted molecular beam epitaxy (MBE). These low temperature technologies include: 1) photolithography (1 µm geometries), 2) calibrated etchants (rates as low as 30 Å/s), 3) a metallization lift-off process employing a photoresist profiler, 4) an interlevel metal dielectric, and 5) an insulator technology for metal-insulator-semiconductor (MIS) structures. A number of first demonstration devices including field-effect transistors and p-n junctions have been fabricated from II-VI epitaxial layers grown by photoassisted MBE and processed using the technology described here. In this paper, two advanced device structures, processed at <60° C, will be presented: 1) CdTe:As-CdTe:In p-n junction detectors, grown in situ by photoassisted MBE, and 2) HgCdTe-HgTe-CdZnTe quantum-well modulation-doped field-effect transistors (MODFETs).

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