Effects of sample orientation on pyrolysis and piloted ignition of wood

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

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The Effect of Environmental Pressure on the Mechanisms Controlling the Piloted Ignition of Combustible Materials

40th International Conference on Environmental Systems ◽

10.2514/6.2010-6261 ◽

2010 ◽

Author(s):

Sonia Fereres-Rapoport ◽

Chris Lautenberger ◽

Carlos Fernandez-Pello ◽

Gary Ruff ◽

David Urban

Keyword(s):

Environmental Pressure ◽

Piloted Ignition ◽

Combustible Materials

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EFFECT OF SAMPLE ORIENTATION ON STATIC RECRYSTALLIZATION OF AZ31 MAGNESIUM ALLOY

ACTA METALLURGICA SINICA ◽

10.3724/sp.j.1037.2012.00159 ◽

2012 ◽

Vol 48 (8) ◽

pp. 915 ◽

Cited By ~ 1

Author(s):

Hongtao HUANG ◽

Andrew Godfrey ◽

Wei LIU ◽

Ruihe TANG ◽

Qing LIU

Keyword(s):

Magnesium Alloy ◽

Static Recrystallization ◽

Az31 Magnesium Alloy ◽

Sample Orientation

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High-resolution characterization of the forbidden Si 200 and Si 222 reflections

Journal of Applied Crystallography ◽

10.1107/s1600576715004732 ◽

2015 ◽

Vol 48 (2) ◽

pp. 528-532 ◽

Cited By ~ 77

Author(s):

Peter Zaumseil

Keyword(s):

High Resolution ◽

Angular Range ◽

Angular Divergence ◽

X Ray Diffraction ◽

Multiple Diffraction ◽

Diffraction Plane ◽

X Ray ◽

Sample Orientation ◽

Plane Sample

The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range.

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