Low Frequency Noise in 4H-SiC Lateral JFET Structures

2012 ◽  
Vol 717-720 ◽  
pp. 473-476 ◽  
Author(s):  
Hua Khee Chan ◽  
Rupert C. Stevens ◽  
Jonathan P. Goss ◽  
Nicholas G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Cross Section ◽  
Low Frequency ◽  
Frequency Noise ◽  
Small Signal ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Low Level ◽  
Power Spectral ◽  
Bulk Substrate ◽  
High Temperature Operation

Low frequency noise on 4H-SiC low-level signal-lateral JFETs was systematically investigated. In contrast to previous studies, which are based upon high power vertical structures, this work investigates the low-frequency noise behaviour of low-level signal-lateral devices which are more relevant to the realisation of small signal amplifiers.The JFETs studied share an identical cross section, with different gate lengths and widths. For high temperature operation between 300K and 700K at VGS = 0V, the Normalised Power Spectral Density (NPSD) of the JFETs is proportional to ƒ-1. The NPSD increases monotonically with temperature until a critical temperature, where it starts to decline. Two unique noise origins, fluctuation from bulk and SiO2-SiC interface traps were observed across all the devices investigated. Low frequency noise for devices with a 50μm gate width is localised at the SiO2-SiC interface, whereas for wider devices the noise is seen to be of bulk/substrate origin, which follows Hooge’s model.

The Role of ‘Background Stressors’ in the Formation of Annoyance and Stress Responses

1994 ◽  
Vol 13 (3) ◽  
pp. 95-101 ◽  
Author(s):  
S. Benton ◽  
H.G. Leventhall
Keyword(s):  
Coping Strategies ◽  
Stress Responses ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Coping Response ◽  
Chronic Effect ◽  
Low Level

Background stresses have a chronic effect on our lives and stimulate the development of coping strategies. The paper considers low level low frequency noise (LLLFN) as a background stressor and the coping response to it of either improving sensitivity as an aid to location or reducing sensitivity in an attempt to habituate. It is considered that LLLFN is a proven background stressor which is not evaluated correctly by conventional noise measures.

Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs

2013 ◽  
Vol 34 (1) ◽  
pp. 117-119 ◽  
Author(s):  
Cher Xuan Zhang ◽  
En Xia Zhang ◽  
Daniel M. Fleetwood ◽  
Ronald D. Schrimpf ◽  
Sarit Dhar ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise

Modeling the interface traps-related low frequency noise in triple-gate SOI junctionless nanowire transistors

2019 ◽  
Vol 215 ◽  
pp. 111005 ◽  
Author(s):  
Renan Trevisoli ◽  
Rodrigo Trevisoli Doria ◽  
Sylvain Barraud ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Nanowire Transistors

The Effect of Auditory Processing on the Development of Low Level Low Frequency Noise Criteria

1982 ◽  
Vol 1 (3) ◽  
pp. 97-108 ◽  
Author(s):  
S. Benton ◽  
H.G. Leventhall
Keyword(s):  
Auditory System ◽  
Auditory Processing ◽  
Low Frequency ◽  
Frequency Noise ◽  
Assessment Practices ◽  
Low Frequency Noise ◽  
Low Level ◽  
Noise Assessment ◽  
The Individual ◽  
External Stimuli

The role played by loudness in the assessment of annoyance is seen to effect an intensity dominated concept current in noise assessment practices. Such dominance is not supported by the complex processing nature of the auditory system. The individual is placed within a context which requires the auditory system to align the person to external stimuli whilst maintaining the production of appropriate behaviours. Development of the concepts associated with audition is a pre-requisite to establishing viable noise assessment criteria. The limitations of present day criteria, with an accepted assumption of intensity as the key parameter, are accentuated when assessments are made of low level low frequency noise. Once the individual is viewed as an active processor, bodily parameters may also serve to provide indices which are derived from the amount of ‘processor work’.

Research on Morphology of N80 Casing Drilling Steel Fatigue Crack Growth with Low-Frequency Noise

2011 ◽  
Vol 239-242 ◽  
pp. 2795-2798
Author(s):  
Dang Hui Wang ◽  
Tian Han Xu ◽  
Ting Zhen Yao
Keyword(s):  
Fatigue Crack ◽  
Fatigue Crack Growth ◽  
Crack Growth ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Power Spectral ◽  
Microstructure Morphology ◽  
Casing Drilling

Microstructure and low-frequency noise test were measured for N80 steel casing drilling, through SEM analyzed their morphology. Results showed that: (1) power spectral density of 1/f noise increases two orders of magnitude after fatigue crack growth. (2) 1/f noise parameters of γ and B are significantly increased, indicating that the process of fatigue produced more cracks, defects, and combination centers, which were proved by microstructure morphology. From the mechanism of fatigue crack growth of N80, defects and cracks resulting from fatigue are the numbers of kind of fluctuations. In essence, low-frequency noise is a type of fluctuations, which can serve as a viable tool to study the defects and the characterization of defects.

Minority Carrier Lifetime Measurement Based on Low Frequency Fluctuation

2009 ◽  
Vol 1195 ◽  
Author(s):  
Lin Ke ◽  
Sha Huang ◽  
Soo Jin Chua ◽  
Szu Cheng Lai ◽  
Bin Dolmanan Surani
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Low Cost ◽  
Low Frequency ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurement ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Current Dependence ◽  
Power Spectral

AbstractWe present a novel, simple, and accurate approach based on low frequency voltage fluctuations to determine the averaged carrier lifetime in semiconductor materials and devices. This technique serves to address the limitations faced by existing techniques that use light as the excitation source for lifetime measurement. In this paper, the minority carrier lifetime is inferred from the 1/f low frequency noise profile exhibited by the device during low current operation. The current dependence of the power spectral density and its relation to minority carrier lifetime is modeled and derived directly giving a current dependent carrier lifetime. This technique is solely based on the electrical noise and no light source is required for excitation. The low frequency noise can be easily acquired without significant distortion via a signal analyzer as long as there is a sufficiently good Ohmic contact between the probe and the device under test, and that the device is sufficiently shielded from the influence of EMI. This technique has lower crosstalk, fewer fitting parameters, is low cost and allows the lifetime to be extracted directly from data collected at lower frequencies. These characteristics make our method useful in encapsulated devices, applicable on wafers and devices in

scholarly journals Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

Micromachines ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 5 ◽  
Author(s):  
Yasuhisa Omura
Keyword(s):  
Low Voltage ◽  
Low Frequency ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Soi Mosfet ◽  
Buried Channel ◽  
Inversion Channel ◽  
Bias Range

This paper theoretically revisits the low-frequency noise behavior of the inversion-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) and the buried-channel SOI MOSFET because the quality of both Si/SiO2 interfaces (top and bottom) should modulate the low-frequency fluctuation characteristics of both devices. It also addresses the low-frequency noise behavior of sub-100-nm channel SOI MOSFETs. We deepen the discussion of the low-frequency noise behavior in the subthreshold bias range in order to elucidate the device’s potential for future low-voltage and low-power applications. As expected, analyses suggest that the weak inversion channel near the top surface of the SOI MOSFET is strongly influenced by interface traps near the top surface of the SOI layer because the traps are not well shielded by low-density surface inversion carriers in the subthreshold bias range. Unexpectedly, we find that the buried channel is primarily influenced by interface traps near the top surface of the SOI layer, not by traps near the bottom surface of the SOI layer. This is not due to the simplified capacitance coupling effect. These interesting characteristics of current fluctuation spectral intensity are explained well by the theoretical models proposed here.

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 428-431 ◽  
Author(s):  
Lucy Claire Martin ◽  
Hua Khee Chan ◽  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.

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