Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
Huan-Yu Shih
◽
Fu-Chuan Chu
◽
Atanu Das
◽
Chia-Yu Lee
◽
Ming-Jang Chen
◽
...
2019 ◽
Vol 126
(3)
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pp. 034102
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T. Partida-Manzanera
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Z. H. Zaidi
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J. W. Roberts
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S. B. Dolmanan
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K. B. Lee
◽
...
2013 ◽
Vol 103
(14)
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pp. 142109
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G. Ye
◽
H. Wang
◽
S. Arulkumaran
◽
G. I. Ng
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R. Hofstetter
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...
Yu-Shyan Lin
◽
Chi-Che Lu
2017 ◽
Vol 33
(1)
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pp. 015007
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Seonno Yoon
◽
Seungmin Lee
◽
Hyun-Seop Kim
◽
Ho-Young Cha
◽
Hi-Deok Lee
◽
...
2007 ◽
Vol 91
(21)
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pp. 212101
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H. C. Lin
◽
T. Yang
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H. Sharifi
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S. K. Kim
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Y. Xuan
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...
2018 ◽
Vol 124
(16)
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pp. 165704
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Jaya Jha
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Bhanu B. Upadhyay
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Kuldeep Takhar
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Navneet Bhardwaj
◽
Swaroop Ganguly
◽
...
D. K. Panda
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G. Amarnath
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T. R. Lenka
2020 ◽
Vol 67
(5)
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pp. 1939-1945
◽
Ching-Ting Lee
◽
Jia-Chen Guo
2013 ◽
Vol 52
(8S)
◽
pp. 08JN08
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Milan Ťapajna
◽
Ján Kuzmík