The Effect of Auditory Processing on the Development of Low Level Low Frequency Noise Criteria

1982 ◽  
Vol 1 (3) ◽  
pp. 97-108 ◽  
Author(s):  
S. Benton ◽  
H.G. Leventhall
Keyword(s):  
Auditory System ◽  
Auditory Processing ◽  
Low Frequency ◽  
Frequency Noise ◽  
Assessment Practices ◽  
Low Frequency Noise ◽  
Low Level ◽  
Noise Assessment ◽  
The Individual ◽  
External Stimuli

The role played by loudness in the assessment of annoyance is seen to effect an intensity dominated concept current in noise assessment practices. Such dominance is not supported by the complex processing nature of the auditory system. The individual is placed within a context which requires the auditory system to align the person to external stimuli whilst maintaining the production of appropriate behaviours. Development of the concepts associated with audition is a pre-requisite to establishing viable noise assessment criteria. The limitations of present day criteria, with an accepted assumption of intensity as the key parameter, are accentuated when assessments are made of low level low frequency noise. Once the individual is viewed as an active processor, bodily parameters may also serve to provide indices which are derived from the amount of ‘processor work’.

scholarly journals Low-Frequency Noise Assessment of Work Function Engineering Cap Layers in High-k Gate Stacks

2019 ◽  
Vol 8 (2) ◽  
pp. N25-N31 ◽  
Author(s):  
C. Claeys ◽  
R. Ritzenthaler ◽  
T. Schram ◽  
H. Arimura ◽  
N. Horiguchi ◽  
...  
Keyword(s):  
Work Function ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gate Stacks ◽  
High K ◽  
Noise Assessment

The Role of ‘Background Stressors’ in the Formation of Annoyance and Stress Responses

1994 ◽  
Vol 13 (3) ◽  
pp. 95-101 ◽  
Author(s):  
S. Benton ◽  
H.G. Leventhall
Keyword(s):  
Coping Strategies ◽  
Stress Responses ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Coping Response ◽  
Chronic Effect ◽  
Low Level

Background stresses have a chronic effect on our lives and stimulate the development of coping strategies. The paper considers low level low frequency noise (LLLFN) as a background stressor and the coping response to it of either improving sensitivity as an aid to location or reducing sensitivity in an attempt to habituate. It is considered that LLLFN is a proven background stressor which is not evaluated correctly by conventional noise measures.

Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications

2016 ◽  
Vol 5 (6) ◽  
pp. N27-N31 ◽  
Author(s):  
E. Simoen ◽  
R. Ritzenthaler ◽  
M.-J. Cho ◽  
T. Schram ◽  
N. Horiguchi ◽  
...  
Keyword(s):  
Low Frequency ◽  
Trap Density ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Input Output ◽  
Noise Assessment ◽  
Oxide Trap

Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates

2020 ◽  
Vol 67 (11) ◽  
pp. 4802-4807
Author(s):  
Alberto Oliveira ◽  
Anabela Veloso ◽  
Cor Claeys ◽  
Naoto Horiguchi ◽  
Eddy Simoen
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Gates ◽  
Noise Assessment

Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs

2014 ◽  
Vol 29 (11) ◽  
pp. 115015 ◽  
Author(s):  
E Simoen ◽  
A Federico ◽  
M Aoulaiche ◽  
R Ritzenthaler ◽  
T Schram ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Assessment

Low Frequency Noise in 4H-SiC Lateral JFET Structures

2012 ◽  
Vol 717-720 ◽  
pp. 473-476 ◽  
Author(s):  
Hua Khee Chan ◽  
Rupert C. Stevens ◽  
Jonathan P. Goss ◽  
Nicholas G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Cross Section ◽  
Low Frequency ◽  
Frequency Noise ◽  
Small Signal ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Low Level ◽  
Power Spectral ◽  
Bulk Substrate ◽  
High Temperature Operation

Low frequency noise on 4H-SiC low-level signal-lateral JFETs was systematically investigated. In contrast to previous studies, which are based upon high power vertical structures, this work investigates the low-frequency noise behaviour of low-level signal-lateral devices which are more relevant to the realisation of small signal amplifiers.The JFETs studied share an identical cross section, with different gate lengths and widths. For high temperature operation between 300K and 700K at VGS = 0V, the Normalised Power Spectral Density (NPSD) of the JFETs is proportional to ƒ-1. The NPSD increases monotonically with temperature until a critical temperature, where it starts to decline. Two unique noise origins, fluctuation from bulk and SiO2-SiC interface traps were observed across all the devices investigated. Low frequency noise for devices with a 50μm gate width is localised at the SiO2-SiC interface, whereas for wider devices the noise is seen to be of bulk/substrate origin, which follows Hooge’s model.

Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part II: Measurements and results

2017 ◽  
Vol 128 ◽  
pp. 109-114 ◽  
Author(s):  
D. Boudier ◽  
B. Cretu ◽  
E. Simoen ◽  
R. Carin ◽  
A. Veloso ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Assessment
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