scholarly journals Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Won-Young Choi ◽  
Hyun-Woo Bang ◽  
Seung-Hyun Chun ◽  
Sunghun Lee ◽  
Myung-Hwa Jung

AbstractTopologically protected chiral skyrmions are an intriguing spin texture that has attracted much attention because of fundamental research and future spintronic applications. MnSi with a non-centrosymmetric structure is a well-known material hosting a skyrmion phase. To date, the preparation of MnSi crystals has been investigated by using special instruments with an ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on a sapphire substrate using a relatively low vacuum environment of conventional magnetron sputtering. Although the as-grown MnSi films have a polycrystalline nature, a stable skyrmion phase in a broad range of temperatures and magnetic fields is observed via magnetotransport properties including phenomenological scaling analysis of the Hall resistivity contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phases but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.

2020 ◽  
Author(s):  
Won-Young Choi ◽  
Hyun-Woo Bang ◽  
Seung-Hyun Chun ◽  
Sunghun Lee ◽  
Myung-Hwa Jung

Abstract Topologically protected chiral skyrmion is an intriguing spin texture, which has attracted much attention because of fundamental research and future spintronic applications. MnSi with the non-centrosymmetric structure is well-known material hosting skyrmion phase. To date, preparation of MnSi crystals has been investigated by using special instruments with ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on sapphire substrate using a relatively low vacuum environment of conventional magnetron sputtering. Although as-grown MnSi films have polycrystalline nature, the stable skyrmion phase in a broad range of temperatures and magnetic fields is observed by magnetotransport properties including phenomenological scaling analysis of Hall resistivities contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phase, but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.


Author(s):  
Keisuke Nishimoto ◽  
Kohei Shima ◽  
Shigefusa F. Chichibu ◽  
Mutsumi Sugiyama

Abstract Epitaxial growths of NiO thin films were realized on (0001) sapphire and (100) MgO substrates by using a reactive RF magnetron sputtering method. The NiO epilayers grown on a (0001) sapphire exhibited the (111)-oriented double-domain structure, which comprised of a triangular and its inverted triangular grains. Meanwhile, the NiO epilayers on a (100) MgO exhibited the (100)-oriented single-domain structure, which comprised of quadrangular grains. The observed grain structures most likely reflect the growth planes of respective NiO epilayers, and, mixed crystals of NiO and MgO were present near the interface. Therefore, A (100) MgO substrate is suitable for obtaining a single-domain NiO epilayer, whereas a (0001) sapphire substrate is suitable for obtaining a NiO epilayer without interdiffusion between NiO and sapphire. These NiO epilayers will be expected for applying the physical properties evaluation using photoluminescence or Hall measurements, and the fabrication of electrical or optical devices.


Optik ◽  
2014 ◽  
Vol 125 (18) ◽  
pp. 5167-5170 ◽  
Author(s):  
W.L. Guan ◽  
J. Lian ◽  
Y.X. Yu ◽  
Z.Z. Sun ◽  
M.L. Zhao ◽  
...  

Author(s):  
J.A. Eades ◽  
E. Grünbaum

In the last decade and a half, thin film research, particularly research into problems associated with epitaxy, has developed from a simple empirical process of determining the conditions for epitaxy into a complex analytical and experimental study of the nucleation and growth process on the one hand and a technology of very great importance on the other. During this period the thin films group of the University of Chile has studied the epitaxy of metals on metal and insulating substrates. The development of the group, one of the first research groups in physics to be established in the country, has parallelled the increasing complexity of the field.The elaborate techniques and equipment now needed for research into thin films may be illustrated by considering the plant and facilities of this group as characteristic of a good system for the controlled deposition and study of thin films.


Author(s):  
OLIMPIA SALAS ◽  
Jianliang Lin ◽  
LIZBETH MELO-MAXIMO ◽  
Abril Erendira Murillo Sanchez ◽  
DULCE VIRIDIANA MELO MAXIMO ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document